| Project/Area Number |
05452099
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Institute of Space and Astronautical Science |
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Principal Investigator |
TAJIMA Micho Institute of Space and Astronautical Science Space Application, Professer, 衛星応用工学研究系, 教授 (30216965)
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| Co-Investigator(Kenkyū-buntansha) |
WARASHINA Masatoshi Institute of Space and Astronautical Science Space Application, Research Associa, 衛星応用工学研究系, 助手 (50013727)
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| Project Period (FY) |
1993 – 1994
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| Project Status |
Completed (Fiscal Year 1994)
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| Budget Amount *help |
¥5,000,000 (Direct Cost: ¥5,000,000)
Fiscal Year 1994: ¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 1993: ¥2,500,000 (Direct Cost: ¥2,500,000)
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| Keywords | Photoluminescence / Silicon / Crystal Characterization / Light Element Impurity / Heavy Metal Impurity / Thermal Donor / Oxygen Aggromeration |
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| Research Abstract |
The behaviors of heavy-metal and light-element inpurities in silicon have been investigated by photoluminescence spectroscopy and mapping.
An intentional doping with heavy-metal impurity of copper was performed for various float-zone (FZ) Si wafers ; nitrogen-doped wafers, dislocated wafers, and wafers with swirl defects. A new photoluminescence (PL) band was observed for the first time in the samples with a characteristic distribution. The new PL band was suggested to be ascribed to copper in the dissolved state (not in the complex state).
Oxygen is the most important light-element impurities in Czochralski (CZ) -grown Si. The oxygen aggregation process at 450ﾟC has been investigated by comparing the ditributions of the interstitial oxygen, the thermal donor (TD) and the defect responsible for the PL line at 0.767 eV in a rapidly cooled CZ Si crystal in which point defects are frozen-in nonuniformly in the growth direction. We successfully analyzed the formation and annihilation process of the initial stage of oxygen precipitates : The oxygen aggregation is retarded by excess vacancies.
The present research enables us to understand accurate behaviors of light-element and heavy-metal impurities. This contributes greatly to the defect control which is indispensable for advanced device fabrication.
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