| Project/Area Number |
05452111
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | SHIZUOKA UNIVERSITY |
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Principal Investigator |
FUJIYASU Hiroshi SHIZUOKA UNIV., FAC.ENG.PROF., 工学部, 教授 (60022232)
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| Co-Investigator(Kenkyū-buntansha) |
HIKIDA Kyouko SHIZUOKA UNIV., FAC.ENG.ASSISTANT PROF., 工学部, 助手 (00252164)
ISHIDA Akihiro SHIZUOKA UNIV., FAC.ENG.ASSOCIATE PROF., 工学部, 助教授 (70183738)
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| Project Period (FY) |
1993 – 1994
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| Project Status |
Completed (Fiscal Year 1994)
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| Budget Amount *help |
¥6,100,000 (Direct Cost: ¥6,100,000)
Fiscal Year 1994: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1993: ¥4,000,000 (Direct Cost: ¥4,000,000)
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| Keywords | SEMICONDUCTOR FILM / II-VI COMPOUND FILM / ELECTROLUMINESCENCE / II-VI COMPOUND SUPERLATTICE / EL DEVICE / Semiconductor laser / Hetero epitaxy |
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| Research Abstract |
Obuective of this work is to develop the photo active materials for electroluminescent (EL) device with double insulating layrs and for bluelaser by using hot wall epitaxy (HWE) systems. The systems have the load-lock chambers and researched materials are II-VI compound semiconductors. The following results are obtained.
1. EL devices : Various kinds of CdZnSSe (Mn) -ZnS strained layr superlattice active layrs were made and EL emitting light wave lengths could be changed from 580 nm to 700 nm through changing the magnitude of induced strain due to the large lattice mismatch between the two layrs consisting the superlattice. The strain changes the crystal field which Mn ion sees and the d electronic states are changed under the changing of symmetry or Mn-anion bond length, and this was found to cause the change of wave length of the emitting light ; i.e.the red shifts. The most bright one was CdTe-ZnS superlattice layr and the illuminance was 1000 cd/m^2 and it was the highest one as far
… More
as reported until now. For blue light emitting devece we have prepared the active layr of thick (100 nm) ZnS-SrS (Ce doped) multiple layrs with the thin (1nm) ZnS-SrS multiple layr at the each interface of the thick layrs. The boue-green light of 300 cd/m^2 of 700 nm wave length was observed and very sharp voltage threshold characteristics were observed in the luminance-voltage characteristics. The luminance was stable and the life was found to be long.
2. Blue light lasers : Cl and N doping was carried out to the ZnTe, ZnSe, ZnTe-ZnSe and ZnSe-ZnS superlattices by using HWE and the results are (1) electron carrier density and mobility are 6x! 0^<18> cm^<-3> and 30 cm^2/V sec for ZnSe (Cl doped) -ZnS superlattice, respectvely and (2) hole density and mobility are 2x10^<16> cm^<-3> and 0.4 cm^2/V sec for ZnSe (N doped) -ZnS superlattice respectively. (2) blue light DCEL emission was observed from ZnSe p-n LED at room temperature.
In this research All of the HWE system were connected through substrate transfer chamber and hereafter blue laser of multiple layrs such as p or n impurity doped films and /or superlattices layrs and the electrodes can be made without exposing the surface of each layr to air and the contamination of the interface will be much improved. Less
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