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Resonance of Electronic States and Optical Non-linearity in Coupled Quantum Well Structures

Research Project

Project/Area Number 05452112
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied optics/Quantum optical engineering
Research InstitutionNAGOYA UNIVERSITY

Principal Investigator

SAWAKI Nobuhiko  Nagoya Univ., School of Engg., Prof., 工学部, 教授 (70023330)

Co-Investigator(Kenkyū-buntansha) 後藤 英雄  中部大学, 工学部, 助教授 (00195942)
Project Period (FY) 1993 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥6,600,000 (Direct Cost: ¥6,600,000)
Fiscal Year 1995: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1994: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1993: ¥3,300,000 (Direct Cost: ¥3,300,000)
KeywordsCoupled Quantum Well / Resonance of Electronic States / Optical Nonlinearity / Wave Mixing / Photoluminescence / Optical Absorption / Exiton / Modulator / デルタドープ構造 / ホトルミネッセンス
Research Abstract

The purpose of the research is to clarify the optical nonlinearity in a strongly coupled triple quantum well structure, where the application of an external field changes the situation of resonance of the electronic states. Thus the exciton oscillator strength should be a strong function of the external field. Since the electrons and holes have different tunneling escape times, after the excitation of carriers in a well by a femtosecond laser pulse, electrons will escape to the other well faster than holes, resulting the build up of internal field across the wells. This induced field could affect the change of the oscillator strength of excitons. Since the induced field will increase by increasing the input optical power, we can expect strong optical nonlinearity which will be responsible in the femtosecond region.
A GaAs/AlGaAs triple quantum well structure was made by MBE on a semiinsulating GaAs. The optical spectra was investigated using femtosecond laser pulse. The transmission of the laser light through the sample was investigated at various wave lengths. The transmittance was found to be a strong function of the input intensity. Above a critical power, the transmittance is decreased as the increase of the input power. The nonlinear behavior is enhanced near the anti-crossing energy associated with the triple resonance, which is in good agreement with the theoretical prediction.

Report

(4 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • 1993 Annual Research Report
  • Research Products

    (27 results)

All Other

All Publications (27 results)

  • [Publications] S. Niwa: "Picosecond photoluminescence study of relaxation phenomena of hot-electrons in a quasi-one-dimensional structures" Jpn. J. Appl. Phys.34. 4515-4518 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M. Taya: "Tunneling escape time in quasi-zero-dimensional quantum wells" Extnd. Abstract 2nd Intern. Workchop on Quantum Functional Devices, Matsue. 64-65 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N. Sawaki: "Reduction of energy relaxation rate of photo-excited hot electrons in quasi-one and zero-dimensional structures" Proc. Intern. Conf. Hot Carriers in Semiconductors, Chicago. (印刷中). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H. Ahn: "Optical Non-linersity in an Asymmetric Triple Quantm Well Structure" Extnd. Abstract Intern. Workshop on Femtosecond Technology, Tsukuba. 100- (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N. Anzai: "Tunneling Escape Time in Coupled Quantum Well Structures" 14th Electronic Materials Symposioum, Izu-Nagaoka,. F14- (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N. Sawaki: "Resonance of Electronic States and Indirect Excitons in an Asymmetric Quantum Well Structures" Physica B. (印刷中). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] S.Niwa, T.Suzuki, N.Sawaki: "Picosecond photoluminescence study of relaxation phenomena of hot-electrons in a quasi-one-dimensional structures" Jpn.J.Appl.Phys.34 No.8. 4515-4518 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Taya, T.Suzuki, N.Sawaki, and K.Hara: "Tunneling escape time in quasi-zero-dimensional quantum wells" Extnd.Abst.2nd Intern.Workshop on Quantum Functional Devices, Matsue. 64-65 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N.Sawaki, S.Niwa, M.Taya, T.Murakami, and T.Suzuki: "Reduction of energy relaxation rate of photo-excited hot electrons in quasi-one and zero-dimensional structures" Proc.Intern.Conf.Hot Carriers in Semiconductors, Choicago. (in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Ahn, M.Yamaguchi, T.Kidokoro, N.Sawaki, T.Suzuki, and K.Hara: "Optical Non-linersity in an Asymmetric Triple Quantm Well Structure" Extnd.Abstract Intern.Workshop Femtosecond Tech.Tsukuba. 100. (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N.Anzai, N.Sawaki, A.Tackeuchi, and S.Muto: "Tunneling Escape Time in Coupled Quantum Well Structures" 14th Electronic Materials Symposium, Izu-Nagaoka. F-14. (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Yamaguchi, K.Masukawa, N.Ikedo, N.Sawaki, K.Fujii, and H.Goto: "Tunneling and Interference of Electronic States in Double Qantum Well Structures" Physica B. in press. (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N.Sawaki, T.Kidokoro, S.Ohsaki, T.Suzuki, and K.Hara: "Resonance of Electronic States and Indirect Excitons in an Asymmetric Quantum Well Structures" Physica B. in press. (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] S.Niwa: "Picosecond photoluminescence study of relaxation phenomena of hot-electrons in a quasi-one-dimensional structures" Jpn.J.Appl.Phys.34. 4515-4518 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] M.Taya: "Tunneling escape time in quasi-zero-dimensional quantum wells" Extnd.Abstract 2nd Intern.Workshop on Quantum Functional Devices,Matsue. 64-65 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] N.Sawaki: "Reduction of energy relaxation rate of photo-excited hot electrons in quasi-one and zero-dimensional structures" Proc.Intern.Conf.Hot Carriers in Semiconductors,Chicago,. (印刷中). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] H.Ahn: "Optical Non-Iinersity in an Asymmetric Triple Quantm Well Structure" Extud.Abstract Intern.Workshop on Femtosecond Technology,Tsukuba. 100- (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] M.Yamaguchi: "Tunneling and Interference of Electronic States in Double Qantum Well Structures" Physica B. (印刷中). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] N.Sawaki: "Resonance of Electronic States and Indirect Excitons in an Asymmetric Quantum Well Structures" Physica B. (印刷中). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] T.Sugiura: "Raman scattering study of TO phonon modes in InGaAsP/GaAs" Semicond.Sci.& Technol.9. 1800-1804 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] T.Suzuki: "The C-V profile of heavily silicon δ-doped GaAs grown by MBE" Control of Semiconductor Interfaces,. 489-494 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] T.Suzuki: "Autocompensation in Si plalar doped GaAs" Appl.Suf.Science. 82/83. 103-108 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] H.Goto: "Negative magnetoresisitance in a Si-atomic layer doped GaAs" Proc.Intern.Symp.on GaAs and Related Compound. (印刷中). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] S.Fukuta: "Modulation of optical spectra in an asymmetric triple quantum well structures" Semicond.Sci.& Technol.8. 1881-1884 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] T.Sugiura: "Raman scattering of InGaAsP lattice-matched to GaAs in the region of immisibility," Jpn.J.Appl.Phys.32. 2718-2721 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] N.Sawaki: "Electron mobility in quasi-one dimensional structures" Semicond.Sci.& Technol.9(印刷中). (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] T.Suzuki: "The C-V profile of heavily silicon δ-doped GaAs grown by MBE" Proc.Intern.Symp.on Control of Semiconductor Interfaces,Karuizawa. 1994. (印刷中). (1994)

    • Related Report
      1993 Annual Research Report

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Published: 1993-04-01   Modified: 2016-04-21  

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