| Project/Area Number |
05452289
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| Research Category |
Grant-in-Aid for General Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Material processing/treatments
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| Research Institution | The University of Tokyo |
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Principal Investigator |
SUGA Tadatomo Reserch Center for Advanced Science and Technology, The University of Tokyo, Professor, 先端科学技術研究センター, 教授 (40175401)
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| Co-Investigator(Kenkyū-buntansha) |
SASAKI Gen Reserch Center for Advanced Science and Technology, The University of Tokyo, Lec, 先端科学技術研究センター, 講師 (30192595)
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| Project Period (FY) |
1993 – 1994
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| Project Status |
Completed (Fiscal Year 1994)
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| Budget Amount *help |
¥4,100,000 (Direct Cost: ¥4,100,000)
Fiscal Year 1994: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1993: ¥2,300,000 (Direct Cost: ¥2,300,000)
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| Keywords | Piezo-electric materials / Low temperature bonding / Room temperature bonding / Anodic bonding / Silicon / Ion bomberdment / Radical beam / Surface activation bonding / 吸着層 |
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| Research Abstract |
The result of the study for low tempertaute bonding of piezo-electric materials are surmarized as follows
1) In order to investigate the application of the room temperature bonding by means of surface activation method, the bonding for aluminum and silicon was examined. Surface activation process were carried out for Ar-atom beam bomberdment and hydrogen radical beam. For surface activation of hydrogen radical beam for silicon, carbon on silicon was cleaned up, but oxygen remanded. On the other hand, for Ar-atom beam bomberdment, carbon and oxygen on silicon were cleaned up complately. The bonded sample of silicon to aluminum have good bonding strength for Ar-atom beam bomberdment, but week for hydrogen radical beam.
2) Bonding for piezo-electric materials and silicon will be performed by the two wafers. In order to investigate the possibility of wafer bonding by surface activation method, silicon to silicon bonding were examined. Ar-atom beam bomberdment was carried out for surface activation method. Aluminum coated silicon wafer was carried out for bonding. For increasing the bonded area, long bonding time and heavy load are needed.
3) Anodic bonding are carried out for silicon wafer and PZT ceramics coated by Pyrex glass. Good condition for bonding is above 450ﾟC in temperature and 500V in voltage. Bonded interface has no void and no stress atomistically in observation ousing transmission electron microscopy. Migration of Na ion by applied voltage were observed.
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