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Epitaxial Growth of Diamond on Chemically Modified Surface of Foreign Substrates

Research Project

Project/Area Number 05453104
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 反応・分離工学
Research InstitutionKYUSHU UNIVERSITY

Principal Investigator

MOROOKA Shigeharu  Kyushu University, Dept.of Chemical Science and Technology, Professor, 工学部, 教授 (60011079)

Co-Investigator(Kenkyū-buntansha) MAEDA Hideaki  Kyushu University, Dept.of Chemical Science and Technology, Research Associate, 工学部, 助手 (60238871)
KUSAKABE Katsuki  Kyushu University, Dept.of Chemical Science and Technology, Associate Professor, 工学部, 助教授 (30153274)
Project Period (FY) 1993 – 1994
Project Status Completed (Fiscal Year 1994)
Budget Amount *help
¥5,900,000 (Direct Cost: ¥5,900,000)
Fiscal Year 1994: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1993: ¥4,400,000 (Direct Cost: ¥4,400,000)
KeywordsDiamond / Heteroepitaxy / Thin film / Microwave plasma / Nucleation / Crystal growth / Single crystal film / Silicon / 半導体 / 配向性 / エピタキシャル / 窒化ホウ素 / 単結晶 / ホウ素化合物 / エピタキシー
Research Abstract

The formation of large-area single-crystal films is a goal of CVD diamond research because of their great potential in microelectronic device technology. In the present study, microwave plasma chemical vapor deposition (MPCVD) was adopted and highlyorientated diamond film was formed by treating the substrate surface by various methods.
First, the effect of scratching with fine powders such as diamond, c-BN,alumina and metal borides on diamond deposition was systematically examined. The population density of diamond particles formed on the scratched Si (100) face was greatly increased, but a polycrystalline film was formed in all cases. Heteroepitaxial nucleation and growth of an orientated diamond film were confirmed on the (100) and (111) planes of c-BN single crystal. However, the formation of c-BN single-crystal film was not realized yet.
On the other hand, a highly orientated diamond film was grown on the (100) Si substrate by a bias-enhanced MPCVD.The Si surface carburized under optimum conditions showed a "Mesh Structure" on the nanometer scale. The formation of this structure was essential for the nucleation of (100) orientated diamond particles. The growth of randomly orientated diamond particles was then suppressed by changing the reaction condition to that favorable for the (111) growth. At the final stage, CO_2 was mixed in the reactant system and a highly (100) orientated flat diamond film was obtained.

Report

(3 results)
  • 1994 Annual Research Report   Final Research Report Summary
  • 1993 Annual Research Report
  • Research Products

    (25 results)

All Other

All Publications (25 results)

  • [Publications] H.Maeda: "Effect of Substrate Pretreatment of Diammond Deposition in a Microwave Plasma" J.Mat.Sci. 28. 129-137 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Effect of Substrate Pretreatment on Diammond Deposition" Diamond and Related Materials. 2. 758-761 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Heteroepitaxial Growth of Diamond on C-BN in a Microwave Plasma" Diamond and Related Materials. 3. 398-402 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Diamond Growth from Mixture of Fluorocarbon and Hydrogen in a Microwave Plasma" Diamond and Related Materials. 3. 1072-1078 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 前田英明: "配向性ダイヤモンド薄膜の製造と応用(その1)" 化学工業. 46. 912-913 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 前田英明: "ダイヤモンド薄膜の新展開" 化学と工業. 52. 1588-1589 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Nucleation of Diamond by Chemical Vapor Deposition in Bias-Enhanced Microwave Plasma" Advences in New Diamond Sci and Tech. 153-156 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 前田英明: "配向性ダイヤモンド薄膜の製造と応用(その2)" 化学工業. 47. 73-78 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Effect of Substrate Pretreatment of Diamond Deposition in a Microwave" Plasma, J.Materials Sci.28. 129-137 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Effect on Substrate Pretreatment of Diamond Deposition" Diamond and Related Materials. 2. 758-761 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Heteroepitaxial Growth of Diamond on c-BN in a Microwave Plasma" Diamond and Related Materials. 3. 398-402 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Diamond Growth from Mixture of Fluorocarbon and Hydrogen ina Microwave Plasma" Diamond and Related Materials. 3. 1072-1078 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Synthesis and Application of Epitaxial Diamond (1)" Kagaku Kogyou. 46. 912-913 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Development of Diamond Thin Film" Kagaku to Kogyou. 52. 1588-1589 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Nucleation of Diamond by Chemical Vapor Deposition in Bias-Enhanced Microwave Plasma" Advances in New Diamond Sci.and Technol.153-156 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Synthesis and Application of Epitaxial Diamond (2)" Kagaku Kogyou. 47. 73-78 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] H.Maeda: "Ettect of Substrate Pretreatment of Diamond Deposition-a Microwave Plasms" J.Mat.Sci.28. 129-137 (1993)

    • Related Report
      1994 Annual Research Report
  • [Publications] H.Maeda: "Effect of Substrate Pretreatment on Diamond Deposition" Diamond and Related Materials. 2. 758-761 (1993)

    • Related Report
      1994 Annual Research Report
  • [Publications] H.Maeda: "Heteroepitaxial Grouth of Diamond anc-βN in a Microuwave Plasma" Diamond and Related Materials. 3. 398-402 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] H.Maeda: "Diamond Growth from Mixture of Fluorocarbon ad Hydregen in a Microwave Plasma" Diamond and Related Materials. 3. 1072-1078 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 前田 英明: "配向性ダイヤモンド薄膜の製造と応用(その1)" 化学工業. 52. 912-913 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 前田 英明: "ダイヤモンド薄膜の新展開" 化学と工業. 47. 1588-1589 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] H.Maeda: "Nucleation of Dianond by chenical Vapor Deposition in Bics-Enhaced Microwaue Plasma" Advances in New Diamond Saiad Tech. 153-156 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 前田 英明: "配向性ダイヤモンド薄膜の製造と応用(その2)" 化学工業. 46. 73-78 (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] Hideaki Maeda: "Heteroepitaxial Growth of Diawond on c-BN in a Microwave Plasma" Diawond and Related Materials. (in Press). (1994)

    • Related Report
      1993 Annual Research Report

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Published: 1993-04-01   Modified: 2016-04-21  

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