| Project/Area Number |
05554006
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
固体物性Ⅰ(光物性・半導体・誘電体)
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| Research Institution | Faculty of Engineering Utsunomiya University |
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Principal Investigator |
NAKAI Shunichi Faculty of Engineering Utsunomiya University, Professor, 工学部, 教授 (70081429)
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| Co-Investigator(Kenkyū-buntansha) |
KASHIWAKURA Takayuki Faculty of Engineering Utsunomiya University, Asistant, 工学部, 助手 (90261817)
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| Project Period (FY) |
1993 – 1994
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| Project Status |
Completed (Fiscal Year 1994)
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| Budget Amount *help |
¥16,000,000 (Direct Cost: ¥16,000,000)
Fiscal Year 1994: ¥5,000,000 (Direct Cost: ¥5,000,000)
Fiscal Year 1993: ¥11,000,000 (Direct Cost: ¥11,000,000)
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| Keywords | Soft X-Ray Specctrometer / Soft X-Ray Raman Scattering / Soft X-Ray Resonant Auger |
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| Research Abstract |
1.Performance evaluation of the curved crystal spectrometer for soft X-Ray Raman scattering spectroscopy.
(1) Performance test for precision and reliability of a scanning mechanism and resolution of the spectrometer. An electron beam was used as an excitation source. RAP(2d=26.12A)and ADP(2d=10.64A)crystals were used as an analyzing crystal.
(2) Preparation of a program control for the speetrometer, data measuring and processing systems.
Systems were controled by a personal computer (PC-9800).
Measurement of the soft X-Ray Raman scattering spectra.
We have measured Si-K_<alpha> Resonant X-Ray Emission Spectra (RXES) and Si-KLL Resonant Auger Spectra (RAS) in the vicinity of Si-K absorption edge for Si, SiO_2 and also Y-LMM RAS in Y-Lm absorption edge for Y metal, YF_3 and YCI_3. RXES were measureed at undulator beam line BL-2A of photon Factory. It is observed that the intensity of the spectra increases resonantly at the absorption peak energy and the peak energy exhibits linear dispersion as a function of incident photon energy. Moreover, these line shapes are asymmetry. Therefore these phenomena are owing to X-Ray resonant Raman scattering.
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