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Development of Ohmic contact materials for ZnSe-based blue light emitting devices

Research Project

Project/Area Number 05555003
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionKYOTO UNIVERSITY

Principal Investigator

MURAKAMI Masanori  Kyoto Univ., Graduate School of Engineering, Professor, 工学研究科, 教授 (70229970)

Co-Investigator(Kenkyū-buntansha) SUZUKI Akira  Sharp Corporation Manager, 部長
SAKURAI Takeshi  Sharp Corporation Vice Director, 副所長
OTUKI Akira  Kyoto Univ., Graduate School of Engineering, Research Associate, 工学研究科, 助手 (10026148)
OKU Takeo  Kyoto Univ., Graduate School of Engineering, Research Associate, 工学研究科, 助手 (30221849)
KOIDE Yasuo  Kyoto Univ., Graduate School of Engineering, Associate Professor, 工学研究科, 助教授 (70195650)
Project Period (FY) 1993 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥8,100,000 (Direct Cost: ¥8,100,000)
Fiscal Year 1995: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1994: ¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 1993: ¥4,000,000 (Direct Cost: ¥4,000,000)
Keywordsp-ZnSe / Ohmic contact / Schottky barrier height / deposition / annealing / Cd-based contact / metal interface / ZnSe / オーミック・コンタクト / 金属 / 半導体界面 / CdZnSe / アニール / 自然酸化膜 / 仕事関数 / Au,Nb,Cu,Ag,Ni / Cd基およびTe基 / 窒素ラジカルドーピング / 分子線エピタキシー / Au / トンネル電流
Research Abstract

In order to explore a possibility to prepare low resistance Ohmic contacts by the conventional deposition and annealing (DA) technique, the effects of the ZnSe surface cleaning and formation of an intermediate heterostructure on the electrical properties at the metal/semiconductor interface have been investigated for the N-doped p-ZnSe substrates grown by the molecular beam epitaxy (MBE) technique. The turn-on voltage (V_T) (corresponding to the breakdown voltage) was significantly reduced by cleaning the ZnSe surface in saturated bromine water (SBW) solution, which was found to be due to removal of the native oxide layr grown on the ZnSe surface. An addition of a small amount of Cd to the W contact reduced the V_T values of the W contacts from about 11 to 6 V.The microstructural analysis indicated the formation of the Cd_XZn_<1-x>Se layrs at the metal/ZnSe interface with Cd composition (x) larger than 0.9. From the present experiment, it was concluded that formation of the thin large-area Cd_xZn_<1-x>Se layrs is crucial to reduce the V_T value to nearly zero by the conventional DA technique.

Report

(4 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • 1993 Annual Research Report
  • Research Products

    (15 results)

All Other

All Publications (15 results)

  • [Publications] 小出 康夫: "金属/ZnSe界面とオーミック・コンタクト" 日本金属学会誌「まてりあ」. 33. 738-743 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 村上 正紀: "化合物半導体用コンタクト材料のメゾスコピック化" 日本金属学会誌「まてりあ」. 34. 987-991 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H. Ishikawa: "Surface cleaning effects on electrical properties of Ni contacting to p-type ZnSe" J. Vac. Sci. & Technol. B. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] O. Tadanaga: "Dependences of etectrical properties on work functions of metals contacting to p-type ZnSe" Jpn. J. Appl. Phys.(in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K. Hashimoto: "Cd and Te based Ohmic contact materials to p-type ZnSe" J. Electron. Materials. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Y. Koide: "Cd-based Ohmic contact meterials to p-type ZnSe" J. Crystal Growth. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M. Murakami: "Ohmic contact materials for compound semiconductors" Proceedings of Electrochemical Society Meeting. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H. Ishikawa: "Surface cleaning effects on electrical properties of Ni contacting to p-type ZnSe" J. Vac. Sci. & Technol B. (in press). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 小出 康夫: "金属/半導体および半導体/半導体接合界面におけるエネルギー障壁" 日本金属学会誌「まてりあ」. 35. 印刷中 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Y.Koide: "Ohmic contact and metal/ZnSe interfaces" J.Jpn Institute of Metals. vol.33. 738-743 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Murakami: "Mezo-scale Ohmic contact materials for compound semiconductors" J.Jpn Institute of Metals. vol.34. 987-991 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Ishikawa, K.Tsuki, Y.Koide, N.Teraguchi, Y.Tomomura, A.Suzuki, and M.Murakami: "Surface cleaning effects on electrical properties of Ni contacting to p-type ZnSe" J.Vac.Sci.& Technol.B (in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] O.Tadanaga, Y.Koide, K.Hashimoto, T.Oku, N.Teraguchi, Y.Tomomura, A.Suzuki, and M.Murakami: "Dependences of electrical properties on work functions of metals contacting to p-type ZnSe" Jpn.J.Appl.Phys.(in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Hashimoto, Y.Koide, O.Tadanaga, T.Oku, N.Teraguchi, Y.Tomomura, A.Suzuki, and M.Murakami: "Cd and Te based Ohmic contact materials to p-type ZnSe" J.Electron.Materials. (in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Y.Koide, K.Hashimoto, O.Tadanaga, T.Oku, N.Teraguchi, Y.Tomomura, A.Suzuki, and M.Murakami: "Cd-based Ohmic contact materials to p-type ZnSe" J.Crystal Growth. (in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary

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Published: 1993-04-01   Modified: 2016-04-21  

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