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Trail Manufacturing of Microscopic Infrared Polariscope

Research Project

Project/Area Number 05555004
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionKyoto Institute of Technology

Principal Investigator

YAMADA Masasoshi  Kyoto Institute of Technology, Faculy of Engineering and Design, Professor, 工芸学部, 教授 (70029320)

Co-Investigator(Kenkyū-buntansha) TATSUMI Masami  Sumitomo Electric Industies, LTD., Itami Laboratories, Senior Researcher, 伊丹研究所, 主任研究員
Project Period (FY) 1993 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥7,300,000 (Direct Cost: ¥7,300,000)
Fiscal Year 1995: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1994: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1993: ¥5,500,000 (Direct Cost: ¥5,500,000)
KeywordsPhotoelasticity / Infrared Polariscope / Residual Strain / Compond Semiconductor / Microscopic Measurement
Research Abstract

In order to characterize two-dimensional profiles of residual strains in III-V compound semiconductors by means of photoelactic method, we have developed two kind of microscopic infrared polariscope. One is the scanning type polariscope with high sensitivity and good precision, in which the measurement is made point by point. The other is the multi-channel type polariscope with short measuring time, in which many points are measured simultaneously with an array detecter.
Scanning type polariscope After several trial manufacturing of the rotating polarizer which is the most important part of the scanning type polariscope, we have succeeded in manufacturing the scanning type polariscope with practicality on measuring time and precision. The spatial resolution is attained to several ten mum by using a infrared semiconductor laser. Varieties of III-V compound semiconductor wafers (LEC-GaAs, LEC-InP,VCZ-GaAs, VCZ-InP,HB-GaAs) were examed so that the scanning type polariscope was found to be very useful in checking the crystal growth conditions.
Multi-channel type polariscope A multi-channel type polariscope for visible light has been successfully developed with a data-processing system which is capable of processing a large amount of image data coming from the array detector. The polariscope developed showed fine performances on spatial resolution and mesearing time. A new technique was introduced for increasing the dynamic range of measurement.

Report

(4 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • 1993 Annual Research Report
  • Research Products

    (32 results)

All Other

All Publications (32 results)

  • [Publications] M. Yamada: "Quantitative photoelastic characterization of residual strains in LEC-grown indium phosphide (100) wafers" Proc. of 5th Int. Conf. on InP and Related Materials,Paris France,IEEE Cat. ♯93CH3276-3. 69-72 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Y. Yabuhara: "Development of low-dislocation -density semi-insulating long 2-inch InP single crystals by the VCZ method" Proc.of 5th Int.Conf.on InP and Related Materials,Paris France,IEEE Cat. ♯93CH3276-3. 309-312 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M. Yamada: "High-sensitivity computer-controlled infrared polariscpe" Rev. Sci. Instrm.64. 1815-1821 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M. Yamada: "Study of residual strains in horizontal-Bridgman-grown gallium arsenide wafers by a high-sensitivity computer-controlled infrared polariscope" J. Appl. Phys.74. 2436-2439 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M. Yamada: "Anormalous increase of residual starins accompanied with slip generation by thermal annealing of LEC-grown GaAs wafers" PRoc. of 20th Int. Symp. on GaAs and Relataed Compounds,Freiburg Germany,IOP No. 136. 505-510 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M. Yamada: "Microscopic and macroscopic characterization of residual starins in LEC-grown III-V compound wafers" Proc. of 5th Int. Conf. on Defect Recognition and Image Processing in Semiconductors and Devices,Santander Spain,IOP No. 135. 315-318 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M. Yamada: "Relief of residual strains in gallium phosphide (100) wafers by cracking" J. Appl. Phys.74. 6435-6436 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M. Tatsumi: "Characterization of semi-insulating III-V materials grown by vapor pressure controlled Chochralski method" Proc. of 8th conf. on semi-insulating III-V materials,Warsaw Poland,World Scientific Publishing. 11-18 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M. Yamada: "Scanning infrared polariscope as routine tool for quantitative characterization of residual strains" Proc. of 8th conf. on semi-insulating III-V materials,Warsaw Poland,World Scientific Publishing. 95-98 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M. Fukuzawa: "High-spatial-resolution characterization of residual strain in commercial LEC-grown InP (100) wafres" Proc. 7th Int. Conf. on Indium Phosphide and Related Materials,Sapporo Japan,IEEE Cat. ♯95CH35720. 674-677 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M. Yamada: "Photoelastic characterization of slip lines generated by thermal processing with ring holder" Proc. of 22th Int. Symp. on Compound Semiconductors,Cheju Korea. (in press). (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Yamada: "Quantitative photoelastic characterization of residual strains in LEC-grown indium phosphide (100) wafers" Proc.of 5th Int.Conf.on InP and Related Materials, Paris France, IEEE Cat.#93CH3276-3. 69-72 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Y.Yabuhara, S.Kawarabayashi, T.Toyoda, M.Yokogawa, K.Fujita, and M.Yamada: "Development of low-dislocation-density semi-insulating long 2-inch InP single crystals by the VCZ method" Proc.of 5th Int.Conf.on InP and Related Materials, Paris France, IEEE Cat.#93CH3276-3. 309-312 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Yamada: "High-sensitivity computer-controlled infrared polariscope" Rev.Sci.Instrm.64. 1815-1821 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Yamada: "Study of residual strains in horizontal-Bridgman-grown gallium arsenide wafers by a high-sensitivity computer-controlled infrared polariscope" J.Appl.Phys.74. 2436-2439 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Yamada, T.Shibuya, and M.Fukuzawa: "Anormalous increase of residual strains accompanied with slip generation by thermal annealing of LEC-grown GaAs wafers" Proc.of 20th Int.Symp.on GaAs and Relatead Compounds, Freiburg Germany, IOP. No.136. 505-510 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Yamada: "Microscopic and macroscopic characterization of residual starins in LEC-grown III-V compound wafers" Proc.of 5th Int.Conf.on Defect Recognition and Image Processing in Semiconductors and Devices, Santander Spain, IOP. No.135. 315-318 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Yamada: "Relief of residual strains in gallium phosphide (100) wafers by cracking" J.Appl.Phys.74. 6435-6436 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tatsumi, T.Kawase, Y.Iguchi, K.Fujita, and M.Yamada: "Characterization of semi-insulating III-V materials grown by vapor pressure controlled Chochralski method" Proc.of 8th conf.on semi-insulating III-V materials, Warsaw Poland, World Scientific Publishing. 11-18 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Yamada and M.Fukuzawa: "Scanning infrared polariscope as routine tool for quantitative characterization of residual strains" Proc.of 8th conf.on semi-insulating III-V materials, Warsaw Poland, World Scientific Publishing. 95-98 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Fukuzawa and M.Yamada: "High-spatial-resolution characterization of residual strain in commercial LEC-grwon InP (100) wafres" Proc.7th Int.Conf.on Indium Phosphide and Related Materials, Sapporo Japan, IEEE Cat.#95CH35720. 674-677 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Yamada, M.Fukuzawa, T.Kawase, M.Tatsumi, and K.Fujita: "Photoelastic characterization of slip lines gen-" Proc.of 22th Int.Symp.on Compound Semiconductors, Cheju Korea. (in press). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M. Fukuzawa: "High-spatial-resciution characterization of residual strain in commercial LEC-grown InP(100)wafres" Proc. 7th Int. Conf. on Indium Phosphide and Related Materials, Sapporo Japan, IEEE Cat.♯95CH35720. 674-677 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] M. Yamada: "Photoelastic Characterization of slip lines generated by thermal processing with ring holder" Proc. of 22th Int. Symp. on Compound Semiconductirs, Cheju Korea. (in press). (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] M.Yamada: "Scanning Infrared polariscope as routine tool for quantitative characterization of residual strains" Proc.of 8th Conf.on Semi-Insulating III-V Materials. Warsaw(in press). (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] M.Tatsumi: "Characterization of semi-insulating III-V materials grown by vapor pressure controlled Czochralski method" Proc.of 8th Conf.on Semi-Insulating III-V Materials. Warsaw(in press). (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] M.Yamada: "Quantitative photoelastic characterization of residual strains in LEC-grown indium phosphide(100)wafers" Proc.of 5th Int.Conf.on Indium Phosphide and Related Materials. IEEE Cat.# 93CH3276-3. 69-72 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] M.Yamada: "High-sensitivity computer-controlled infraraed polariscope" Review of Scientific Instruments. 64. 1815-1821 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] M.Yamada: "Study of residual strains in horizontal-Bridgman-grown gallium arsenide wafers by a high-sensitivity computer-controlled infrared polariscope" Journal of Applied Physics. 74. 2436-2439 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] M.Yamada: "Relief of residual strains in gallium phosphide(100)wafers by cracking" Journal of Applied Physics. 74. 6435-6436 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] M.Yamada: "Anomalous Increase of Residual Strains Accompanied with Slip Generation by Thermal Annealing of LEC GaAs Wafers" Proc.of 20th Int.Symp.on GaAs and Related Compounds,Freiburg. (in press). (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] M.Yamada: "Macroscopic and Microscopic Characterizations of Residual Strains in LEC-grown III-V Compound Wafers" Proc.of 5th Int.Conf.on Defect Recognition and Image Processing in Semiconductors and Devices,Santander. (in press). (1993)

    • Related Report
      1993 Annual Research Report

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Published: 1993-04-01   Modified: 2016-04-21  

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