• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Highly Spatially Resolved Measurement of Impurities and Defects in Semiconductors by Scanning-Beam Micro-Photoluminescence Spectroscopy

Research Project

Project/Area Number 05555005
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionInstitute of Space and Astronautical Science

Principal Investigator

TAJIMA Michio  Institute of Space and Astronautical Science Division of Space Application Professor, 衛星応用工学研究系, 教授 (30216965)

Co-Investigator(Kenkyū-buntansha) IINO Takayuki  Sumitomo Metal Mining Co., Ltd.Electronic Materials Lab.Senior Researcher, 電子材料研究所, 研究員
TERASHIMA Koichi  NEC Corporation Microelectronics Res.Labs.Chief Scientist, マイクロエレクトロニクス研究所, 主任
ABE Takao  Shin-Etsu Handotai Co., Ltd.Semiconductor Lab.Researching Manager, 半導体研究所, 研究主幹
WARASHINA Masatoshi  Institute of Space and Astronautical Science Division of Space Application Resea, 衛星応用工学研究系, 助手 (50013727)
Project Period (FY) 1993 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥9,500,000 (Direct Cost: ¥9,500,000)
Fiscal Year 1995: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1994: ¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 1993: ¥6,400,000 (Direct Cost: ¥6,400,000)
KeywordsPhotoluminescence / Crystal characterization / Microspectropotometry / Semiconductor / フォトルミネッサンス
Research Abstract

Highly spatially resolved mapping of photoluminescence (PL) in the infrared region at low temperatures has been carried out for the analysis of deep-levels in semiconductors. A unique scanning-laser-beam type of apparatus was developed with an excitation beam of 10 mum diam, a scanning area of 1 mm x 1 mm, a wavelength region between 600 and 1800 nm, and a temperature ragne between 15 and 300 K.
The microscopic mapping of deep-level PL from an annealed Czochralski-grown Si crystal with slip dislocations was analyzed for the first time. An opposite intensity contrast between the 0.77 eV band (D_b band) and dislocation-related D-lines gives strong evidence for the idea that the D_b band is due not to dislocations but to oxygen precipitates.
Microscopic intensity variations of photolumiinescence (PL) bands around dislocations were studied on Si-doped, liquid-encapsulated vertical boat grown GaAs at low temperatures. PL mappings were measured for four emission bands : the 1.49eV band of free-to-acceptor and donor-acceptor transitions involving Si_<As>, the 1.33eV band associated with B_<As>, the 1.15eV band due to V_<Ga> complex, and the 0.95eV band which appears commonly in n-type GaAs but has not yet been identified definitely. The PL intensity patterns of each emission band are explained based on the concept that defects have been gettered by the dislocations and that the area near the dislocations is more As-rich than that farther away.

Report

(4 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • 1993 Annual Research Report
  • Research Products

    (28 results)

All Other

All Publications (28 results)

  • [Publications] M.Tajima,H.Takeno,M.Warashina and T.Abe: "Role of Point Defects on Oxygen Agglomeration in Si" Defects in Semiconductors 17 ; Mat.Sci.Forum. 143. 147-152 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Kawanaka,M.Tajima,M.Warashina,H.Okada: "Characterization of Vertical Gradient Freeze Grown GaAs Single Crystals by Photoluminescence" Abstracts of 8th Conference on Semi-Insulating III-V Materials,Warsaw. A14- (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima,M.Warashina,H.Takeno and T.Abe: "Effect of Point Defects on Oxygen Aggregation in Si at 450℃" Appl.Phys.Lett.65. 222-224 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima,R.Toba,N.Ishida and M.Warashina: "Optical and Electrical Nonumiformity around Dislocations in Si-Doped GaAs" Abstract for 1st International Conference on Materials for Microelectronics. 108-109 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima,M.Warashina,T.Hisamatsu,A.Suzuki and S.Ibuka: "Photoluminescence Characterization of Phosphorus Diffusion Gerring in Silicon Substrates for Solar Cells" EEE Proc.First World Conference on Photovoltaic Energy Conversion. 1599-1602 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima,M.Tokita and M.Warashina: "Photoluminescence due to Oxygen Precipitates Distributed from the D Lines in Annealed Si" Material Science Forum. 196-201. 1749-1754 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Terashima,T.Ikarashi,H.Ohno and M.Tajima: "Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon" Material Science Forum. 196-201. 1129-1134 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] R.Toba,M.Warashina and M.Tajima: "Spatial Distribution of Microdefects around Dislocations in Si-Doped GaAs" Material Science Forum. 196-201. 1785-1790 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima: "Infrared Microscopic Photoluminescence Mapping on Semiconductors at Low Temperatures" Inst.Phys.Conf.Ser.149. 243-249 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima,Y.Kawate,R.Toba,M.Warashina and A.Nakamura: "Microscopic Photoluminescence Mapping of Si-Doped GaAs around Dislocations at Low Temperatures" Inst.Phys.Conf.Ser.149. 257-262 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima, Th.Takeno, M.Warashina and T.Abe: "Role of Point Defects on Oxygen Agglomeration in Si" Defects in Semiconductors 17 ; Mat.Sci.Forum. Vol.143-147. 147-152 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Kawanaka, M.Tajima, M.Warashina, H.Okada: "Characterization of Vertical Gradient Freeze Grown GaAs Single Crystals by Photoluminescence" Abstracts of 8th Conference on Semi-Insulating III-V Materials, Warsaw. p.A14. (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Effect of Point Defects on Oxygen Aggregation in Si at 450゚C: "Appl.Phys.Lett." 65. 222-224 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima, R.Toba, N.Ishida and M.Warashina: "Optical and Electrical Nonuniformity around Dislocations in Si-Doped GaAs" Abstract for 1st International Conference on Materials for Microelectronics. 108-109 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima, M.Warashina, T.Hisamatsu, A.Suzuki and S.Ibuka: "Photoluminescence Characterization of Phosphorus Diffusion Gerring in Silicon Substrates for Solar Cells" EEE Proc.First World Conference on Photovoltaic Energy Conversion. 1599-1602 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima, M.Tokita and M.Warashina: "Photoluminescence due to Oxygen Precipitates Distributed from the D Lines in Annealed Si" Material Science Forum. Vols.196-201. 1749-1754 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Terashima, T.Ikarashi, H.Ohno and M.Tajima: "Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon" Material Science Forum. Vols.196-201. 1129-1134 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] R.Toba, M.Warashina and M.Tajima: "Spatial Distribution of Microdefects around Dislocations in Si-Doped GaAs" Material Science Forum. Vols.196-201. 1785-1790 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima: "Infrared Microscopic Photoluminescence Mapping on Semiconductors at Low Temperatures" Inst.Phys.Conf.Ser.No.149, (DRIP 95). 243-249 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima, Y.Kawate, R.Toba, M.Warashina and A.Nakamura: "Microscopic Photoluminescence Mapping of Si-Doped GaAs around Dislocations at Low Temperatures" Inst.Phys.Conf.Ser.No.149, (DRIP 95). 257-262 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Tajima: "Photoluminescence Due to Oxygen Precipitates Distinguished from the D Lines in Annealed Si" Proceedings of 18th Internat. Conf.Defects in Semiconductors : Materials Science Forum. 196-201. 1749-1754 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Terashima: "Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon" Proceedings of 18th Internat. Conf.Defects in Semiconductors : Materials Science Forum. 196-201. 1129-1134 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] R.Toba: "Spatial Distribution of Microdefects around Dislocations in Si-Doped GaAs" Proceedings of 18th Internat. Conf.Defects in Semiconductors : Materials Science Forum. 196-201. 1785-1790 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] M.Tajima: "Optical and Electrical Nonuniformity around Dislocations in Si-Doped GaAs" Materials Science and Technology. (to be published). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] M.Tajima: "Microscopic Photoluminescence Mapping of Si-Doped GaAs around Dislocations at Low Temperatures" Proc.1995 Conference on Defect Recognition and Image Processing in Semiconductors.(to be published). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] M.Tajima: "Infrared Microscopic Photoluminescence Mapping on Semiconductors at Low Temperatures" Proc.1995 Conference on Defect Recognition and Image Processing in Semiconductors.(to be published). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] M.Tajima: "Optical and Electrical Nonuniformity around Dislocations in Si‐Doped GaAs" Materials Science and Technology. (発表予定). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] M.Tajima: "Photoluminescence Characterigation of Phosphorus Diffusion Gertering in Silicon Substrates for Salar Cells" Proc.First World Conference on Photovoltaic Energy Convension. (発表予定). (1995)

    • Related Report
      1994 Annual Research Report

URL: 

Published: 1993-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi