| Project/Area Number |
05555010
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| Research Category |
Grant-in-Aid for Developmental Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
表面界面物性
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| Research Institution | Kyushu Institute of Technology |
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Principal Investigator |
ASANO Tanemasa Kyushu Institute of Technology, Center for Microelectronic Systems Professor, マイクロ化総合技術センター, 教授 (50126306)
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| Co-Investigator(Kenkyū-buntansha) |
MAKIHIRA Kenji Kyushu Institute of Technology, Center for Microelectronic Systems Research Asso, マイクロ化総合技術センター, 助手 (10253569)
AOKI Satoshi Kyushu Institute of Technology, Center for Microelectronic Systems Research Asso, マイクロ化総合技術センター, 助手 (40231758)
HIGA Katsuya Kyushu Institute of Technology, Center for Microelectronic Systems Research Asso, マイクロ化総合技術センター, 助手 (40238259)
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| Project Period (FY) |
1993 – 1994
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| Project Status |
Completed (Fiscal Year 1994)
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| Budget Amount *help |
¥5,000,000 (Direct Cost: ¥5,000,000)
Fiscal Year 1994: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1993: ¥4,000,000 (Direct Cost: ¥4,000,000)
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| Keywords | electron-wave interference / vacuum microelectronics / micron-size electron emitter / field emission / diamond / 電子干波渉効果 / 微小冷陰極 / 微細加工技術 |
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| Research Abstract |
This project has been aiming at realization of a new electron-wave interference devices by using vacuum microelectronics technology. During the term of project, following fundamentals have been revealed.
(1) A new three terminal electron-wave interference device, which is composed of micron-size field electron emitter, deflection electrodes, and a collector electrode, has been proposed. Simulation base on quantum physics has been revealed that the device performing a very large logic swing can be prepared with 100nm-level fabrication technology which is available today, and that the device operates at voltages as low as the thermal voltage.
(2) A new self-aligned process technology, which utilizes the control of the shadowing effect in the sputter deposition of films, has been developed for fabricating silicon micro-emitter. By using this process, it became possible to operates the micro-emitter at voltages as low as about ten volts.
(3) It has been found that diamond synthesized on silicon is very promissing as a new material for the micro-field emitter. Effects of doping, thermal treatments, plasma treatments have been revealed. It has also been shown that ion milling is useful for fabrication of diamond field emitters.
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