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DEVELOPMENT OF SINGLE-ELECTRON-TRANSISTOR

Research Project

Project/Area Number 05555085
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

TSUBOUCHI Kazuo  Tohoku Univ., Res. Inst. Elect. Commun., Professor, 電気通信研究所, 教授 (30006283)

Co-Investigator(Kenkyū-buntansha) MASU Kazuya  Tohoku Univ., Res. Inst. Elect. Commun., Associated Prof., 電気通信研究所, 助教授 (20157192)
Project Period (FY) 1993 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥18,700,000 (Direct Cost: ¥18,700,000)
Fiscal Year 1995: ¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 1994: ¥6,500,000 (Direct Cost: ¥6,500,000)
Fiscal Year 1993: ¥9,200,000 (Direct Cost: ¥9,200,000)
KeywordsColomb-Blockade / Tunneling Junction / Single-electron Transistor / Single-Crystal Aluminum CVD / Selective Deposition / Atomic-Resist Process / シングルエレクトロントランジスタ / Al CVD
Research Abstract

Single electron devices based on Coulomb blockade phenomena in ultrasmall tunnel junctions are promising candidates of elemental logic devices in nanometer/angstrom-era's ULSI.Coulomb blockade phenomena has been observed at very low temperatures of mK-30K range. If the very small tunnel junctions of about 10nm^2 are fabricated with sufficient reproducibility, there is great possibility of room-temperature single electron logic devices. The aim of this work is to develop fundamentals of room-temperature single electron devices : (1) a new logic circuit configuration with feed-back loop and (2) nano fabrication technology based on selective Al CVD.
At first, we have developed Monte Carlo simulator which can analyze the SET circuit. We have proposed a new circuit configuration ; the inverter circuit with feed-back loop, With the feed back loop, the circuit instability due to the atochastic tunneling is found to be suppressed.
As nanometer fabrication technology, we have investigated selective Al CVD technology. The selective Al-CDV technology is a key technology to fabricated metal/insulator/metal ultrasmall tunnel junctions with sufficient reproducibility. We have proposed a new atomic hydrogen resist process based on the selective Al CVD.In the atomic hydrogen resist process, monolayr thick terminated-H on Si surface is exposed by the electron beam. The terminated-H which is irradiated by the electron beam is removed and then the surface is oxidized. Aluminum is selectively deposited on the remaining terminated-H area. Using this atomic hydrogen resist process, we have successfully fabricated the Al pattern and Al wires on Si surface.

Report

(4 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • 1993 Annual Research Report
  • Research Products

    (78 results)

All Other

All Publications (78 results)

  • [Publications] K. Tsubouchi: "Selective Al CVD Technology for ULSI (Invited Paper)" The 2nd Pacific Rim International Conference on Advanced Materials and. (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K. Masu: "Stable Operation of Single Electron Logic Circuits with Feed-Back Loop" Ext. Abst. the 1995 Int. Conf. on Sold State Devices and Materials, Osaka. 1079-1080 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H. Matsuhashi: "Mirror-Like Surface Morphology of CVD-Al on TiN by ClF_3 Pretreatment" Advanced Metallization for ULSI Applications in 1995, Tokyo. (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K. Masu: "Multilevel Metallization Based on Al CVD" 1996 Symposium on VLSI Technology, Hawaii, U. S. A.(To be presented). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 坪内 和夫: "選択Al CVD法によるSi基盤上へのナノ構造形成" 表面化学. 16(10). 644-650 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 松橋 秀樹: "選択Al-CVD技術におけるプラズマレスClF_3表面クリーニング(II)" 1995年秋季第56回応用物理学会学術講演会(1995年8月). 26p-ZQ-12 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 後藤 晶央: "選択Al-CVD技術におけるプラズマレスClF_3表面クリーニング(III)" 1995年秋季第56回応用物理学会学術講演会(1995年8月). 26p-ZQ-13 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 後藤 晶央: "選択Al-CVD技術におけるプラズマレスClF_3表面クリーニング(IV)" 1996年春季第43回応用物理学関係連合講演会(1996年3月). (講演予定). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 松橋 秀樹: "ClF_3クリーニング後のTiN表面に堆積したCVD Al膜の抵抗率" 1996年春季第43回応用物理学関係連合講演会(1996年3月). (講演予定). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Tsubouchi, et al: "Area-Selective CVD of Metals" Thin Solid Films (Invited paper). 228. 213-318 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Masu, et al: "Contribution of Free Electrons to Al CVD on a Si Surface by Photo-Excitation" Appl. Surface Science. 79/78. 237-243 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Masu, et al: "Atomic Hydrogen Resist Process with Electron Beam Lithography for Selective Al Patterning" J.Vac. Sci. & Tech.(Invited paper). B12 (6). 3270-3274 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Tsubouchi, et al: "Precursor Design and Selective Aluminium CVD" Vacuum, (Invited paper). 46,11. 1249-1253 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Tsubouchi, et al: "Effects of Hydrogen Terminated Substrate Surface on Succeeding Selective Deposition" Material Research Society Symposium Proceedings. Vol.315. 59-70 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Tsubouchi, et al: "Metal CVD Technology" Proceedings of the 3rd IUMRS International Conference on Advance Materials (Tokyo, 1993) ; Trans. Mat Res. Soc. Jpn. 14B. 1327-1332 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Masu, et al: "Cotribution of Free Electron to Al CVD on Si Surface by Photo-Excitation" First International Conference on Photo-Excited Process and Applications, Sendai. O-10. 99 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Masu, et al: "Schottky Barrier Height of Single Crystal CVD-Al/Si Contact" Proceedings of Advanced Metallization for ULSI Applications in 1993. 301-307 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Masu, et al: "Area-Selective Al CVD Technology" Proc.of Int. cont. on Advanced Microelectronic Devices and Processing, Sendai, (Invited Paper). 77-84 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al.: "Single Crestal CVD-Al/Si Schottky Contact" Proc.of Int. cont. on Advanced Microelectronic Devices and Processing, Sendai. 495-500 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Masu, et al: "Atomic Hydrogen Resist Process with Electron Beam Lithography for Selective Al Patterning" The 38th International Symphosium on Electron, Ion and Photon Beams (EIPB '94), New Orleans, (Invited Paper). C2 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Tsubouchi, et al: "Precursor Design and Selective Aluminum CVD" 4th European Vacuum Conference and lst Swedish Vacuum Meeting, Uppsala, (Invited Paper). Orals-34 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Masu, et al: "Selective Al CVD Technology for ULSI Application" Advanced Metallization for ULSI Applocations in 1994, Austin (Invited Paper). Session 9-1. (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Selective Al CVD Technology for ULSI Application: "Advanced Metallization for ULSI Applications in 1994, Austin (Invited Paper)" Session9-1 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Masu, et al: "Stable Operation of Single Electron Logic Circuits with Feed-Back Loop" Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials. August 21-24, Osaka. 1079-1080 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al: "Mirror-Like Surface Morphology of CVD-Al on TiN by CIF_3 Pretreatment" Advanced Materiallization for ULSI Applications in 1995, Tokyo. (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Masu, et al: "Multilevel Metallization Based on Al CDV" 1996 Symposium on VLSI Technology, Hawaii, June 11-13. (To be presented).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Tsubouchi, et al: "Selective Al CVD for ULSI Interconnection" IEICE Technical Reprt. SDM94-80. (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al: "CIF_3 Pre-Cleaning in Selective Al-CVD" IEICE Technical Reprt. SDM95-98. (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Tsubouchi, et al: "Process Technology for Single Electron Devices" Extended Abstracts (The 54th Autumn Meeting, 1993) ; The Japan Society of Applied Physics. 28p-HB-7.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al: "Contribution of Surface Free Electron to Selective Al-CVD" Extended Abstracts (The 54th Autumn Meeting, 1993) ; The Japan Society of Applied Physics. 29a-ZE-8.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al: "Single Crystal Al/Si Shottky Barrier Height Using Selective Al-CVD with DMAH" Extended Abstracts (The 41st Spring Meeting, 1994) ; The Japan Society of Applied Physics and Related Societies. 30p-ZH-9.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al: "Improvement of Morphology of CVD-Al Film" Extended Abstracts (The 55th Autumn Meeting, 1994) ; The Japan Society of Applied Physics. 21a-ZD-7.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] J.-H.Chung, et al: "Blanket Al CVD using insitu CIF_3 Pre-Cleaning" Extended Abstracts (The 42nd Spring Meeting, 1995) ; The Japan Society of Applied Physics and Related Societies. 29p-K-10.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al: "CIF_3 Pre-Cleaning in Selective Al-CVD" Extended Abstracts (The 42nd Spring Meeting, 1995) ; The Japan Society of Applied Physics and Related Societies. 29p-K-9.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al: "CIF_3 Pre-Cleaning in Selective Al-CVD(II)" Extended Abstracts (The 56th Autumn Meeting, 1995) ; The Japan Society of Applied Physics. 26p-ZQ-12.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A.Gotoh, et al: "CIF_3 Pre-Cleaning in Selective Al-CVD(III)" Extended Abstracts (The 56th Autumn Meeting, 1995) ; The Japan Society of Applied Physics. 26p-ZQ-13.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A.Gotoh, et al: "CIF_3 Pre-Cleaning in Selective Al-CVD(IV)" Extended Abstracts (The 43rd Spring Meeting, 1995) ; The Japan Society of Applied Physics and Related Societies. 27a-Q-8.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al: "Resistivity of CVD Al on TiN Pretreated with CIF_3" Extended Abstracts (The 43rd Spring Meeting, 1995) ; The Japan Society of Applied Physics and Related Societies. 27a-K-9.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Tsubouchi, et al: "Surface Terminated Hydrogen and Its Application to Al CVD" Extended Abstracts (The 43rd Spring Meeting, 1995) ; The Japan Society of Applied Physics and Related Societies. 27p-H-7.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Tsubouchi, et al: "Selective Chemical-Vapor-Deposition of Aluminum Thin Film" Oyo Buturi. 62 (11). 1225-1229 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Tsubouchi, et al: "Fabrication of Nanometer-Structure Using Selective Al-CVD" Kotai Buturi. 29 (7). 13-19 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Tsubouchi, et al: "Fabrication of Nanometer-Structure on Silicon Subatrate Using Selective Al-CVD" Hyoumenkagaku. 16 (10). 644-650 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K. Tsubouchi: "Selective Al CVD Technology for ULSI(Invited Paper)" The 2nd Pacific Rim International Conference on Advanced Materials and Processing, Kyongju, Korea. (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K. Masu: "Stable Operation of Single Electron Logic Circuits with Feed-Back Loop" Ext. Abst. the 1995 Int. Conf. on Sold State Devices and Materials, Osaka. 1079-1080 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] H. Matsuhashi: "Mirror-Like Surface Morphology of CVD-Al on TiN by ClF_3 Pretreatment" Advanced Metallization for ULSI Applications in 1995, Tokyo. (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K. Masu: "Multilevel Metallization Based on Al CVD" 1996 Symposium on VLSI Technology, Hawaii, U. S. A.(To be presented). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] 坪内 和夫: "選択Al CVD法によるSi基板上へのナノ構造形成" 表面化学. 16(10). 644-650 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 松橋 秀樹: "選択Al-CVD技術におけるプラズマレスClF_3表面クリーニング(II)" 1995年秋季 第56回応用物理学会学術講演会(1995年8月). 26p-ZQ-12 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 後藤 晶央: "選択Al-CVD技術におけるプラズマレスClF_3表面クリーニング(III)" 1995年秋季 第56回応用物理学会学術講演会(1995年8月). 26p-ZQ-13 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 後藤 晶央: "選択Al-CVD技術におけるプラズマレスClF_3表面クリーニング(IV)" 1996年春季 第43回応用物理学関係連合講演会(1996年3月). (講演予定). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] 松橋 秀樹: "ClF_3クリーニング後のTiN表面に堆積したCVD Al膜の抵抗率" 1996年春季 第43回応用物理学関係連合講演会(1996年3月). (講演予定). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Masu: "Contribution of Electrons to Al CVD on A Si Surface by Photo-Excitation" Applied Surface Science. 79/80. 237-243 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Tsubouchi: "Metal CVD Technology" Transactions on Material Research society Japan. 14B. 1327-1332 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Tsubouchi: "Precursor Design and Selective Aluminum CVD(lnvited Paper)" The 4th European Vauum Conference and 1st Swedish Vacuum Meeting.Uppsala,Swedon. Orals-34 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Masu: "Atomic Hydrogen Resist Process with Electron beam Lithography for selective Al Pattering(lnvited Paper)" The 38th International Symposium on Electron,Ion and Photon Beams(EIPB′94),New Orleans,U.S.A. C2 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Masu: "Selective Al CVD Technology for ULSI Application(Invited Paper)" Advanced Metallization for ULSI Applications in 1994,Austin,U.S.A. Session 9 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Masu: "Atomic Hydrogen Resist Process with Electron Beam Lithography for Selective Al Patterning" Journal of Vacuum Science & Technology. B12. 3270-3274 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Tsubouchi: "Selective Al CVD Technology for ULSI(Invited Paper)" The 2nd Pacific Rim Interational Conference on Advanced Materials and Processing,Kyongju,Korea. To be presented. (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] 坪内 和夫: "選択AlCVD技術によるナノ構造形成" 個体物理. 29. 13-19 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 松橋 秀樹: "DMAHを用いたCVD-Al膜の表面モルフォロジーの改善" 1994年秋季 第55回応用物理学会学術講演会(1994年9月). 21a-ZD-7 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 松橋 秀樹: "選択Al-CVD技術におけるプラズマレスCIF_3表面クリーニング" 1995年春季 第42回応用物理学関係連合講演会(1995年3月). 講演予定. (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] 鄭 周赫: "in-situ CIF_3前処理によるブランケットAlCVD" 1995年春季 第42回応用物理学関係連合講演会(1995年3月). 講演予定. (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Tsubouchi: "Area-Selective CVD of Metals(Invited Paper)" Thin Solid Films. 228. 312-318 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Masu: "Contribution of Free Electron to Al CVD on Si Surface by Photo-Excitation" Appl.Surface Science. (to be published). (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Tsubouchi: "Effects of Hydrogen Terminated Substrate Surface on Succeeding Selective Deposition(Invited Paper)" Material Research Society Symposium Proceedings,“Surface Chemical Cleaning and Passivation for Semiconductor Processing". 315. 59-70 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Tsubouchi: "Metal CVD Technology(Invited Paper)" The 3rd IUMRS International Conference on Advanced Materials. S3-1 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Masu: "Contribution of Free Electron to Al CVD on Si Surface by Photo-Excitation" First international Conference on Photo-Excited Processes and Applications,Sendai. 99 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Masu: "Schottky Barrier Height of Single Crystal CVD-Al/Si Contact" Advanced Metallization for ULSI Applications,Japan Conference,Tokyo. 27-28 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Tsubouchi: "Area Selective Al CVD Technology(Invited Paper)" Proceedings of International Conference on Advanced Microelectronic Devices and Processing,Sendai. 77-84 (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] H.Matsuhashi: "Single Crystal CVD-Al/Si Schottky Contact" Proceedings of International Conference on Advanced Microelectronic Devices and Processing,Sendai. 495-500 (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Tsubouchi: "Precursor Design and Selective Aluminum CVD(Invited Paper)" 4th European Vacuum Conference and 1st Swedish Vacuum Meeting,Uppsala,Sweden. (to be presented). (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] K.Masu: "Atomic Hydrogen Resist Process with Electron Beam Lithography for Selective Al Patterning(Invited Paper)" The 38th International Symposium on Electron,Ion and Photon Beams(EIPB'94)New Orleans. (to be presented). (1994)

    • Related Report
      1993 Annual Research Report
  • [Publications] 坪内和夫: "選択Al CVD技術" 平成5年 電気学会 電子・情報・システム部門大会 シンポジウム(半導体プロセスの高性能化技術)(1993年7月16日). 133-136 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] 坪内和夫: "選択Al・CVD技術" 磁性材料研究会・電子材料表面処理技術部会 合同例会資料(1993年7月16日、17日). (1993)

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      1993 Annual Research Report
  • [Publications] 坪内和夫: "水素終端Si表面のAl選択成長" 日本学術振興会 極限構造電子物性第151委員会、(1993年12月13,14日). 28-35 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] 坪内和夫: "シングルエレクトロンデバイスのためのプロセス技術" 1993年秋季 第54回応用物理学会学術講演会(1993年9月). 28p-HB-7 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] 松橋秀樹: "選択Al-CVDにおける表面自由電子の寄与" 1993年秋季 第54回応用物理学会学術講演会(1993年9月). 29a-ZE-8 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] 松橋秀樹: "DMAHを用いた選択Al-CVDによる単結晶AlとSi界面のショットキー障壁高さ" 1994年春季 第41回応用物理学関連連合講演会(1994年3月). (講演予定). (1994)

    • Related Report
      1993 Annual Research Report

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Published: 1993-04-01   Modified: 2016-04-21  

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