| Budget Amount *help |
¥11,000,000 (Direct Cost: ¥11,000,000)
Fiscal Year 1994: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1993: ¥10,000,000 (Direct Cost: ¥10,000,000)
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| Research Abstract |
At the first year, a desk plan was established for the soft X-ray emission spectroscopy equipment, using a multi-channel detector. Then it was constructed using MCD,etc., which enabled to measure energy spectrum of photons emitted from a specimen in a certain energy range, e.g., hnu_1-hnu_2, simultaneously, although the one equipped already could measure such spectrum only point by point. The new method was acertained to have an expected performance with even higher energy resolution than the old one. Then, the system was also ascertained to be used as a non-destructive analysis tool of a thin film contact system using either IAV (incident angle variation) or IEV (incident energy variation) method.
As for the research on the ultra-thin contact formation, low temperature contact formation processes were investigated, e.g., for a Fe (thin film) -Si (substrate) contact system. Then, we found that, for the Fe-Si system, Fe-rich silicides were formed at low temperatures, and Si became rich a
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t higher temperatures to have final phase of FeSi_2 at the highest temperature (-800ﾟC which was much less than the melting point of the compound) . Mixed phases were observed at some moderate annealing temperatures. The correlation between the heating temperature and the silicide phase formed which was found in the present study will help the formation of a ultra-thin contact.
Also, MnP-type transition metal monosilicides, i.e., PdSi, NiSi and PtSi, were studied in view of finding the correlation between the structure and the electronic property, where metal (M) atoms, i.e., Pd, Ni and Pt, have the same number of valence electrons, i.e., 10 electrons. Soft X-ray emission spectroscopy analysis of the silicide have shown that there is a meaningful correlation between atomic distances of M-Si, or Si-Si, and the valence band electronic structures of the silicides. This result indicates that the band structure manipulation will be possible by modifying atomic distances in a silicide, which means the electronic property, e.g., the conductivity, could possibly be manipulated. Less
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