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Appararus of Reflection High Energy Electron Diffraction-Physical Proparty Measurments for Grown Surface Atomic Layr at Low temperature

Research Project

Project/Area Number 05559005
Research Category

Grant-in-Aid for Developmental Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field 広領域
Research InstitutionUniversity of Tokyo

Principal Investigator

INO Shozo  Graduate School of Science, Professor, 大学院・理学系研究科, 教授 (70005867)

Co-Investigator(Kenkyū-buntansha) SHIMOKOSHI Fumio  Graduate School of Science, Assistant, 大学院・理学系研究科, 助手 (00013409)
HASEGAWA Shuji  Graduate School of Science, Assistant Professor, 大学院・理学系研究科, 助教授 (00228446)
Project Period (FY) 1993 – 1994
Project Status Completed (Fiscal Year 1994)
Budget Amount *help
¥7,000,000 (Direct Cost: ¥7,000,000)
Fiscal Year 1994: ¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 1993: ¥4,500,000 (Direct Cost: ¥4,500,000)
Keywordsreflection high energy electron diffraction / surface conductivity / epitaxy / semiconductor surface / metal ultra thin film / 反射高速電子回折(RHEED)
Research Abstract

We constructed a sample holder which can cool to low temperature and measure physical proparties during growth of surface atomic layrs. The sample holder was combined with an exsisting RHEED apparatus. Using the instrument, we measured RHEED intensity oscillations, depth distributions of surface elements and surface conductance.
The important factors to govern epitaxy are substrate temperature, deposition rate and atom supplying methods etc. Thus, we changed systematically surface temperatures and deposition rates, during Ag and Cu deposition on Si (111) surface. As a result, we obtained following results. (1) When surface temeperature was decreased to 160 K,many RHEED intensity oscillations (20-46 peaks) were observed compered with at room temperature, (2) For higher deposition rate of 20ML/min. many RHEED oscillation peaks were observed.(3) These experimental results show that the change of surface temperatures and deposition rates induce the change of diffusion length. Considering th … More e effects, we proposed a new growth modes.
When Au was deposited on a Si (111) -ROO<3>*ROO<3>-Ag surface, we found new growth modes "substitution atom growth mode" and "floating atom growth modes". To study the stability of the structures, we heated these surface to higher temperatures. As a result, these surface structures were stable under about 300゚C.However, they were unstable and change to an alloy above 400゚C.These results are not contradict to the old phase diagram of Au-Ag alloy. Thus, our results implying that the stability of the Au-Ag alloy must be reexamine considering the surface effects. This is a new essential problem on the stability for Au-Ag alloy.
During Ag deposition on the Si (111) -ROO<3>*ROO<3>-Ag surface, we found new surface structures, ROO<21>*ROO<21>-Ag and 6*6-Ag. These structures showed diffrent surface conductance and their behaviors during epitaxy. This means that the surface conductance measurements gives very important infomations for surface structure study. Less

Report

(3 results)
  • 1994 Annual Research Report   Final Research Report Summary
  • 1993 Annual Research Report
  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] 井野正三、長谷川修司、山中俊朗: "Surface Dynamics and Surface Conductance in Epitaxial Growth by RHEED and TRAXS" Physics of Low-Dimensional Structures. 2. 1-9 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 花田貴、井野正三、大門寛: "Study of the Si( lll) -7×7 Surface by RHEED Rocking Curve Analysis" Surface Science. 313. 143-154 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Y. Ma. S. Londi. J. A. Eades, 井野正三: "Reflection High-Energy Electron Diffraction Analysis of the Si( lll) -7×7 Reconstruction" Physical Review. B49. 17488-17451 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 張志弘、長谷川修司、井野正三: "RHEED-TRAXS Study of Surface Structure and Tharmal Resorption of Cu on Si( lll) Surface" The Strudure of Surfaces. 4. 371-376 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 長谷川修司、井野正三: "Correlation Between Atomic Scale Structure and Macrascopic Electrical Properties of Metal-Covered Si( lll) Surlaces Investigated by in-situ Measurement in UHV" The Structure of Surfaces. 4. 377-382 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 井野正三、山中俊朗: "Study of Atomic Repth Distrilution and Growth Modes During Epitaxial Growth of Sn on Si( lll) -√<3>×√<3>-Ag by TRAXS" The Structure of Surfaces. 4. 402-407 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Ino, S.Hasegawa and T Yamanaka: "Surface Dynamics and Surface Conductance in Epitaxial Growth Studied by RHEED and TRAXS." Physics of Low-Dimensional Structure. 2. 1-8 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] T.Handa, S.Ino and H.Daimon: "Study of the Si (111) -7*7 Surface by RHEED Rocking Curve Analysis." Surf.Sci.313. 143-154 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Y.Ma, S.Lordi, J.A.Eades and S.Ino: "Reflection High Energy Electron Diffraction Analysis of the Si (111) -7*7 Reconstruction." Phys.Rev.B49. 17488-17451 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Z.H.Zhang, S.Hasegawa and S.Ino: "RHEED-TRAXS Study of Surface Structure and Thermal Desorption of Cu on Si (111) Surface" Structure of Surf.4. 371-376 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Hasegawa and S.Ino: "Correlation Between Atomic-Scale Structure and Macroscopic Electrical Properties of Metal-Coverd Si (111) Surfaces Investigated by in-situ measurements in UHV." Structure of Surf.4. 377-382 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Ino and T.Yamanaka: "Study of Atomic Depth Distribution and Growth Modes During Epitaxial Growth of Sn on Si (111)-ROO<3>*ROO<3>-Ag by RHEED-TRAXS(Total Reflection Angle X-ray Spectroscopy)." Structure of Surf.4. 402-407 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 井野正三,長谷川修司,山中俊朗: "Surface Dynamis and Surtace Conduotance in Epitaxial Growth Studied by RHEED and TRAXS" Physics of Low-Dimensional Structures. 2. 1-9 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 花田貴,井野正三,大門寛: "Study of the Si(111)-7×7 Surtace by RHEED Rocking Curve Analysis" Surtace Science. 313. 143-154 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Y.Ma,S.Lordi,J.A.Eades 井野正三: "Retlection High-Energy Electron Diffraction Amalysis of the Si(111)7×7 Reconstruction" Physical Review. B49. 17451-17488 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 張志弘,長谷川修司,井野正三: "RHEED-TRAXS Study of Surtace Struoture and Thormal Desorption of Cu or Si(111) Surtace" The Structure of Surtaces. 4. 371-376 (1993)

    • Related Report
      1994 Annual Research Report
  • [Publications] 長谷川修司,井野正三: "Correlation Between Atomic-Scale Structure and Macroscopic Electrical Properties of Metal-Covered Si(111)Surtaces Investigated by in-situ Measurenront in UHV" The Structure of Surtaces. 4. 377-382 (1993)

    • Related Report
      1994 Annual Research Report
  • [Publications] 井野正三.山中俊朗: "Study of Atomic Depth Ristribution and Gvowth Modes During Epitaxial Growth of Sm on Si(111)-√3×√3-Ag by TRAXS" The Structure of Surtaces. 4. 402-407 (1993)

    • Related Report
      1994 Annual Research Report
  • [Publications] 長谷川修司・井野正三: "Structure-dependent surface conductance at initial stages in metal epitaxy on Si(111)surfaces" Thin Solid Films. 228. 113-116 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] 長谷川修司・井野正三: "Correlation between atomic-scale structures and macroscopic electrical properties of metal-covered Si(111)surfaces" International Journal of Modern Physics B. 7. 3817-3876 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] 遠藤彰・井野正三: "Observation of the Ag/Si(111)system using a high-resolution ultra-high vacuum seanning electron microscope" Surface Science. 293. 165-182 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] 井野正三・山中俊朗: "Surface atom dynamics in epitaxial growth studied by RHEED-TRAXS" Surface Science. 298. 432-439 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] 井野正三(小川四郎編): "回折結晶学と材料科学" アグネ技術センター, 310 (1993)

    • Related Report
      1993 Annual Research Report

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Published: 1993-04-01   Modified: 2016-04-21  

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