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Pseudodirect Excitons in GaAs/AlAs Type-II Superlattices

Research Project

Project/Area Number 05640382
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 固体物性Ⅰ(光物性・半導体・誘電体)
Research InstitutionOsaka City University

Principal Investigator

NAKAYAMA Masaaki  Osaka City University, Faculty of Engineering, Lecturer, 工学部, 講師 (30172480)

Project Period (FY) 1993 – 1994
Project Status Completed (Fiscal Year 1994)
Budget Amount *help
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1994: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1993: ¥1,900,000 (Direct Cost: ¥1,900,000)
Keywordssuperlattice / GaAs / AlAs / type-II band structure / pseudodirect transition / exciton / oscillator strength / G-X mixing / biexciton / 準直接遷移型励起子 / フォトルミネッセンス / 発光特性 / GAMMA-X混成
Research Abstract

I have investigated optical properties of a pseudodirect exciton consisting of an AlAs-X_Z electron and a GaAs-G heavy hole in GaAs/AlAs type-II superlattices (SLs) from the following viewpoints : (1) the oscillator strength of the pseudodirect exciton resulting from a G-X mixing effect in the conduction band, and (2) high density excitation effects such as the formation of biexcitons.All samples were grown on a (001) semi-insulating GaAs substrate grown by molecular-beam epitaxy : (GaAs)_m/(AlAs)_m[(m, m)]SLs with m=8-13 monolayrs and (GaAs)_<10>/(AlAs)_n[(10, n)]SLs with n=10-20 monolayrs.I have obtained the following research results.
(1) The relative oscillator strength of the pseudodirect exciton to the direct exciton as a function of the layr thickness is estimated from the experimental results obtained by photoluminescence (PL), PL-excitaion, and PL-decay-time measurements. The values of the relative oscillator strength in the (m, m) SLs are around 1x10^<-4> and independent of the layr thickness.In the (10, n) SLs the relative oscillator strength decreases from-1x10^<-4> to -1x10^<-5> with the increase of n.The G-X mixing factor producing the oscillator strength is estimated by using a first order perturbation theory.It is concluded that the G-X mixing factor is determined by the overlap of the envelope functions of the G and X_z electrons.
(2) From the excitation-power dependence of the pseudodirect-exciton PL,it has been found for the first time that the biexcitons (exciton molecules) are sufficiently formed at an extremely low excitation power (-1 mW/cm^2) which is two-or three-order lower than in direct-transition-type GaAs quantum wells.The line shape analysis of the biexction PL band indicates that the biexciton-binding energy is about 3 me V.The observed decay time of the biexciton PL is about a half of that of the free exciton, whitch is a typical property of the biexciton dynamics.

Report

(3 results)
  • 1994 Annual Research Report   Final Research Report Summary
  • 1993 Annual Research Report
  • Research Products

    (12 results)

All Other

All Publications (12 results)

  • [Publications] M.Nakayama: "Γ-X mixing effects on photoluminescence intensity in GaAs/AlAs type-II superlattices" Solid State Communications. 88. 43-46 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Nakayama: "Γ-X mixing effects on pseudodirect exciton transitions in GaAs/AlAs type-II superlattices" Physical Review B. 49. 13564-13570 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Nakayama: "Oscillator strength of pseudodirect excition transitions in GaAs/AlAs type-II superlattices" Symposium Record of 13 th Symposium on Alloy Semiconductor Physics and Eletronics. 113-115 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Nakayama: "Biexciton formation in GaAs/AlAs type-II superlattices under extremely low excitation powers" Physical Review B. 51(in press). (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Nakayama: "G-X mixing effects on photoluminescence intensity in GaAs/AlAs type-II superlattices" Solid State Communications. vol.88. 43-46 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Nakayama: "G-X mixing effects on pseudodirect exciton transitions in GaAs/AlAs type-II superlattices" Physical Review B. vol.49. 13564-13570 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Nakayama: "Oscillator strength of pseudodirect exciton transitions in GaAs/AlAs type-II superlattices" Symposium Record of 13th Symposium on Alloy Semiconductor Physics and Electronics(Izu-Nagaoka, July 1994). 113-115 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Nakayama: "Biexciton formation in GaAs/AlAs type-II superlattices under extremely low excitation powers" Physical Review B. vol.51(in press). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] M.Nakayama: "Oscillator Strength of Pseudodirect Exciton Transition in GaAs/AlAs Type-II Superlattices" Symposium Record of 13th Symposium on Alloy Semiconductor Physics andElectronics. 113-115 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] M.Nakayama: "Biexciton Formation in GaAs/AlAs Type-II Superlattices under extremely Low Excitation Powers" Physical Review B. 51(in press). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] M.Nakayama: "GAMMA-X Mixing Effects on Photoluminescence Intensity in GaAs/AlAs Type-II Superlattices" Solid State Communications. 88. 43-46 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] M.Nakayama: "GAMMA-X Mixing Effects on Pseudodirect Exciton Transitions in GaAs/AlAs Type-II Superlattices" physical Review B. 49(in press). (1994)

    • Related Report
      1993 Annual Research Report

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Published: 1993-04-01   Modified: 2020-05-15  

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