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Studies on the Dynamical Properties of a-Si : H/a-Si3N4+x : H Interfaces by PLAS(Phptoluminescence Absorption Spectroscopy)

Research Project

Project/Area Number 05650011
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionGifu University

Principal Investigator

NITTA Shoji  Gifu University, Dept.Electronic & Comp., Prof., 工学部, 教授 (90021584)

Co-Investigator(Kenkyū-buntansha) ITOH Takashi  Gifu University, Dept.Electronic & Comp., Res.Assoc., 工学部, 助手 (00223157)
NONOMURA Shuichi  Gifu University, Dept.Electronic & Comp., Assoc.Prof., 工学部, 助教授 (80164721)
荻原 千聡  山口大学, 工学部, 助教授 (90233444)
Project Period (FY) 1993 – 1994
Project Status Completed (Fiscal Year 1994)
Budget Amount *help
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1994: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 1993: ¥1,300,000 (Direct Cost: ¥1,300,000)
Keywordsamorphous silicon a-Si : H / photoluminescence / PLAS / absorption coefficient / TICS / TEOS / a-Si3N4+x : H / a-SiO2 / アモルファス・シリコン / 光導波路 / シミュレーション / スパッタ金属 / ITO
Research Abstract

[a] . Experiments on PLAS with ultrathin a-Si : H were succeeded down to 500 A but it was impossible to get good absorption coefficients from PLAS with ultrathin a-Si : H less than 400 A.Several origins found to disturb the experiments include (1) . unevenness of substrates [about 2000 A], (2) . appearance of hillocks on Al films of PLAS structure and (3) . dependence of PLAS signals on clad layr thicknee which were found from simulation of PLAS experiments.
[b] . From simulation of electromagnetic waves in PLAS structures, the Goos-Hanchen effects appears effectively to thin core PLAS samples. In this case, clad layrs must be thick enough to confine electromagnetic waves in the clad-core-clad PLAS waveguide.
[c] . Using above results, a PLAS sample with a thin 400 A thick a-Si : H and thick a-Si3N4+x : H clad layrs was succeeded to measure good absorption coefficients.
[d] . Because absorption coefficients obtained by PLAS method are affected by the interfaces between clad and core layrs, it is possible to observe the electric field effect of PLAS signals by adding metallic elelctrode to outside surface of clad-core-clad-metal-substrate system. Experimentally the existence of the electric field effect on PLAS samples was found by adding an Al electrode.
[e] . To get a good absorption coefficients in PLAS measurement, it is very important to avoid the stray light which is not the waveguide mode. Ni-Cr, Ni and Cr metals are applied successfully as a metal used to destroy the stray light in clad-core-clad-metal-substrate PLAS sample, because these films could avoid hillocks which is one origin of the stray light and have smaller reflectivity. Therefore a new sputtering system was designed to obtain Ni-Cr, Ni and Cr films.
[f] . As new clad materials, TICS and TEOS are used as glow-discharge source gas successfully. Especially SiO2 made by TICS shows best clad layr compared former si3N4+x : H and SiO2 layrs.

Report

(3 results)
  • 1994 Annual Research Report   Final Research Report Summary
  • 1993 Annual Research Report
  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] S.Nitta et al.: "Studies of optical absorption coefficient a of a-Si:H by photoluminescence absorption spectroscopy" J.Non-Cryst.Solids. 164/166. 913-916 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nitta et al.: "Interface properties of a-Si:H/a-Si_3N_<4+X>and a-Si:H/SiO_2elucidated by PLAS and its improvement by the atomic hydrogen" J.Non-Cryst.Solids. 137/138. 1071-1074 (1991)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nonomura et al.: "Photothemal deflection spectroscopy of hydrogenated amorphous silicon at low energies and at low temperatures" Philosophical Magazine B. 69. 335-348 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Takeuchi et al.: "Optical Properties of random amorphous multilayers-Si:H/a-Si_3N_<4+x>" Solar Energy Materials and Solar Cells. 34. 439-447 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nitta et al.: "Optical Properties of random amorphous semiconductor multilayers" Optoelectronics-Devices and Technologies. 9. 355-366 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 仁田、野々村: "CPM,PDS,PLAS,PPES" 固体物理. 27. 928-930 (1992)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nitta, E.Nishimura, T.Minamide, T.Uchida and S.Nonomura: "Studies of optical absorption coefficient a of a-Si : H by photoluminescence absorption spectroscopy" J.Non-Cryst.Solids. Vol.164-166. (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nitta, H.Miyazima, M.Mukai, S.Nonomura, S.Q.Gu and P.C.Taylor: "Interface properties of a-Si : H/a-Si_3N_<4+X> and a-Si : H/SiO_2 elucidated by PLAS and its improvement by the atomic hydrogen." J.Non-Cryst. Solids. Vol.137-138. (1991)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nonomura, T.Nishiwaki, S.Kusakabe, E.Nishimura, T.Itoh and S.Nitta: "Optical absorption of high quality a-Si : H and a-Si_XN_<1-X> : H in the low energy region 0.43 eV to 1.5 eV by PDS." J.Non-Cryst. Solids. Vol.164-166. (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nonomura, T.Nishiwaki and S.Nitta: "Photothermal deflection spectroscopy of hydrogenated amorphous silicon at low energies and at at low temperatures." Philosophical Magazine B. Vol. 69, No.2. (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nonomura, T.Nishiwaki, E.Nishimura, S.Hasegawa, T.Itoh and S.Nitta: "Characterization of high quality a-S : H for solar cells at low energy and at low temperature by PDS." Solar Energy Materials and Solar Cells. Vol.34. (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Takeuchi, H.Hirose, S.Nitta, T.Itoh and S.Nonomura: "Optical Properties of random amorphous multilayrs -Si : H/a-Si_3N_<4+X>." Solar Energy Materials and Solar Cells. Vol.34. (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Hasegawa, T.Nishiwaki, H.Habuchi, S.Nitta and S.Nonomura: "Optical Energy Gap and Below Gap Optical Absorption of Fullerene Films measured by CPM and PDS." Fullerene Science and Technology. (in print). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nitta, H.Hirose, S.Takeuchi, T.Itoh and S.Nonomura: "Optical properties of random amorphous semiconductor multilayrs" Optoelectronics-Devices and Technologies. Vol.9, No.3 (September). (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nitta, H.Hirose, S.Takeuchi and S.Nonomura: "Anomalous optical properties of amorphous random multilayrs and its relation with the classical localization" Superlattices and Microstructures. (in print). (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] S.Nitta et al.: "Studies of optical absorption coefficient a of a-Si:H by photoluminescence" J.Non-Cryst.Solids. 164-166. 913-916 (1993)

    • Related Report
      1994 Annual Research Report
  • [Publications] S.Nitta: "Interface properties of a-Si:H/a-Si_3N_<4+x>and a-Si:H/SiO_2 elucidated by PLAS and its improvement by the atomic hydrogen" J.Non-Cryst.Solids. 137-138. 1071-1074 (1991)

    • Related Report
      1994 Annual Research Report
  • [Publications] S.Nonomura et al.: "Photothemal deflection spectroscopy of hydrogenated amorphous silicon at low energies and et low temperatures" Philosophical Magazine B. 69. 335-348 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] S.Takeuchi et al.: "Optical Properties of random amorphous multilayers -Si:H/a-Si_3N_<4+x>" Solar Energy Materials and Solar Cells. 34. 439-447 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] S.Nitta et al.: "Optical properties of random amorphous semiconductor multilayers" Optoelectronics-Devices and Technologies. 9. 355-366 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 仁田、野々村: "CPM,PDS,PLAS,PPES" 固体物理. 27. 928-930 (1992)

    • Related Report
      1994 Annual Research Report
  • [Publications] S.Nitta,E.Nishimura,T.Minamide,T.Uchida and S.Nonomura: "Studies of Optical Absorption Coefficients α of a-Si:H by photolumlnesconce Absorption Spectroscope" J.Non-Cryst.Solid. 164-166. 913-916 (1993)

    • Related Report
      1993 Annual Research Report
  • [Publications] S.Nonomura,T.Nishiwaki,S.Kusakabe,E.Nishimura,T.Itoh and S.Nitta: "Optical absorption of bigh quality a-Si:H and a-Six N_<-x>:H in the low evergy region 0.43eV〜1.5eV by PDS." J.Non-Cryst.Solid. 164-166. 359-362 (1993)

    • Related Report
      1993 Annual Research Report

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Published: 1993-04-01   Modified: 2016-04-21  

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