| Project/Area Number |
05650020
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | KANAZAWA INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
ISHII Makoto KANAZAWA INSTITUTE OF TECHNOLOGY,DEPARTMENT OF ENGINEERING,PROFESSOR, 工学部, 教授 (30222946)
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| Co-Investigator(Kenkyū-buntansha) |
TAKATA Shinzoh KANAZAWA INSTITUTE OF TECHNOLOGY,DEPARTMENT OF ENGINEERING,PROFESSOR, 工学部, 教授 (70064467)
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| Project Period (FY) |
1993 – 1994
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| Project Status |
Completed (Fiscal Year 1994)
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| Budget Amount *help |
¥2,400,000 (Direct Cost: ¥2,400,000)
Fiscal Year 1994: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1993: ¥1,100,000 (Direct Cost: ¥1,100,000)
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| Keywords | III-V Compound / Gallium Nitride / Chemical Vapor Deposition / Monomethylhydrazine / Reaction Process / Crystal Growth / Mass-spectra / X-ray Diffraction |
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| Research Abstract |
A quadrupole mass analyzer is for the first time used to study effective decomposition reactions of monomethylhydraine-trimethylgallium system in a growth chamber of low pressure chemical vapor deposition apparatus. It is found that the puroducts such as amine, methylamine, cyanogen and hydrocarbons, are effectively formed at a temperature as low as around 300ﾟC.The formation of methylamine and amine is available for growing nitride crystals, although The formation of cyanogen is not available.
GaN layrs grown on (001) GaAs substrates by low pressure chemical vapor deposition apparatus using monomethylhydraine-trimethylgallium in a hydrogen are examined. The substrate temperature were changed from 400 to 700ﾟC.X-ray diffractions show the c-axis-oriented growth of GaN crystals were dominant in the substrate temperature from 550 to 650ﾟC,and also show very weak intensities due to cubic GaN crystals. However, the only c-axis-oriented hexagonal GaN crystals are grown when GaN crystals are grown using the monomethylhydrazine-trimethylgallium source on an AlN or GaN buffer layr which is grown at lower temperature on (001) GaAs substrate.
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