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"Interface Controlled Heteroepitaxy of Ionic Crystals and Covalent Crystals Using Ionicity Control Layr"

Research Project

Project/Area Number 05650025
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 表面界面物性
Research InstitutionTokyo Institute of Technology

Principal Investigator

TSUTSUI Kazuo  Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and Engineering, Associate Professor, 大学院・総合理工学研究科, 助教授 (60188589)

Co-Investigator(Kenkyū-buntansha) KAWASAKI Koji  Tokyo Institute of Technology, Interdisciplinary Graduate School of Science and, 大学院・総合理工学研究科, 助手 (10234056)
古川 静二郎  東京工業大学, 大学院・総合理工学研究科, 教授 (60016318)
Project Period (FY) 1993 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1995: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1994: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1993: ¥1,200,000 (Direct Cost: ¥1,200,000)
Keywordsionicity / heteroepitaxy / interface control / CaF_2 / ZnSe / GaAs / フッ化物 / GaAs / 分子線エピタキシ- / II-VI族化合物 / IV-V族化合物 / SrF_2 / ヘテロ界面 / 半導体 / エピタキシャル成長
Research Abstract

Interface control of heteroepitaxy of very different materials was investigated from the viewpoints of ionicity of the composed materials and a concept of "ionicity control layr" in which large difference of the ionicity was accommodated by inserting a material having intermediated ionicity was proposed. In experiments in this project, GaAs/CaF_2 interface was employed and ZnSe was examined as the ionicity control layr.
The epitaxial temperature for SrF_2 film grown on ZnSe (100) was evaluated as 250゚C using MBE method. Many previous report concerning heteroepitaxy of fluorides on various semiconductor substrates were ordered in ionicity of substrate materials, including the result of this experiment. It was found that epitaxial temperature was decreased as difference of ionicity between epilayr and substrate became small.
Growth condition of a few nm ZnSe layr on CaF_2 (111) surface was optimized using RHEED and AFM.Based on these observation, GaAs layr was grown on the ZnSe layr, and the relation between crystallinity of the overgrown GaAs layr and the growth condition of the underlying ZnSe layr was observed. As a result, FWHM of X-ray rocking curve from the GaAs layr was reduced to about 50% compared with direct growth of GaAs on CaF_2 surface, when 1-5nm thick ZnSe was deposited on CaF_2 surface at 200゚C and was post annealed at 300゚C prior to the GaAs growth. AFM observation for initial stage of ZnSe growth on CaF_2 surface and GaAs growth on the ZnSe layr revealed that nucleation density of GaAs was increased on ZnSe surface compared with CaF_2 surface. It was speculated that this high density nucleation was contribute to the improvement of crystallinity of GaAs layr.

Report

(4 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • 1993 Annual Research Report
  • Research Products

    (9 results)

All Other

All Publications (9 results)

  • [Publications] M.M.Sarinanto,Y.Yamaguchi,K.Tsutsui: "ZnSe ionicity control layen inserted in GaAs/CaF_2 interface" Applied Surface Science. (出版予定). (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] モハンマッド・ムスタファ・サリナント,山口洋二,筒井一生: "GaAs/CaF_2界面へのZnSeバッファ層の導入効果" 第44回応用物理学会関係連合講演会予稿集. 294-294 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] モハンマッド・ムスタファ・サリナント,山口洋二,筒井一生: "GaAs/CaF_2界面へのZnSeバッファ層の導入によるGaAs層の結晶性向上" 第57回応用物理学会学術講演会予稿集. 248-248 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] モハンマッド・ムスタファ・サリナント,山口洋二,筒井一生: "CaF_2(111)向上へのZnSeのMBE成長" 第43回応用物理学会関係連合講演会予稿集. 315-315 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Mohammad Mustafa Sarinanto, Yoji Yamaguchi and Kazuo Tsutsui: ""ZnSe ionicity control layr inserted in GaAs/CaF_2 (111) interface"" Surface Sciences. (to be published in Applied). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] モハンマッド・ムスタファ・サリナント,筒井一生: "CaF_2(111)表面上へのZnSe薄膜のMBE成長" 第25回応用物理学会学術講演会予稿集. 1. 280-280 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] モハンマッド・ムスタファ・サリナント,筒井 一生: "ZnSe(100)上へのSrF_2エピタキシャル成長における前処理依存性" 第55回応用物理学会学術講演会予稿集. 1. 173-173 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] モハンマッド・ムスタファ・サリナント,筒井 一生: "ZnSe(100)上へのSrF_2エピタキシャル成長" 第41回応用物理学関係連合講演会予稿集. 1. 305-305 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] モハンマッド・ムスタファ・サリナント,筒井一生: "ZnSe(100)上へのSrF_2エピタキシャル成長" 第41回応用物理学関係連合講演会予稿集. (発表予定). (1994)

    • Related Report
      1993 Annual Research Report

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Published: 1993-04-01   Modified: 2016-04-21  

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