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Frictional Properties of Micromechatoronics Elements

Research Project

Project/Area Number 05650289
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionAKITA UNIVERSITY

Principal Investigator

YOSHIMURA Noboru  AKITA University, Department of Electrical and Electronic Engineering, Professor, 鉱山学部, 教授 (60006674)

Co-Investigator(Kenkyū-buntansha) SUZUKI Masafumi  AKITA University, Department of Electrical and Electronic Enginneering, Lecturer, 鉱山学部, 講師 (60226553)
Project Period (FY) 1993 – 1994
Project Status Completed (Fiscal Year 1994)
Budget Amount *help
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1994: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 1993: ¥1,500,000 (Direct Cost: ¥1,500,000)
KeywordsFriction Coefficient / Thin Film / Electrostatic Force / Micromachine / 薄膜材料 / 静止摩擦係数
Research Abstract

Silicon wafer is often used for a micromachine because of its excellent mechanical characteristics. However, silicon shows a large adhesive force at a high temperature, so it is predicted that a movement of micromachine would get worse with increase of a temperature. Therefore, it is necessary to understand the effect of the temperature on static friction for silicon wafer and it is also necessary to reduce an adhesive force at a high temperature.
In the present study, static friction coefficients of silicon wafer against silicon wafer, SiO_2 and Al thin films were measured by using a milimeter sized mover at the temperature from 20゚C to 200゚C.We also measured an adhesive forces of silicon wafer against silicon wafer, SiO_2 and Al thin films with increasing a temperature.13EA03 : It was found that the static friction coefficient of silicon wafer against silicon wafer was increased with the increase of the temperature. This caused by the increase of the adhesive force between silicon wafers. However, if we depositted an SiO_2 and Al thin films on the surface of a silicon wafer with the thickness over 100nm, the frictional force did not vary with the temperature and those showed an almost constant small value.

Report

(3 results)
  • 1994 Annual Research Report   Final Research Report Summary
  • 1993 Annual Research Report
  • Research Products

    (15 results)

All Other

All Publications (15 results)

  • [Publications] Masafumi Suzuki: "The Measurement of Friction Coefficient For Various Thin Films Using Mellimeter-Size Movers Driven by Electrostafic Force" Proceedings of the 2nd International Conference Applied Electrostatics. 417-421 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 渡辺 茂: "シリコンウェーハ間の静摩擦特性に対する温度の影響" 電気学会論文誌A. 114-A. 168-172 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Masafumi Suzuki: "The Measurement of Friction Coefficient Among Silicon Wafer Sio_2and Al Thin Films" 2nd International Conference on Materials Engineering for Resources. 21-22 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 鈴木 雅史: "静電駆動型微小ム-バを用いたシリコンウェーハの摩擦計測" 静電気学会講演論文集. 179-180 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 田 政: "動摩擦過程中の静電力及び動摩擦係数に対する影響" 静電気学会講演論文集. 181-182 (1993)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] 鈴木 雅史: "静電駆動型微小ム-バを用いた薄膜材料の摩擦計測" 日本機械学会「電磁力シンポジュウム研究会資料. (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Masafumi SUZUKI,Shigeru WATAMABE,Noburo YOSHIMUA and Hiriyuki FUJITA: "The Measurement of Friction Coefficient for Various Thin Films Using Millimeter-size Movers Driven by Electrostatic Froce" Proceedings of the 2nd Internationalll Conference Applied Electrostatics. 417-421 (1993)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Shigeru WATANABE,Masafumi SUZUKI,Noboru YOSHIMUA and Hiriyuki FUJITA: "Effect of Temperature on Static Friction Characteristics for Silicon wafer/Silicon wafer contact" IEE JAPAN. 168-172 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Masafumi SUZUKI,Shigeru WATANABE,Noboru YOSHIMUA and Hiriyuki FUJITA: "The Measurement of Friction Coefficient Among Silicon Wafer SiO_2 and Al Thin Films" 2nd International Conference on Materials Engineering for Resources. 21-22 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1994 Final Research Report Summary
  • [Publications] Masafumi Suzuki: "The Measurement of Friction Coefficient for Various Thin Films" Proc.of the 2nd Int. Conference Applied Electrostatics. 417-421 (1993)

    • Related Report
      1994 Annual Research Report
  • [Publications] 渡辺 茂: "シリコンウェーハ間の静摩擦特性に対する温度の影響" 電気学会論文誌A. 114-A. 168-172 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Masafumi Suzuki: "The Measurement of Friction Coefficient Among Silicon Wafer SiO_2and Al" 2nd Int.Conf.on Materials Engineering for Resources. 21-22 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 鈴木 雅史: "静電気駆動型微小ム-バを用いたシリコンウェーハの摩擦計測" 静電学会講演論文集. 179-180 (1993)

    • Related Report
      1994 Annual Research Report
  • [Publications] 田政: "動摩擦過程中の静電力及び動摩擦係数に対する影響" 静電学会講演論文集. 181-182 (1993)

    • Related Report
      1994 Annual Research Report
  • [Publications] 鈴木雅史: "静電駆動型微小ム-バを用いた薄膜材料の摩擦計測" 日本機械学会「電磁力シンポジュウム研究会資料. (1994)

    • Related Report
      1994 Annual Research Report

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Published: 1993-04-01   Modified: 2016-04-21  

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