CVD Growth of Oxide Ferroelectric Thin Films and Control of Their Properties Using Photo Energy
| Project/Area Number |
05650302
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | KYOTO UNIVERSITY |
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Principal Investigator |
SHIMIZU Masaru Kyoto Univ.Fac.of Eng.Research Associate, 工学部, 助手 (30154305)
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| Project Period (FY) |
1993 – 1994
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| Project Status |
Completed (Fiscal Year 1994)
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| Budget Amount *help |
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1994: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 1993: ¥1,200,000 (Direct Cost: ¥1,200,000)
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| Keywords | Photo-MOCVD / ferroelectric film / PZT thin film / film composition / perovskite / NO_2 / O_3 / characteristic control / 光励起MOCVD法 / メモリ特性 / リ-ク電流 / オゾン / 疲労特性 / 光MOCVD / リーク特性 / バッファ層 / 二段階成長 / トリエチルn-ペントキシ鉛 |
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| Research Abstract |
Ferroelectric Pb (Zr, Ti) O_3 (PZT) thin films were successfully grown by photoenhanced metalorganic chemical vapor deposition (photo-MOCVD) . Significant effects of photoirradiation on the growth behavior were observed. The observed effects included an increase in the film composition ratio of Zr/ (Zr+Ti) and a change in the electrical properties. These experimental results means that precise control of film composition and electrical properties could be achieved by photoirradiation. The growth temperature of perovskite Pb (Zr, Ti) O_3 films grown using NO_2 as on oxidizing gas was lower than when O_2 was used as an oxidizing gas.
In the growth of PZT thin films by photo-MOCVD,an improvement in the breakdown voltage by the use of O_3 as an oxidizing gas and photoirradiation was also observed.
From our experimental results, it was found that the growth behavior and electrical characteristics of PZT films could be controlled by photoirradiation.
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Report
(3 results)
Research Products
(25 results)
