Establishment of Film-Formation Method by lonization in TEOS-CVD Process
| Project/Area Number |
05650769
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
反応・分離工学
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| Research Institution | University of Osaka Prefecture |
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Principal Investigator |
ADACHI Motoaki University of Osaka Prefecture, Research Institute for Advanced Science and Technology, Assistant Professor, 附属研究所, 講師 (40100177)
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| Co-Investigator(Kenkyū-buntansha) |
OKUYAMA Kikuo Hiroshima University, College of Engineering, Professor, 工学部, 教授 (00101197)
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| Project Period (FY) |
1993 – 1994
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| Project Status |
Completed (Fiscal Year 1994)
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| Budget Amount *help |
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 1994: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1993: ¥1,100,000 (Direct Cost: ¥1,100,000)
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| Keywords | CVD / Thin film / Ion-molecule reaction / Ion-induced nucleation / TEOS / Cluster ion / Nanometer-sized particle / Selective growth / ナノサイズ超微粒 / TE0S / ナノ超微粒子 |
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| Research Abstract |
A new chemical vapor deposition (CVD) method named for an ionization CVD,where source molecules were ionized and deposited by electrophoresis, was proposed to develop a particle-free CVD process. Tetraethylorthosilicate (TEOS)/ozone system was used to certify the film formation by the ionization CVD method. The ionization CVD reactor for TEOS/O_3 system was built up, and the size distribution and charges of particles generated in the reactor were measured simultaneously to improve the reactor. As the results, 90% of nanometer-sized particles generated in the reactor had a negative charge, Film growth rates increased linearly with the electric intensity. It was certified from this results that the ionization CVD method can form the thin film. The FT-IR spectra of the films showed the the structure was an SIO_2 containing very small amount of a hydroxyl group, that is, a good quality film. From the results of compositional analysis of nanometer-sized particles and SEM observation of resultant films on the trenched Si substrates, the intermediate species which form films with excellent flow-like shape were found to contain relatively large amounts of ethoxy group and small amounts of hydroxyl group.
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Report
(3 results)
Research Products
(8 results)
