| Project/Area Number |
05805009
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Materials/Mechanics of materials
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| Research Institution | Tohoku University |
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Principal Investigator |
ABE Hiroyuki Tohoku University, Faculty of Engineering, Professor, 工学部, 教授 (00005266)
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| Co-Investigator(Kenkyū-buntansha) |
SAKA Masumi Tohoku University, Faculty of Engineering, Professor, 工学部, 教授 (20158918)
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| Project Period (FY) |
1993 – 1994
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| Project Status |
Completed (Fiscal Year 1994)
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| Budget Amount *help |
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 1994: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1993: ¥1,500,000 (Direct Cost: ¥1,500,000)
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| Keywords | Thin Film / Nucleation / Diamond / Silicon / Ultrasonics / Adhesion / Electronic Device / Nondestructive Evaluation |
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| Research Abstract |
Micromechanics and nondestructive evaluation of the adhesion of the thin film have been investigated. The main results obtained are summarized as follows :
1. The effect of the adhesive strength of the diamond film to the silicon substrate on the wave transmission has been examined by using ultrasonic angle beam technique. Specimens with different values of the adhesive strength have been prepared by controlling the nucleation density and offered for the ultrasonic testing. It has been found that the amplitude of the spectrum transformed from the transmitted wave takes higher value with increasing adhesive strength.
2 Numerical simulation of the nucleation of the diamond on the silicon substrate by the CVD method has been conducted. A two-dimensional nucleation model that consists of a pretreated silicon substrate and reaction gas has been proposed. The model has been verified by performing numerical simulation of the nucleation.
3. Numerical simulation of forming of the diamond thin film on the silicon substrate by the CVD method has been conducted. The process of forming of the diamond thin film has been shown by developing the model proposed in 2.
4. In order to calculate adhesive strength of the diamond thin film to the silicon substrate, numerical calculation has been conducted using the model proposed in 3. It has been shown that the adhesive force as the true adhesive strength increases with increasing the number of the points of the nucleation.
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