| Project/Area Number |
06044059
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| Research Category |
Grant-in-Aid for international Scientific Research
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| Allocation Type | Single-year Grants |
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| Section | Joint Research |
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| Research Institution | University of Tokyo |
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Principal Investigator |
SUGA Tadatomo (1996) Research Center for Advanced Science and Technology, University of Tokyo, Professor, 先端科学技術研究センター, 教授 (40175401)
石田 洋一 (1994-1995) 東京大学, 大学院・工学系研究科, 教授 (60013108)
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| Co-Investigator(Kenkyū-buntansha) |
KOYAMA Masanori Government Industrial Research Insitute, Osaka. Chef. Researcher, 大阪工業技術試験所・ガラスセラミックス材料部, 主任研究官
OHUCHI Fumio University of Washington, Dept.of Materials Science and Engineering, Professor, 教授
ITOH Toshihiro Research Center for Advanced Science and Technology, University of Tokyo, Lectur, 先端科学技術研究センター, 講師 (80262111)
須賀 唯知 東京大学, 先端科学技術研究センター, 教授 (40175401)
S Ohuchi Fum Dept. of Materials Science and Engineerin, 教授
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| Project Period (FY) |
1994 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 1996: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1995: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1994: ¥1,300,000 (Direct Cost: ¥1,300,000)
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| Keywords | SiC-Al interface / first-principle molecular dynamics method / electronic structure / adhesive energy / electron microscopy / deformation / ceramic-metal interfaces / sapphire-Al interface / 原子間力顕微鏡 / セラミックス / 界面 / 原子構造 / バンド計算 / カーボンナノチューブ |
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| Research Abstract |
Adhesive energies and atomic/electronic structure of metal to ceramic interfaces have been investigated by using the first principle molecular dynamics method based on the density-function theory. This investigation have been conducted through the tight collaboration between Prof.Ohuchi and Dr.Kohyama. The most important finding of the research was that in case of SiC (110) and SiC (100) and Al bonding, there is a strong attractive C-Al interactions with both ionic and covalent characters in the bonded interface, which are considered to play a favorable role in adhesion between SiC and Al. These theoretical results are confirmed by the bonding experiments conducted by Prof.Suga. By means of the surface activated bonding method, he has succeeded in bonding ceramic-metal system at room temperature. TEM study on the microstructure of the bonded interfaces, which has been continued since the last year, showed that a direct bonding of such ceramic-metal interface is formed actually only by contact between such clean surfaces. However, a closer observation of the bonded interface between Al2O3 and Al using the high resolution TEM showed that there is a strong distorted region of several nm thickness which possesses another structure which is different from both Al2O3 and Al. Formtion of such thin intermediate layr was interpreted as a result of strong deformation of the interfaces in contac that would lead to compensate the lattice mismatch. There results have been analyzed and complied for further development of interface engineering, and published in several international conferences. Also possibilities of these findings in application of the packaging technology in the near future has been discussed with fairly good expectations.
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