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半導体量子位相デバイス

Research Project

Project/Area Number 06238104
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Research InstitutionTokyo Institute of Technology

Principal Investigator

古屋 一仁  東京工業大学, 工学部, 教授 (40092572)

Co-Investigator(Kenkyū-buntansha) 奥村 次徳  東京都立大学, 工学部, 教授 (00117699)
蒲生 健次  大阪大学, 基礎工学部, 教授 (70029445)
榊 裕之  東京大学, 先端科学技術研究センター, 教授 (90013226)
平本 俊郎  東京大学, 生産技術研究所, 助教授 (20192718)
生駒 俊明  テキサスインスツルメント, 研究員
Project Period (FY) 1994 – 1996
Project Status Completed (Fiscal Year 1996)
Budget Amount *help
¥165,600,000 (Direct Cost: ¥165,600,000)
Fiscal Year 1996: ¥19,900,000 (Direct Cost: ¥19,900,000)
Fiscal Year 1995: ¥65,800,000 (Direct Cost: ¥65,800,000)
Fiscal Year 1994: ¥79,900,000 (Direct Cost: ¥79,900,000)
Keywords電子波回折 / 走査ホットエレクトロン顕微鏡 / シリコン量子構造 / T字形量子細線 / 一次元励起子 / InAs量子箱 / 集束イオンビーム注入 / 電解液中STM / 電子波コヒーレンス長 / エッジ量子細線 / Si量子細線 / 細線MOSFET / クーロンブロッケード振動 / 共鳴トンネルダイオード / コヒーレンス長 / 電子波方向性結合デバイス / 金属ショットキーゲート / 電気化学走査型トンネル顕微鏡 / ドライエッチング
Research Abstract

GalnAsOMVPEにより三重バリア電子波共振器を作製し共鳴エネルギー幅測定からバリスティック電子のコヒーレンス長推定方法を研究し、電子ビーム描画により回折観測用超微埋め込みスリットを作製し電子波回折観測を行い、走査ホットエレクトロン顕微鏡動作に初めて成功した(古屋)。VLSIプロセスと互換性をもつシリコン異方性エッチングにより、リソグラフィ限界を越える微細なT字、十字および単一ドット構造を作製し、シリコン量子デバイスとVLSIとの集積化の基礎を固めた(生駒)。同プロセスを用いて極微細MOSFETを作製し、室温および低温での単一電子現象を観測し、理論的考察から、チャネルが複数のドットに分裂し、熱励起型ホッピング伝導が支配的であることを明らかに、室温動作シリコン量子デバイス実現を一歩近づけた(平本)。へき開量子井戸構造端面(エッジ)上に量子井戸を成長させて交叉部にT字形量子細線を形成し、一次元励起子束縛エネルギーの増大、偏波依存性を見出し、自己形成InAs量子箱トラップを有するGaAs/AlGaAsヘテロFETを作製し単一電子正孔捕縛を観測した(榊)。真空一貫プロセス埋め込み量子構造作製をめざし結晶成長中断条件把握と低エネルギーFIBその場注入およびMBE再成長によりGaAs埋め込みデルタドープ層形成に成功し、ホールおよびCV測定により高移動度の電子系形成を確認した(蒲生)。電界液中でSTMを用いて、n-GaAs表面に対して、局所的なエッチングおよび金属折出を行い、表面酸化状態、不純物濃度および基板電位依存性を明らかにし、エッチングメカニズムが探針からのホール注入によることを明らかにした(奥村)。

Report

(3 results)
  • 1996 Annual Research Report
  • 1995 Annual Research Report
  • 1994 Annual Research Report
  • Research Products

    (53 results)

All Other

All Publications (53 results)

  • [Publications] F.Vazquez,K.Furuya and D.Kobayashi: "Detecting subsurface hot electrons with a scanning probe microscopy" J.Appl.Phys.79・2. 651-655 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Hongo,H.Tanaka,Y.Miyamoto,J.Yoshinaga,and K.Furuya: "Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs" Jpn.J.Appl.Phys.35・8A. L964〜L967 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] F.Vazquez,D.Kobayashi,I.Kobayashi,Y.Miyamoto,K.Furuya,et.al.: "Detection of hot electron current with scanning hot electron microscopy" Appl.Phys.Lett.69・15. 2196-2198 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] R.Takemura,M.Suhara,Y.Miyamoto,K.Furuya,and Y.Nakamura: "Current-voltage characteristics of triple-barrier resonant tunneling diodes including coherent and incoherent tunneling process" IEICE of Jpn.E-79C・11. 1525-1529 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Hongo,T.Hattori,Y.Miyamoto.K.Furuya,K.Matsunuma,et.al.: "Seventy nm pitch patterning on CaF2 by e-beam exposure:An inorganic resist and a contamination resist" Jpn.J.Appl.Phys.35・12. 6342-6343 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Ishikuro,T.Saraya,T.Hiramoto,and T.Ikoma: "Extremely Large Amplitude Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures" Japanese Journal of Applied Physics. 35・2B. 858-860 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] F.Wakaya,J.Takahara,S.Takaoka,K.Murase and K.Gamo: "Confinement Potential in an Asymmetrically Biased Quantum Point Contact" Jpn.J.Appl.Phys.35. 1329-1332 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] F.Wakaya,T,Matsubara,H.Nakayama,J.Yanagisawa,Y.Yuba,S.Takaoka,K.Gamo: "Effects of grwth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structures" Physica B. 227. 268-270 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] J.Yanagisawa,H.Nakayama,F.Wakaya,Y.Yuba and K.Gamo: "Fabrication of Laterally Seiected Si Doped Layer in GaAs Using a Low-Energy Focused Ion Beam/Molecular Beam Epitaxy Combined System" to be published in J.Vac.Scl.Technol.B.

    • Related Report
      1996 Annual Research Report
  • [Publications] J.Yanagisawa,N.Onishi,H.Nakayama and K.Gamo: "Characterization of Directly Deposited Sillcon Films Using Low-Energy Focused Ion Beam" to be piblished in Jpn.J.Appl.Phys.19GA11:J.Yanagisawa,H.Nakayama,O.Matsuda,K.Murase and K.Gamo.

    • Related Report
      1996 Annual Research Report
  • [Publications] "Direct Deposition of Silicon and Silicon-Oxide Films Using Low-Energy Si Focused Ion Beam" to be published in Nucl.Instr.Methods B.

    • Related Report
      1996 Annual Research Report
  • [Publications] C.Kaneshiro,T.Okumura: "Nanofabrication on n-GaAs Surface by Scanning Tunneling Microscope in Ni-Salt Solution" Thin Solid Films. 281. 606-609 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Ishikuro,T.Fujii,T.Saraya,G.Hashiguchi,T.Hiramoto,T.Ikoma: "Coulomb Blockade Oscillations at Room Temperature in a Si Quantum Wire MOSFET Fabricated by Anisotropic Etching on a SIMOX Substrate" Applied Physics Letters. 68・25. 3585-3587 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Hiramoto,H.Ishikuro,T.Fujii,T.Saraya,G.Hashiguchi,T.Ikoma: "Characterization of Precisely Width-Controlled Si Quantum Wires Fabricated on SOI Substrates" Physics B. 227. 95-97 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Hiramoto,H.Ishikuro,K.Saito,T.Fujii,T.Saraya,G.Hashiguchi,T.Ikoma: "Fabirication of Si Nano-Structures for Single Electrom Device Applications by Anisotropic Etching" Japanese Journal of Applied Physics. 35・12B. 6664-6667 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Someya,H.Akiyama,and H.Sakaki: "Enhanced Binding Energy of One-Dimensional Excitons in Quantum Wires" Physical Revew Letters. 76・16. 2965-2968 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Akiyama,T.Someya,and H.Sakaki: "Dimensional crossover and confinement-induced optical anisotropy in GaAs T-shaped quantum wires" Physical Review B. 53・16. 520-523 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] G.Yusa and H.Sakaki: "Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structu" Applied.Physics.Letters.(to be published).

    • Related Report
      1996 Annual Research Report
  • [Publications] C.Kaneshiro,T.Okumura: "Fabrication of Mesoscopic Structures on n-GaAs Surfaces by Electro-chemical Scanning Electron Microscope" Phsica B. 227. 271-275 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y. C. Kang, M. Suhara, K. Furuya and R. Koizumi,: "“Evaluation of hot electron coherentlength using well width dependence of the resonancecharacteristics of resonant tunneling diodes"" Jpn. J. Appl. Phys.34. 4417-4419 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] H. Hongo, J. Suziki, M. Suhara, Y. Miyamoto, and K. Furuya,: "“Nanostructurealignment for hot electron interferebce/diffraction devices"" Jpn. J. Appl. Phys.34. 4436-4438 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] M. Suhara, R. Takemura and K. Furuya: "“Possibility of high-temperatureevaluation of phase coherentlength of hot electrons in triple-barrierresonant tunneling diodes"" Jpn. J. Appl. Phys.34. 4452-4454 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] T. Ikoma, T. Hiramoto, and K.Hirakawa,: "“Gap between Microelectronics and Nanoelectronics"" to be published in Inst. Physics Conference Series.(1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] H. Ishikuro, T. Saraya, T. Hiramoto, and T. Ikoma: "“Extremely Large Amplitude of Random Telegram Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures"" 342-345 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] T. Hiramoto, H. Ishikuro, T. Fuji,T. Saraya, G. Hashiguchi, and T. Ikoma: "“Characterization of Precisely Width-Controlled Si Quantum Wires Fabricated on SOI substrates"" 3rd International Symposium onNew Phenomena in Mesoscopic Structures, Maui, Hawaii. 296-299 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] H. Ishikuro, T. Saraya, T. Hiramoto, and T. Ikoma: "“Extremely Large Amplitude Random Telegraph Signals in a Very Narrow Split-Gate MOSFET at Low Temperatures"" to be published in Japanese Journal of Applied Physics.(1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] T. Hiramoto, H. Ishikuro, T. Fuji,T. Saraya, G. Hashiguchi, and T.Ikom: "“Characterization of Precisely Width-Controlled Si Quantum Wires Fabricated on SOI substrates"" to be published in Physics B.(1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] T.Hiramoto(Invited): "“Future Trend of Scaled LSI Devices and Single Electronics"" Proceedings of 1995 International Semiconductor Device Research Symposium, Charlottesville, USA. 801 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] T. Someya, H. Akiyama, and H. Sakai: "Laterally squeezed excitonic wave function in quantum wires," Phys. Rev. Lett.74. 36645 (1994)

    • Related Report
      1995 Annual Research Report
  • [Publications] T. Someya, H. Akiyama,and H. Sakai: "Spatially resolved photoluminescence study on T-shaped quantum wires,fabricated by cleavededgeovergrowth method," J. Appl. Phys.74. 3664 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] H. Akiyama, T. Someya, and H. Sakai: "Optical anisotropy in 5nm-scale T-shaped Quantum Wires Fabricated by CleavedEdgeOvergrowth Method," to be published in Phys. Rev. B.(1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] M. Yamauchi, Y. Nakamura, Y. Kadoya, H. Sugawara, and H. Sakai: "Electronic states in edgequantum wires on GaAS/AlGaAs facet structures" to be published in Jpn. J. Appl. Phys.(1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] J. Yanagisawa, H. Nakayama, F. Wakaya, Y. Yuba, and K. Gamo: "“Formation of Buried Two-Dimensional Electron Gas in GaAs by Si Ion Doping Using MBE-FIB Combined System"" to be published in Mat. Res. Soc. Symp. Proc.(1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] F. Wakaya, T. Matsubara, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase and K. Gamo: "“Investigation of the growth interruption in the UHV total vacuum process for the buried quantum structures" to be published in Microelectronic Engineering.(1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] F. Wakaya, T. Matsubara, H. Nakayama, J. Yanagisawa, Y. Yuba, S. Takaoka, K. Murase and K. Gamo: "“Effects of grwth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structures"" submitted to Physica B. (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] T. Okumura, C. Kaneshiro, M. Shimura, and S. -I. Yamamoto,: "Photoelectrochemical Process for Fabrication of Abrupt Metal-GaAs Interfaces" Electrochemical Microfabrication,ECS Proceedings,. Vol. 94-32,. 374-389 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] C.Kaneshiro,T.Okumura: "“Nanofabrication on n-GaAs Surface by Scanning Tunneling Microscope in Ni-salt Solution,"" 13th International vacuum Congress,9th International Conf. on Solid Surfaces, Yokohama. (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Chinami Kaneshiro, Tsugunori Okumura,: "Structures on n-GaAs Surfaces by Electrochemical Scanning Electron Microscope" 3rd International Symp. New Phenomena in Mesoscopic Structures,Hawaii23GE19:1995.

    • Related Report
      1995 Annual Research Report
  • [Publications] H.Hongo,Y.Miyamoto,J.Suzuki M.Funayama,T.Motrita and K.Furuva: "Ultrafine fabrication techniquefor hot electron interference/diffraction devices" Jpn.J.Appl.Phys.33. 925-928 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Furuya,N.Machida and Y.C.Kang: "Analysis of phase breaking effect in resonant tunneling diodes using correlation function" Jpn.J.Appl.Phys.33. 2511-2512 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Y.C.Kang,K.Furuya,M.Suhara and Y.Miyamoto: "Estimation of phase coherent length of hot electrons in GalnAs using resonant tunneling diodes" Jpn.J.Appl.Phys.33. 6491-6495 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] T.Saito,Y.Hashimoto and T.Ikoma: "Band discontinuity in GaAs/AlAs superlattices with InAs strained insertionlayers" The 7th International Conference on Superlattices,Microstructures and Microdevices. (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Y.Hashimoto,N.Sakamoto,K.Agawa,T.Saito and T.Ikoma: "Artificial control of heterojunction band discontinuities by two delta dopings" 21st International Symposium on Compound Semiconductors. (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Y.Nakamura,M.Tsuchiya,S.Koshiba,H.Noge and H.Sakaki: "Modukation of one-dimensional electron density in n-AlGaAs/GaAs edge quanm wiretransistor" Appl.Phys.Lett. 64(19). (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] S.Koshiba,H.Noge H.Ichinose,H.Aklyama,Y.Nakamura,T.Nakamura T.Inoshita,T.Someya,K.Wada,A.Shimizu and H.Sakaki: "MBE growth of GaAs nanometer-scale ridge quantum wire structures and their structural and optical characterizations" Soild-State Electronics. 37. 729-732 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Y.Ohno and H.Sakaki: "Quenching of resonance-induced resistance in double-quantum wells in the presence of in-plane magnetic fields" Physical Review B. 49. 49 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] F.Wakaya,K.Umeda,J.Yanagisawa,Y.Yuba,S.Takaoka,K.Murase and K.Gamo: "Investigation of in situ process for GaAs/AlGaAs byried quantum wires" Jpn.J.Appl.Phys.33. 7223-7227 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] J.Takhara,Y.Ochiai,S.Matsui,S.Takaoka,K.Murase and K.Gamo: "Fabrication and Magnetotransport of one-dimensional lateral surface superlattice fabricated by low-energy ion irradiation" Jpn.J.Appl.Phys.33. 7184-7189 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] C.Kaneshiro,M.Shimura and T.Okumura: "Electrical Abruptness of Ni/GaAs interfaces fabricated by in situ photoelectrochemical process" Control of Semiconductor Interfaces(Elsevier,Amsterdam). 181-186 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] T.Okumura,C.Kaneshiro,M.Shimura,S-l.Yamamoto: "Photoelectrochemical process for fabrication of abrupt metal-GaAs irterfaces" Extended abstruct of 186th ECS meeting Miami Beach. 94-2. 54-549 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Kudo,Y.Nagashima M.Tamura,S.Tamura A.Ubukata and S.Arai: "Fabrication of GalnAs/GalnAsP/lnP multi-quantum-wires and-boxes by substratepotential-controlled electron cyclotron resonance reactive ion beam etching" Jpn.J.Appl.Phys. 33. 1383-1385 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] M.Tamura,Y.Nagashima K.C.Shin,S.Tamura A.Ubukata and S.Arai: "Investigation of surface damage in GalnAs/GalnAsP/lnP wire structures by lowenergy-reactive-ion assisted radical etching" The 12th int.conf.on Solid State Devices and Materials. 199-201 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] T.Takizawa,S.Arai and M.Nakahara: "Fabrication of vertical and uniform-size porous lnP structure by electrochemical anodization" Jpn.J.Appl.Phys.33. 643-645 (1994)

    • Related Report
      1994 Annual Research Report

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Published: 1994-04-01   Modified: 2016-04-21  

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