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Physics of Hetero-Epitaxial Growth onto the hydrogen terminated Si surface under the low temperature condition

Research Project

Project/Area Number 06402025
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field 表面界面物性
Research InstitutionOsaka University

Principal Investigator

OURA Kenjiro  Osaka University, Dept.of Eng., Professor, 工学部, 教授 (60029288)

Co-Investigator(Kenkyū-buntansha) WATAMORI Michio  Osaka University, Dept.of Eng., Research Associate, 工学部, 助手 (80222412)
UEDA Kazuyuki  Osaka University, Dept.of Eng. (Toyota Inst.of Tech.), Professor, 工学部, 教授 (60029212)
Project Period (FY) 1994 – 1996
Project Status Completed (Fiscal Year 1996)
Budget Amount *help
¥35,800,000 (Direct Cost: ¥35,800,000)
Fiscal Year 1996: ¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 1995: ¥6,200,000 (Direct Cost: ¥6,200,000)
Fiscal Year 1994: ¥27,300,000 (Direct Cost: ¥27,300,000)
KeywordsSurface Hydrogen / Ion beam analysis / STM / Epitaxy / metal / Si interface / エピタキシ-
Research Abstract

We have reported that epitaxial growth mode of thin metallic films on the Hydrogen-terminated Si surfaces were slightly different from that on the clean Si surfaces. Our subject on this research project supported by a Grant-in-Aid for Scientific Research is to clarify or to get a key to understand the mechanism of the role of Hydrogen to thin film growth. We observed the phenomena atomically with use of newly introduced scanning tunneling microscopy (STM). The new findings are as follows.
(1) To get the information of role of substrate temperature for the hydrogen termination onto the Si surfaces, we performed the low temperature experiments by a high energy ion beam method. At low temperature of about 100K,Hydrogen plays a role of etching source for the Si surfaces rather than preventive source of the Si surfaces. As a result, good epitaxial thin films could not be obtained under the condition of low temperature adsorption.
(2) Initial stage of 2-dimensional superlattice induced by specific materials such as Ag, Pb and In changes to 3-dimensional intrinsic cluster growth after the Hydrogen termination.
(3) Through the change of 3-dimensional clusters from the 2-dimensional superlattices, bare Si areas are produced, where Si atoms form structures of 1-dimensional, 2-dimensional or and so on depending the initial 2-dimensional super lattice structures.
These results cause the key of better understanding of modification of hetero-epitaxy by the Hydrogen termination.

Report

(4 results)
  • 1996 Annual Research Report   Final Research Report Summary
  • 1995 Annual Research Report
  • 1994 Annual Research Report
  • Research Products

    (30 results)

All Other

All Publications (30 results)

  • [Publications] M. Watamori他4名: "Low Temperature Adsorption of Hydrogen on Si(III) and (100) Surface Studied by Flastic Pecool Detection Analysis" Applied Surface Sicence. 82/83. 417-421 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K. Ueda: "Behavior of Hydrogen and Oxygen on Cleamed Silicon Surfaces" Japan Journal of Applied Physics. 33. 1524-1527 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H. Ohnishi他4名: "Scanning Tunneling Microscopy Observations of Hydrogen-Induced Ag Cluster Formation on the Si (III) Surfaces" Journal of Vacuum, Science & Technology. A13. 1438-1442 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K. Murano他1名: "Surfactant Effect of Hydrogen for Nickel Growth on Si (III) 7×7 Surface" Surface Science. 357-358. 910-916 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K. Oura他4名: "Atomic-Hydrogen-Induced Ag Cluster Formation on Si (III)-√3×√3-Ag Surface Observed by Scanning Tunnoling Microscopy" Journal of Vacuum, Science & Technology. B14. 988-991 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K. Ueda: "Elector-Stimulated Desorption Study of an Atomic Hydrogen-absorbed FZ-Si (100) Surface" Surface Science. 363. 337-341 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Watamori et.al.: "Low Temperature Adsorption of Hydrogen on Si (111) and (100) Surfaces Studied by Elastic Recoil Detection Analysis" Applied Surface Science. 82/83. 417-421 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Ueda: "Behavior of Hydrogen and Oxygen on Cleaned Silicon Surface" Japan Journal of Applied Physics. 33. 1524-1527 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Ohnishi et.al.: "Scanning Tunneling Microscopy Observations of Hydrogen-Induced Ag Cluster Formation on the Si (111) Surfaces" Journal of Vacuum, Science and Technology. A13. 1438-1442 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Murano and K.Ueda: "Surfactant Effect of Hydrogen for Nickel Growth on Si (111) 7*7 Surface" Surface Science. 357-358. 910-916 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Oura et.al.: "Atomic-Hydrogen-Induced Ag Cluster Formation on Si (111) -ROO< 3>*ROO< 3>-Ag Surface Observed by Scanning Tunneling Microscopy" Journal of Vacuum, Science and Technology. B14. 988-991 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Ueda: "Electron-Stimulated Desorption Study of an Atomic Hydrogen-Adsorbed FZ-Si (100) Surface" Surface Science. 363. 337-341 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Oura 他4名: "Atomic-hydrogen-induced Ag cluster foumation on Si(111)-√<3>×√<3>-Ag surface obserrved by scanning tunneline microscopy." J.Vac.Sci.Technol.B14. 988-991 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.Oura 他4名: "Thin-film growth-mode analysis by low energy ion scattering" Surf.Sci.363. 161-165 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.Oura 他3名: "Observation of the diffusion of Ag atoms through an a-Si layer on Si(111)by low energy ion scattering" Surf.Sci.363. 156-160 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.Ueda 他1名: "Surfactant effect of hydrogen for nickel growth on Si(111)7×7 surface" Surf.Sci.357/358. 910-916 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.Ueda: "Electron-stimulated desorption study of an atomic bydrogen-adsorbed Fz-Si(100)surface" Surf.Sci.363. 337-341 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Watamori 他3名: "A New method to dlfect native oxide on Si with combined use of ^<16>O(α,α)^<16>O Resonance and channeling" Appl.Surf.Sci.(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] 尾浦 憲治郎: "半導体表面における水素媒介エピタキシ-" まてりあ(日本金属学会会報). 34. 115-120 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Oura 他 4名: "Scanning tunneling microscopy observation of hydrogen-induced Ag oluster formation on the Si(lll) surfaces" J.Vac.Sci.Technol.A13. 1438-1442 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Oura 他 5名: "The initial stage of Pb thin film growth on Si(lll) surface studied by TOF-TCISS" Nucl.Instr.& Methods. B(印刷中). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] M.Watamori 他 3名: "Backscattering Aralysis of Thin SiO_2 Films on Si using ^<16>O(α,α)^<16>O 3.045MeV Resonance" Nucl.Instr.& Methods. B(印刷中). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Ueda: "Highly Sensitive Detection of Oxygen from Si(lll)7×7 Surface by Time-of-Flight Type Electron Stimulation-Desorption Spectroscopy" Jpn.J.Appl.Phys.34. 1648-1651 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Ueda 他 2名: "Oxygen aclsorption study on Rh(100) surfaces by electron stimulated desorption" Jpn.J.Appl.Phys.34. 3662-3665 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Oura 他4名: "Elastic Recoil Detection Analysis of Coadsorption of H and D on Clean Si Surfaces" Nucl.Instr.Meshods in Phys,Res.B85. 344-346 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Oura 他4名: "Low Energy Ion Scattering Study of H-induced Reordering of Pb Monolayer Films on Si(111) Surfaces" Nucl.Instr.Methods in Phys.Res.B85. 439-442 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Oura 他4名: "Scanning Tunneling Microscope Obscrvation of Si(111)-3x1-Ag and 6xl-Ag Structares" Applied Surface Science. 82/83. 444-448 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Oura 他4名: "Low Temperature Adsorption of H on Si(111)and(100)Surfaces Studied by ERDA" Applied Surface Science. 82/83. 417-421 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 尾浦憲次郎: "半導体表面における水素媒介エピタキシ-" まてりあ(日本金属学会会報). 34. 115-120 (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] K.Ueda: "Highly Sensitive Detection of Oxygen from Si(111)-7×7 Surface by TOF-ESD" Japanese J.Applied Physics. 34(印刷中). (1995)

    • Related Report
      1994 Annual Research Report

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Published: 1994-04-01   Modified: 2016-04-21  

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