| Project/Area Number |
06402037
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| Research Category |
Grant-in-Aid for General Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | HOKKAIDO UNIVERSITY |
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Principal Investigator |
FUKUI Takashi Hokkaido Univ. RCIQE., Pro., 量子界面エレクトロニクス研究センター, 教授 (30240641)
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| Co-Investigator(Kenkyū-buntansha) |
MOTOHISA Junichi Hokkaido Univ. RCIQE,Associate Pro., 量子界面エレクトロニクス研究センター, 助教授 (60212263)
HASEGAWA Hideki Hokkaido Univ. Fac. of Eng., Pro., 工学部, 教授 (60001781)
赤澤 正道 北海道大学, 工学部・電気工学科, 助手 (30212400)
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| Project Period (FY) |
1994 – 1995
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| Project Status |
Completed (Fiscal Year 1995)
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| Budget Amount *help |
¥25,100,000 (Direct Cost: ¥25,100,000)
Fiscal Year 1995: ¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 1994: ¥22,000,000 (Direct Cost: ¥22,000,000)
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| Keywords | Semiconductor / Crystal Growth / Quantum Dots / GaAs / MOCVD |
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| Research Abstract |
We have fabricated AlGaAs/GaAs quantum dot structures using selective area metalorganic vapor phase epitaxy (MOVPE). First, GaAs pyramidal structures with four-fold symmetric {011} facet side walls are formed on SiN_x masked (001) GaAs with square openings. Once the pyramidal structures were completely formed, no growth occurs on the top and side walls of the pyramids. Furthermore, the shape and width of the top area observed by a scanning electron microscope (SEM) and an atomic force microscope (AFM) shows to be highly uniform. This indicates that self-limited growth mode occurs. Next, using these uniform pyramids, GaAs quantum dots are overgrown on the top of pyramids using different growth conditions. Sharp photoluminescence (PL) spectra are observed from uniform quantum dots.
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