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Control of Optical Transitions with Quantum Microstructures of Indirect Semiconductors

Research Project

Project/Area Number 06452103
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionThe University of Tokyo

Principal Investigator

SHIRAKI Yasuhiro  RCAST,the University of Tokyo, Professor, 先端科学技術研究センター, 教授 (00206286)

Co-Investigator(Kenkyū-buntansha) FUKATSU Susumu  Dept.of Pure and Appl.Sci., the University of Tokyo, Professor, 教養学部, 助教授 (60199164)
USAMI Noritaka  RCAST,the University of Tokyo, Research Associate, 先端科学技術研究センター, 助手 (20262107)
OSADA Toshihito  RCAST,the University of Tokyo, Lecturer, 先端科学技術研究センター, 講師 (00192526)
Project Period (FY) 1994 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥4,000,000 (Direct Cost: ¥4,000,000)
Fiscal Year 1995: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1994: ¥2,800,000 (Direct Cost: ¥2,800,000)
KeywordsSiGe / quantum well / quantum wire / quantum dot / neighboring confinement structure / 間接遷移型半導体 / 超格子
Research Abstract

We investigated optical properties of indirect semiconductors with atomically controlled superstructures. By observing confinement effect and development of island-related emission with incerasing Ge coverage in Si/pure-Ge/Si quantum wells, the onset of the island formation was determined to be 3.7 monolayrs. Quantum confinement effect of island-related emission was clearly observed, demonstrating that the islands have "quantum dot" character. The island was found to generate inhomogeneous strain-field to the surrounding materials and to modulate potential. Formation of the Ge "quantum wire" at the step-edge was evidenced by plan-view transmission electron microscopy, enhanced exciton-exciton interactions, and incerased density of states at the band edge. A novel semiconductor superstructure, "Neighboring Confinement Structure (NCS)", to improve optical properties of indirect semiconductors was developed and successfully applied to SiGe-and ALGaP-based superstructures. Particularly, in the case of SiGe/Si system, luminescence without phonon participation was selectively enhanced, demonstrating the potential of NCS as light emitters.

Report

(3 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] H. Sunamura: "Photoluminescence investigation on growth mode changeover of Ge on (100)" Journal of Crystal Growth. 157. 265-269 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H. Sunamura: "Island formation during growth of Ge on Si(100) : A study using photoluminescnece spectroscopy" Applied Physics Letters. 66. 3024-3026 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N. Usami: "Enhancement of radiative recombination in Si-based quantum wells with neighboring confinement structure" Applied Physics Letters. 67. 524-526 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N. Usami: "Dynamics of exciton diffusion in SiGe quantum wells on a V-groove patterned Si substratc" Physical Review. B52. 5132-5135 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] F. Issiki: "Efficient luminescence form AlP/Gap ncighboring confinement structure with A1GaP barrier layers" Applied Physics Letters. 67. 1048-1050 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K. Miyashita: "Incorporation kinetics of rarc-carth elements in Si during molccular bcam cpitaxy" Applied Physics Letters. 67. 235-237 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Sunamura: "Photoluminescence investigation on growth mode changeover of Ge on (100)" Journal of Crystal Growth. 157. 265-269 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Sunamura: "Island formation during growth of Ge on Si (100) : A study using photoluminescnece spectroscopy" Applied Physics Letters. 66. 3024-3026 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N.Usami: "Enhancement of radiative recombination in Si-based quantum wells with neighboring confinement structure" Applied Physics Letters. 67. 524-526 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N.Usami: "Dynamics of exciton diffusion in SiGe quantum wells on a V-groove patterned Si substrate" Physical Review. B52. 5132-5135 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] F.Issiki: "Efficient luminescence form AlP/GaP neighboring confinement structure with AlGaP barrier layrs" Applied Physics Letters. 67. 1048-1050 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Miyashita: "Incorporation kinetics of rare-earth elements in Si during molecular beam epitaxy" Applied Physics Letters. 67. 235-237 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Sunamura: "Photoluminescence investigation on growth mode changeover of Ge on (100)" Journal of Crystal Growth. 157. 265-269 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] H.Sunamura: "Island formation during growth of Ge on Si (100) : A study using photoluminescnece spectroscopy" Applied Physics Letters. 66. 3024-3026 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] N.Usami: "Enhancement of radiative recombination in Si-based quantum wells with neighboring confinement structure" Applied Physics Letters. 67. 524-526 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] N.Usami: "Dynamics of exciton diffusion in SiGe quantum wells on a V-groove patterned Si substrate" Physical Review. B52. 5132-5135 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] F.Issiki: "Efficient luminescence form AIP/GaP neighboring confinement structure with AlGaP barrier layers" Applied Physics Letters. 67. 1048-1050 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Miyashita: "Incorporation kinetics of rare-earth elements in Si during molecular beam epitaxy" Applied Physics Letters. 67. 235-237 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] S.Fukatsu: "Room temperature photoluminescence in strained-SiGe/Si quantum wells" J.of Vac.Sci.Technolo.B12. 1160-1162 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] S.Fukatsu: "Time-of-flight measurement of carrier transport and carrier collection in strained SiGe/Si quantum wells" J.of Vac.Sci.Technolo.B12. 1156-1159 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] H.Sunamura: "Optical detection of interdiffusion in strained SiGe/Si quantum well structures" Jpn.J.Appl.Phys.33. 2344-2347 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] N.Usami: "Fabrication of SiGe/Si quantum wire structures on a V-groove patterned Si substrate by gas-source Si molecular beam epitaxy" Solid-State Electronics,. 37. 539-541 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] N.Usami: "Strain-induced lateral band gap modulation in SiGe/Si quantum well and quantum wire structures" Journal of Crystal Growth. (発表予定). (1995)

    • Related Report
      1994 Annual Research Report

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Published: 1994-04-01   Modified: 2016-04-21  

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