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Crystal quality and impurity segregation of semiconductor crystals grown under microgravity

Research Project

Project/Area Number 06452106
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionUniversity of Tokyo

Principal Investigator

NISHIMAGA Tatau  University of Tokyo, Graduate School of Engineering, Professor, 大学院・工学系研究科, 教授 (10023128)

Co-Investigator(Kenkyū-buntansha) TANAKA Masaaki  University of Tokyo, Graduate School of Engineering, Assoc.Professor, 大学院・工学系研究科, 助教授 (30192636)
Project Period (FY) 1994 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 1995: ¥1,700,000 (Direct Cost: ¥1,700,000)
KeywordsMicrogravity / GaSb / Te impurity / Spatially Resolved photoluminescence / Segregation / Marangoni flow / Burstein-Moss effect / Bridgman growth / 中国回収型衛星 / フォトルミネッセンス / 不純物縞 / 転位密度
Research Abstract

GaSb single crystal grown by Chinese recoverable satellite No.14 was characterized by chemical etching and spatially resolved photoluminescence. The crystal doped with Te was grown by Bridgman technique under microgravity. The grown crystal was cut longitudinally along the growth direction <111>, into two parts and among them one piece was further cut perpendicular to the growth direction. Each sample was polished mechanically and chemically etched to reveal impurity striations, twin or grain boundaries and dislocations. It was demonstrated that impurity striations are present in the earth grown part while they are absent in space grown part. It was also found that the dislocation density goes to zero in the space grown part where the melt did not touch with the ampoule wall but it increases steeply in the part where strong contact with the wall occured.
The concentration distribution of Te was measured by using the spatially resolved photoluminescence (SRPL). The measurements of spatially resolved photoluminescence were carried out point by point from the earth grown seed part to the regrown part along the growth direction. It was found that the concentration of Te decreases abruptly at the interface between the seed ant the regrown part. Then, it increases rapidly to the impurity level of the seed region. The profile shows that the impurity doping occured in pure diffusion control and this suggests that Marangoni convection was stopped as well as the thermal convection.

Report

(3 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • Research Products

    (28 results)

All Other

All Publications (28 results)

  • [Publications] 西永 頌: "半導体の結晶成長" まてりあ. 33. 1029-1033 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T. Nishinaga: "Crystal Growth of Semiconductors under Microgravity in Space" Record of Alloy Semiconductor Physics and Electronics Symposium. 14. 55-56 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 西永頌、菅野卓雄、斉藤制海、河東田隆、浅田邦博、岸真人: "微小重力下でのシリコンの融液成長" 日本結晶成長学会誌. 21. 451-459 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 西永 頌、Peiwen Ge, Changru Huo, Jinping He: "中国回収型衛星によるGaSbのブリッジマン成長(II)" 第11回宇宙利用シンポジウム論文集. 11. 214-217 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 西永頌、菅野卓雄、斉藤制海、河東田隆、浅田邦博、岸真人: "微小重力下でのシリコンの融液成長" 第2回日中微小重力ワークショップ論文集. 2. 17-18 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A. N. Dani lewsky, Y. Okamoto, T. Nishinaga and K. W. Benz: "Theoretical study of macrostep stability under temperature gradient" J. Grystal Growth. 146. 171-176 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 西永頌、Peiwen Ge、Chongru Huo、 Jinping He、 中村卓義、河村茂雄: "微小重力下で成長させたGaSb: Teの評価" 東京大学工学部総合研究所年報. 54. 79-84 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 西永頌、中村卓義、河村茂雄、P. Ge、 C. Huo: "空間分解フォトルミネッセンス法による微小 重力下で成長させたGaSb: Teの濃度分布測定" 12th ISAS Space Utilization Symposium. 12. 235-239 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 西永頌、P. Ge、 C. Huo、 W. Huang、 中村卓義、Y. Yu: "NASAのGASプログラムによるGaSbのブリッジマン成長" 日本マイクログラビティ応用学会誌. 12. 265-266 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] P. Ge, T. Nishinaga, C.Huo, W. Huang, T. Nakamura, J. He and Y. Yu: "Bridgman growth of GaSb crystal : plan and ground based research" Proc. 46th International Astronautical Congress, Oct. 2-6, 1995/Osio, Norway. 46. 1-7 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 西永 頌(分担執筆): "人工結晶と新材料の創製" 三共 出版, 1994 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 西永 頌(分担執筆): "マイクログラビティ" 培風館, 317 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Nishinaga: "Crystal growth of semiconductors" Materia Japan. 33. 1029-1033 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Nishinaga: "Crystal growth of semiconductors under Microgravity in space" Record of Alloy Sympsium. 14. 55-56 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Nishinaga: "Melt growth of Si under microgravity" J.Jpn.Assoc.Crystal Growth. 21. 451-459 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Nishinaga: "Bridgman growth of GaSb undre microgravity (II)" Proc : 11th ISAS Space Utilization symposium. 11. 214-217 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Nishinaga: "Melt growth of spherical Si under microgravity" Proc.2nd Chino-Japan Work Shop on microgravity. 2. 17-18 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A.N.Danilewsky: "Theoretical study of macrostep stability under temperature gradient" J.Crystal Growth. 146. 171-176 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Nishinaga: "Characterization of Te doped GaSb grown under microgravity" Annual Rep.Engr.Res.Inst.Faculty of Engr.Univ.Tokyo. 54. 79-84 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Nishinaga: "Te concentration profile in space grown GaSb measured by Spatially Resolved photoluminescence" Proc.12th ISAS Space Utilization Symposium. 12. 235-239 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Nishinaga: "Bridgman growth of GaSb by NASA GAS program" J.Japan, Assoc.Microgravity Appl.12. 265-266 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] P.Ge: "Bridgman growth of GaSb crystal : Plan and ground based research" Proc.46th Congress. 46. 1-7 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Nishinaga et al: Fabrication of artificial crystals and new matetials. Sankyo Pub.Co., 175 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Nishinaga et al: Microgravity. Baifukan Pub.Co, 317 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 西永頌、Peiwen Ge、Chongru Huo、Jinping He、中村卓義、河村茂雄: "微小重力下で成長させたGaSb:Teの評価" 東京大学工学部総合研究所年報. 54. 79-84 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 西永頌、中村卓義、河村茂雄、P.Ge、C.Huo: "空間分解フォトルミネッセンス法による微小重力下で成長させたGaSb:Teの濃度分布測定" 12th ISAS Space Utilization Symposium. 12. 235-239 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 西永頌、P.Ge、C.Huo、W.Huang、中村卓義、Y.Yu: "NASAのGASプログラムによるGaSbのブリッジマン成長" 日本マイクログラビティ応用学会誌. 12. 265-266 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] P.Ge, T.Nshinaga, G.Huo, W.Huang, T.Nakamura, J.He, and Y.Yu: "Bridgman growth of GaSb crystal:Plan and ground based research" Proc.46th International Astronautical Congress. (in print). (1996)

    • Related Report
      1995 Annual Research Report

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Published: 1995-04-01   Modified: 2016-04-21  

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