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In situ gravimetric monitoring of atomic layr epitaxy using

Research Project

Project/Area Number 06452108
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

KOUKITU Akinori  Tokyo Univ.Agriculture and Technology, Fac.of Technology Associate professor, 工学部, 助教授 (10111626)

Co-Investigator(Kenkyū-buntansha) TAKAHASHI Naoyuki  Tokyo Univ.Agriculture and Techology, Fac.of Technology Assistant professor, 工学部, 助手 (50242243)
SEKI Hisashi  Tokyo Univ.Agriculture and Techonology, Fac.of Technology Professor, 工学部, 教授 (70015022)
Project Period (FY) 1994 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥7,000,000 (Direct Cost: ¥7,000,000)
Fiscal Year 1995: ¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 1994: ¥5,400,000 (Direct Cost: ¥5,400,000)
KeywordsIn situ monitoring / In situ gravimetric monitoring / In situ optical monitoring / Atomic layr epitaxy (ALE) / reconstruction / GaAs / In situ gravimetric Monitoring / reconstruction / その場測定 / グラヴィメトリック法 / 原子層エピタキシ- / III-V族半導体 / 化合物半導体 / 気相成長 / 有機金属 / 結晶成長
Research Abstract

In situ monitoring techniques play an important role in the investigation on the atomic layr epitaxy (ALE) growth mechanism. In this research, we have investigated in situ gravimetric monitoring of ALE using metalorganic sources. The main results obtained are summarized as follows :
(1) The resistance furnace is suitable heating system for the substrate.
(2) In the short purge time, which is used for the common ALE growth, the gtowth rate is unity in each ALE cycle. However, the growth rate decreases to the constant value, 0.75, for the long purge time, which corresponds to the As coverage on a (2x4) reconstructed surface.
The gravimetric and optical in situ methods were employed in this study. These methods provides real-time information under an atmospheric pressure. In particular, the gravimetric method is a powerful tool for the investigation of the ALE mechanism.

Report

(3 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] H. Ikeda: "Substitution of Surface-Absorbed As Atoms to P Atoms in Atomic Layer Epitoxy." Applied Surface Science. 82/83. 257-262 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 纐纈明伯: "GaAs原子層エピタキシ-のその場観察-グラヴィメトリック法および表面光吸収法-" 日本結晶成長学会誌. 21. 32-37 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A. Koukitu: "Determination of Surface Chemical Species in GaAs Atomic Layer Epitaxy by In Situ gravimetric Monitoring." Jpn. J. Appl. Phys.33. L613-L616 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 纐纈明伯: "ハロゲン系原子層エピタキシ-におけるGaAs成長過程のその場観察" 日本結晶成長学会誌. 21. S161-S168 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A. Koukitu: "In Situ Gravimetric Monitoring of Arsenic Desorption in GaAs Atomic Layer Epitaxy." J. Crystal Growth. 146. 239-245 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A. Koukitu: "In Situ Monitoring of the Growth Process in GaAs Atomic Layer Epitaxy by Gravimetric and Optial Methods." J. Crystal Growth. 146. 467-474 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 第9回「大学と科学」公開シンポジウム組織委員会編: "結晶成長のしくみを探る 原子レベルでの成長メカニズム" (株)クバプロ, 189 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Ikeda, Y.Miura, N.Takahashi, A.Koukitu and H.Seki: "Substitution of Surface-Adsorbed As Atoms to P Atoms in Atomic Layr Epitaxy." Applied Surface Science. 82/83. 257 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A.Koukitu, N.Takahashi, Y.Miura and H.Seki: "Determination of Surface Chemical Species in GaAs Atomic Layr Epitaxy by In Situ Gravimetric Monitoring." Jpn.J.Appl.Phys.33. L613 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A.Koukitu, N.Takahashi, Y.Miura and H.Seki: "In Situ Gravimetric Monitoring of Arsenic Desorption in GaAs Atomic Layr Epitaxy." J.Crystal Growth. 146. 239 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A.Koukitu, N.Takahashi and H.Seki: "In Situ Monitoring of the Growth Process in GaAs Atomic Layr Epitaxy by Gravimetric and Optical Methods." J.Crystal Growth. 146. 467 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N.Takahashi, H.Ikeda, A.Koukitu and H.Seki: "Vapor-Solid Distribution in In_<1-x>Ga_xAs and In_<1-x>Ga_xP Alloys Growth by Atomic Layr Epitaxy." J.Crystal Growth. 155. 27 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A.Koukitu, N.Takahashi and H.Seki: "In Situ Monitoring of the GaAs growth Process in Halogen Transport Atomic Layr Epitaxt." J.Crystal Growth. (in press.). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Ikeda: "Substitution of Surface Adscrbed As Atoms to P Atoms in Atomic layer Epitaxy" Applied Surface Science. 82/83. 257-262 (1994)

    • Related Report
      1995 Annual Research Report
  • [Publications] 纐纈明伯: "GaAs原子層エピタキシ-のその場観察-グラヴィメトリック法および表面吸収法-" 日本結晶成長学会誌. 21. 32-37 (1994)

    • Related Report
      1995 Annual Research Report
  • [Publications] A.Koukitu: "Determination of Surface Chemical Species in GaAs Atomic Layer Epitaxy by In situ gravimetric Monitoring" Jpn.J.Appl.Phys.33. L613-L616 (1994)

    • Related Report
      1995 Annual Research Report
  • [Publications] 纐纈明伯: "ハロゲン系原子層エピタキシ-におけるGaAs成長過程のその場観察" 日本結晶成長学会誌. 21. S161-S168 (1994)

    • Related Report
      1995 Annual Research Report
  • [Publications] A.Koukitu: "In Situ Gravimetric Monitoring of Arsenic Descrption in GaAs Atomic Layer Epitaxy" J.Crystal Growth. 146. 239-245 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] A.Koukitu: "In Situ Monitoring of the Growth Process in GaAs Atomic Layer Epitaxy by Gravimetric and Optial Methods" J.Crystal Growth. 146. 467-474 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 第9回「大学と科学」公開シンポジウム組織委員会編: "結晶成長のしくみを探る原子レベルでの成長メカニズム" (株)クバプロ, 189 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] A.KOUKITU: "In situ monitoring of the growth process in GaAs atomic layer expitaxy by gravimetric and optical methods." Journal of Crystal Growth. 146. 467-474 (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] A.KOUKITU: "In situ gravimetric monitoring of arsenic desorption in GaAs atomic layer expitaxy" Journal of Crystal Growth. 146. 239-245 (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] H.IKEDA: "Substitution of surface-adsorbed As atoms to P atoms in atomic layer expitaxy" Applied Surface Science. 82/83. 257-262 (1994)

    • Related Report
      1994 Annual Research Report

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Published: 1994-04-01   Modified: 2016-04-21  

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