| Project/Area Number |
06452160
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
機械工作・生産工学
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| Research Institution | Osaka University |
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Principal Investigator |
ENDO Katsuyoshi Osaka Univ., Fac.of Eng., Associate Professor, 工学部, 助教授 (90152008)
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| Co-Investigator(Kenkyū-buntansha) |
YAMAUCHI Kazuto Osaka Univ., Fac.of Eng., Associate Professor, 工学部, 助教授 (10174575)
MORI Yuzo Osaka Univ., Fac.of Eng., Professor, 工学部, 教授 (00029125)
KATAOKA Toshihiko Osaka Univ., Fac.of Eng., Professor, 工学部, 教授 (50029328)
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| Project Period (FY) |
1994 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥7,200,000 (Direct Cost: ¥7,200,000)
Fiscal Year 1996: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1995: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1994: ¥4,400,000 (Direct Cost: ¥4,400,000)
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| Keywords | STM / STS / Ab-inito MO / H-terminated Si surface / First principle MD / Local density of states / Si (001) 2*1 surface / Elementary analysis / Si wafer / Si(001)2×1表面 / 走査型トンネル顕微鏡 / 走査型トンネル分光 / 水素終端化 / 走査型トンネル分光法 / シリコンウェーハ / 金属汚染物 / 表面分析 / 電子構造 |
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| Research Abstract |
In this work, we have developed a Scanning Tunneling Microscope (STM) /Scanning Tunneling Spectroscope (STS) system. This system can observe both STM image and STS data of the surface simultaneously. Typical STM images of the surfaces of Highly Oriented Pyrolytic Graphite (HOPG), Si wafer and EEM product are also observed. The HOPG image shows that the difference of electronic structure between alpha-site and beta-site. Electronic structure of the surface of Si wafer contaminated by metallic atoms is calculated by Ab-initio MO.According to the results which is different from the results of H-terminated Si wafer, we have shown the possiblility of atomic-order elementary analysis. We have found that the significant difference of STS data between H-terminated Si Wafer and Cu-contaminated Si wafer may occur by the spatial distribution of wave function in Ab-initio MO.Because of DHF treatment, dihydride is dominant on the surface of H-terminated Si (001) wafer. Tmie-dependent stability of the surface is confirmed by FTIR-ATR.Local density of states (LDOS) have been calculated on Si (001) 2*1 surface and Cu-contaminated Si (001) surface. STM/STS scanning is also performed on Si (001) 2*1 surface and Al- or Cu-contaminated Si (001) surfaces in UHV chamber. The results show the differences of LDOS data and some issues of the measurement.
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