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Fabrication of Ultrasmall Compound Semiconductor Nanostructures with Controlled Interfaces and Characterization of Their Electronic Properties

Research Project

Project/Area Number 06452208
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

MOTOHISA Junichi  Hokkaido University, Research Center for Interface Quantum Electronics, Associate Professor, 量子界面エレクトロニクス研究センター, 助教授 (60212263)

Co-Investigator(Kenkyū-buntansha) SAITOH Toshiya  Hokkaido University, Research Center for Interface Quantum Electronics, Associat, 量子界面エレクトロニクス研究センター, 助教授 (70241396)
SAWADA Takayuki  Hokkaido Institute of Technology, Dept. Applied Electronics., Professor, 工学部, 教授 (40113568)
Project Period (FY) 1994 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥7,100,000 (Direct Cost: ¥7,100,000)
Fiscal Year 1995: ¥2,900,000 (Direct Cost: ¥2,900,000)
Fiscal Year 1994: ¥4,200,000 (Direct Cost: ¥4,200,000)
KeywordsSemiconductor / Patterned Substrate / Vicinal Substrate / Crystal Growth / Multiatomic Step / Quantum Dot / Lateral Surface Superlattice / Electron Interference
Research Abstract

The objective of the present research is to realize semiconductor quantum nanostructures with controlled interfaces by utilizing the self-organized nature of the crystal growth. In particular, various types of quantum nanostructures were fabricated by metal-organic vapor phase epitaxial growth (MOVPE) growth on patterned substrates or on vicinal substrates. The main results are listed below.
(1) We studied on a growth process on patterned GaAs (001) substrate during metal-organic vapor phase epitaxy (MOVPE) and a novel approach for the fabrication of AlGaAs/GaAs quantum dot (QD) structures. The patterned substrate have an array of holes on the surface and those holes are partially filled with GaAs by MOVPE growth, followed by GaAs/AlGaAs quantum well structures. Detailed investigation on growth process on such patterned substrates revealed the presence of complicated two-dimensional migration of Ga and Al between different facets. Formation of GaAs dots was directly confirmed by spatially resolved cathodoluminescence measurements.
(2) We propose a new, lateral surface superlattice (LSSL) type of electron interference devices, where the period of LSSL is typically 60nm, by utilizing multiatomic steps on a vicinal GaAs (001) surface. Conductivity of the device is theoretically studied by taking the effect of randomness in the LSSL into account. We also investigate its drain and transconductance characteristics experimentally at low temperatures, and found clear oscillations in gm-V_G characteristics, which were ascribed to the electron interference effect.

Report

(3 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • Research Products

    (20 results)

All Other

All Publications (20 results)

  • [Publications] J.Motohisa: "Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates" Jpn.J.Appl.Phys.34. 1098-1101 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] J.Motohisa: "Theoretical and Experimental Investigation of an Electron Interference Devicie using Multiatomic Steps on Vicinal GaAs Surfaces" Physica B. (to be published in 1996).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Kumakura: "Dynamics of Metarlorganic Vapor Phase Epitaxy Growth for GaAs/AlGaAs Micropyramids" J.Cryst.Growth. 145. 308-313 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] S.Hara: "Formation and Photoluminescence Characterization of Quantum Well Wires Using Multiatmic Steps Grown by MOVPE" J.Cryst.Growth. 145. 692-697 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Kumakura: "Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy" Jpn.J.Appl.Phys.34. 4387-4389 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] S.Hara: "Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy" Jpn.J.Appl.Phys.34. 4401-4404 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Kumakura: "Dynamics of Metalorganic Vapor Phase Epitaxy Growth for GaAs/AlGaAs Micro-pyramids" J.Cryst.Growth. 145. 308-313 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] S.Hara: "Formation and Photoluminescence Characterization of Quantum Well Wires Using Multiatomic Steps Grown by MOVPE" J.Cryst.Growth. 145. 692-697 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] J.Motohisa: "Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates" Jpn.J.Appl.Phys.34. 1098-1101 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] K.Kumakura: "Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy" Jpn.J.Appl.Phys.34. 4387-4389 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] S.Hara: "Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001) GaAs Surfaces by Metalorganic Vapor Phase Epitaxy" Jpn.J.Appl.Phys.34. 4401-4404 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] J.Motohisa: "Theoretical and Experimental Investigation of an Electron Interference Device using Multiatomic Steps on Vicinal GaAs Surfaces" Physica B. (to be published in 1996).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] J.Motohisa: "Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates" Jpn.J.Appl.Phys.34. 1098-1101 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Kumakura: "Novel Formation Method of Quantum Dot Structures by Self-Limited Selective Area Metalorganic Vapor Phase Epitaxy" Jpn.J.Appl.Phys.34. 4387-4389 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] S.Hara: "Quantum Well Wire Fabrication Method Using Self-Organized Multiatomic Steps on Vicinal (001)GaAs Surfaces by Metalorganic Vapor Phase Epitaxy" Jpn.J.Appl.Phys.34. 4401-4404 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] J.Motohisa: "Theoretical and Experimental Investigation of an Electron Interference Devicie using Multiatomic Steps on Vicinal GaAs Surfaces" Physica B. (to be published in 1996).

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Kumakura: "Dynamics of Metarlorganic Vapor Phase Epitaxy Growth for GaAs/AlGaAs Micro-pyramids" J.Cryst.Growth. 145. 308-313 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] S.Hara: "Formation and photoluminescence Characterization of Quantum Well Wires Using Multiatmic Steps Grown by MOVPE" J.Cryst.Growth. 145. 692-697 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] J.Motohisa: "Fabrication of GaAs/AlGaAs Quantum Dots by Metalorganic Vapor Phase Epitaxy on Patterned GaAs Substrates" Jpn.J.Appl.Phys.34. 1098-1101 (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] T.Fukui: "Multiatomic Step Formation Mechanism of MOVPE Grown GaAs Vicinal Surfaces and Its Application to Quantum Well Wires" J.Cryst.Growth. 146. 183-187 (1995)

    • Related Report
      1994 Annual Research Report

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Published: 1994-04-01   Modified: 2016-04-21  

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