| Project/Area Number |
06452210
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Tohoku University |
|---|
Principal Investigator |
NIWANO Michio Tohoku University, Research Institute of Electrical Communication, Associate Professor, 電気通信研究所, 助教授 (20134075)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
ENTA Yoshiharu Tohoku University, Research Institute of Electrical Communication, Assistant, 電気通信研究所, 助手 (20232986)
宮本 信雄 東北大学, 電気通信研究所, 教授 (00006222)
|
|---|
| Project Period (FY) |
1994 – 1996
|
| Project Status |
Completed (Fiscal Year 1996)
|
| Budget Amount *help |
¥7,500,000 (Direct Cost: ¥7,500,000)
Fiscal Year 1996: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 1995: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1994: ¥5,400,000 (Direct Cost: ¥5,400,000)
|
|---|
| Keywords | Photo-induced catalytic reaction / Organometallic compound / Ultra-thin film / Ultraviolet light / Synchrotron radiation / Layred structure / Photodecomposition |
|---|
| Research Abstract |
We have investigated a method of fabricating multi-layred ultra-thin film structure by photoinduced catalytic reactions of organomatallic compounds on solid surfaces. We utilized ultraviolet (UV) and vacuumultraviolet (VUV) lights as the exciting light source.
We have investigated the photo-induced reactions of organic compounds such as tetramethylsilane (TMS) and its hydrogen-sustitued compounds which take place on Si surfaces. These compounds are precurcers for wide-gap semiconductor silicon carbide, SiC.We confirmed that amorphous SiC is formed on the Si surface by the photodecomposition and subsequent photopolymerization of TMS.We also demonstrated with IR measurements that the C-H bonds of TMS are decomposed by VUV irradiation through two reaction pathways : one is the primary photodecomposition and the other is the secondary process in which photofragments react with TMS.
The metal/GaAs interface reaction which occurs during the deposition of metals on GaAs have been investigated using synchrotron-radiation photoemission spectroscopy, x-ray diffraction, and Rutherford backscattering spectroscopy. We found that diffusion and aggregation of metal atoms at the metal/GaAs interface proceeds in different manners depending on the metal deposited and the surface chemical state of the GaAs substrate. We also revealed that CaF_2 epitaxially grows on the sulfur-treated GaAs surface, while the traditional acid treatment of the surfaceleads to formation of amorphous CaF_2
|
