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Preparation of Ferroelectric Superlattice Using Phot-excited Process and Their applications to Functional Deviccs

Research Project

Project/Area Number 06452217
Research Category

Grant-in-Aid for General Scientific Research (B)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionKYOTO UNIVERSITY

Principal Investigator

SHIOSAKI Tadashi  Kyoto University, Graduate School of Engineering Associate Professor, 工学研究科, 助教授 (80026153)

Co-Investigator(Kenkyū-buntansha) SIMIZU Masaru  Himeji Inst.of Tech.Faculty of Engineering, Associate Professor, 工学部, 助教授 (30154305)
Project Period (FY) 1994 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥5,200,000 (Direct Cost: ¥5,200,000)
Fiscal Year 1995: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1994: ¥3,100,000 (Direct Cost: ¥3,100,000)
Keywordsferroelectric superlattice / MOCVD / ultrathin film / AFM / TRXD / in-situ observation / ferroelectric super lattice / Pb系超格子薄膜 / 薄膜 / 光励起MOCVD法 / PZT / ペロブスカイト / 二酸化窒素 / オゾン / 絶縁破壊電圧
Research Abstract

PbTiO_3, Pb (Zr, Ti) O_3 (PZT) and (Pb, La) (Zr, Ti) O_3 (PLZT) thin films were prepared by MOCVD in order to realize the Pb-based ferroelectric superlattice structure. For the evaluation of the crystallinity and epitaxial relationship of the ultrathin films, the energy dispersive typed total reflection X-ray diffraction (TRXD) method was used for the first time. The growth mechanism of pbTiO_3 and PZT thin films at the initial growth stage was also investigated using an atomic force microscope (AFM).
Using TRXD,in-plane orientation, epitaxial relationship and lattice spacing of PbTiO_3 and PZT thin films (3 nm - 100 nm in thickness) grown on Pt/MgO were evaluated. From these measurements, it was found that the in-plane orinetations of PbTiO_3 and PZT were strongly dependent on that of Pt on MgO.Lattice spacing of PZT (100) in in-plane at an azimutal angle of 0゚ was 0.399nm. It was also found that PZT on Pt/MgO was compressed in the in-plane and tensed in the vertical direction by the internal stress derived from the inner strains such as lattice mismatch, differnce in the thermal expansion coefficient and the volume change with the ferroelectric phase transition. AFM observations of initial growth stage of PbTiO_3 showed that the islands grew gradually in a lateral dimension until finally they covered the entire substrate surface. From AFM observatins, it was found that the main growth mechanism initial growth stages (-100 nm in thickness) was two-dimensional growth.
From our experiments, it was found that the TRXD method and AFM are very useful to evaluate the structural nature of ultrathin ferroelectric films. In particular, the energy dipersive type TRXD method is very promising to evaluate ferroelectric superlattice structure because highly precise in-situ measurement with high reliability can be carried out.

Report

(3 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • Research Products

    (28 results)

All Other

All Publications (28 results)

  • [Publications] Tadashi Shiosaki: "Metalorganic Chemical Vapor Deposition of Ferroelectric Pb(Zr,Ti)O_3 Thin Films" Integrated Ferroelectrics. 9. 13-20 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Tadashi Shiosaki: "Characterization of PZT Films Grown by MOCVD on 6-8 Iach si Wafers" Integrated Ferroelectrics. 7. 111-121 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Masaru Shimizu: "Preparation of PZT Thin Films by MOCVD Using a New Pb Precursor" Integrated Ferroelectrics. 7. 155-164 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Masaru Shimizu: "Preparation of Bi_4Ti_3O_<12> Films by MOCVD and Their Application to Memory Devices" Integrated Ferroelectrics. 6. 35-46 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Masaru Shimizu: "MOCVD of Ferroelectric Pb(Zr,Ti)O_3 and (Pb, La)(Zr, Ti)O_3 Thin Films for Memory Device Applications" Mat. Res. Soc. Symp. Proc.361. 295-305 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Masaru Shimizu: "Thermal Effects in Properties of Photovoltaic currents of Pb(Zr, Ti)O_3 Thin Films" Jpn. J. Appl. Phys.34. 5258-5262 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Tadashi Shiosaki: "Phase and Composition Control of PZT Thin Films" Ferroelectrics. 170. 47-55 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 塩崎 忠: "強誘電体薄膜メモリ" サイエンスフォーラム, 377 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Shiosaki: "Metalorganic Chemical Vapor Deposition of Ferroelectric Pb (Zr, Ti) O_3 Thin Films" Integrated Ferroelectrics. 9. 13-20 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Shiosaki: "Characterization of PZT Films Grown by MOCVD on 6-8 Inch Si Wafers" Integrated Ferroelectrics. 7. 111-121 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Shimizu: "Preparation of PZT Thin Films by MOCVD Using a New Pb Precursor" Integrated Ferroelectrics. 6. 155-164 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Shimizu: "Preparation of Bi_4Ti_3O_<12> Films by MOCVD and Their Application to Memory Device" Integrated Ferroelectrics. 6. 35-46 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Shimizu: "MOCVD of Ferroelectric Pb (Zr, Ti) O_3 and (Pb, La) (Zr, Ti) O_3 Thin Films for Memory Device Application" Mat.Res.Soc.Symp.Proc.361. 295-305 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Shimizu: "Thermal Effects in Properties of Photovoltaic Currents of Pb (Zr, Ti) O_3 Thin Films" Jpn.J.Appl.Phys.34. 5258-5262 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Shiosaki: Memory of Ferroclectric Thin Films. The Science Forum (book), 377 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Tadashi Shiosaki: "Metal organic chemical Vapor Deposition of Ferroelectric Pb(Zr, Ti)O_3 Thin Films" Integrated Ferroelectrics. 9. 13-20 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Tadashi Shiosaki: "Characterization of PZT Films Grown by MOCVD on 6-8 Inch Si Waters" Integrated Ferroelectrics. 7. 111-121 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Masaru Shimizu: "Preparation of PZT Thin Films by MOCVD Using a New Pb Drecursor" Integrated Ferroelectrics. 6. 155-164 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Tadashi Shiosaki: "Preparation of Bi_4Ti_3O_<12> Films by MOCVD and Their Application to Memory Derices" Integrated Ferroelectrics. 6. 35-46 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Masaru Shimizu: "MOCVD of Ferroelectric Pb(Zr, Ti)O_3 and (Pb, La)(Zr, Ti)O_3 Thin Films for Memory Device Applications" Mat, Res, Soc Symp Prec. 361. 295-305 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Masaru Shimizu: "Thermal Effects in Properties of Pho to voltaic Currents of Pb(Zr, Ti)_3 thin Films" Jpn J. Appl Phys. 34. 5258-5262 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 塩嵜 忠: "強誘電体薄膜メモリ" サイエンスフォーラム, 377 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Masaru Shimizu: "Photoenhanced MOCVD of PbZrx Ti_<1-X>O_3 Thin Films" Appl.Surf.Sci.79/80. 293-298 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Masaru Shimizu: "Coutrol of Pb(Zv,Ti)O_3 Thin Film chaructevistics Using Metal-Organic Chemical Vapor Degosition" J.Korean Phys.Suc.27. S49-S53 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Tadashi Shiosaki: "Large Area Growth of Pb(Zr,Ti)O_3 Thin Films by MOCVD" Intergated Ferroelectrics. 5. 39-45 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Masaru Shimizu: "Effects of the Utilizution of a Butter Lager on the Growth of Pb(Zr,Ti)O_3 Thin Films by Metalorganic Chemical Vapor Degusition" J.Cryst.Growth. 145. 226-231 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Masaru Shimizu: "Effects of O_3 on Growth and Electrical Properties of Pb(Zr,Ti)O_3 Thin Films by Photoenhanced Metalorganic Chemical Vagor Pegusition" Jpn.J.Appl.Phys.33. 5135-5138 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Masaru Shimizu: "MOCVD of Ferroelectric Pb(Zr,Ti)O_3 and (Pb,La)(Zv,Ti)O_3 Thin Films for Memory Device Applications" to be published in Mat.Res.Soc.Proc.(1995)

    • Related Report
      1994 Annual Research Report

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Published: 1994-04-01   Modified: 2016-04-21  

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