• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Research on Logic Circuits Using Single-Electron Transistors

Research Project

Project/Area Number 06452229
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionYokohama National University

Principal Investigator

SUGAHARA Masanori (1996)  Yokohama National University, Faculty of Engineering, Professor, 工学部, 教授 (40017900)

吉川 信行 (1994-1995)  横浜国立大学, 工学部, 助教授 (70202398)

Co-Investigator(Kenkyū-buntansha) KANEDA Hisayoshi  Yokohama National University, Faculty of Engineering, Research Assistant, 工学部, 助手 (30242382)
YOSHIKAWA Nobuyuki  Yokohama National University, Faculty of Engineering, Assistant Professor, 工学部, 助教授 (70202398)
菅原 昌敬  横浜国立大学, 工学部, 教授 (40017900)
Project Period (FY) 1994 – 1996
Project Status Completed (Fiscal Year 1996)
Budget Amount *help
¥7,500,000 (Direct Cost: ¥7,500,000)
Fiscal Year 1996: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1995: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1994: ¥6,000,000 (Direct Cost: ¥6,000,000)
KeywordsCoulomb blockade / single electronics / SET effect / single electron transistor / single electron device / integrated circuit / single electron / logic circuit / 論理回路
Research Abstract

We have investigated the basic characteristics of logic circuits using single-electron transistors to consider a perspective of single-electron digital electronics, and proposed a new single electron logic circuit. We have also conducted the experimental study on small bridge junctions using granular thin films to examine the single-electron tunneling effect in very small tunnel junctions, and tried to realize a field effect devices based on the single-electron-tunneling effect.
Regarding the single-electron logic circuits, we have calculated static and dynamic characteristics of several types of single electron logic gates (resistively-coupled single-electron logic gates and capacitively-coupled single-electron logic gates) based on the semiclassical model using the Monte Carlo method. We have shown that the resistively coupled logic are advantageous in making large-scale digital circuits, because they have large voltage gain and high stability of the logic function against background fixed charges. We have also proposed a new complementary digital logic using resistively-coupled single-electron transistors and shown that it has larger voltage swing with better logic level stability than conventional single-electron logic gates.
On the other hand, we have fabricated nanoscale microbridges made of NbN granular thin films. We have observed a clear Coulomb blockade at 4.2K in current-voltage characteristics, and observed periodic conductance modulations induced by the gate electric field. The experimental results agree well with the numerical simulation based on the model of a two-dimensional array of single-electron-tunneling junctions. The estimation of the charge soliton length in the microbridges suggests that the microbridges have zero-dimensional properties.

Report

(4 results)
  • 1996 Annual Research Report   Final Research Report Summary
  • 1995 Annual Research Report
  • 1994 Annual Research Report
  • Research Products

    (16 results)

All Other

All Publications (16 results)

  • [Publications] N.Yoshikawa, H.Kimijima, N.Miura, M.Sugahara: "Single-Electron-Tunneling Effect in Nanoscale Granular Microbridges" Japanese Journal of Applied Physics. 36. 4161-4165 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] N.Yoshikawa, K.Fukushima and M.Sugahara: ""Influence of inhomogeneity on correlated single-electron tunneling in one-dimensional array of small tunnel junctions"" Physica B. 194-196. 1309-1310 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] X.Chen, N.Yoshikawa and M.Sugahara: ""Observation of Single-electron Charging Effect in NbN Submicron Bridges"" Physica B. 194-196. 1677-1678 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] N.Yoshikawa, H.Ishibashi and M.Sugahara: ""Dynamic Characteristics of Inverter Circuits Using Single Electron Transistor"" Jpn.J.Appl.Phys. 34. 1332-1338 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] N.Yoshikawa, N.Miura, X.Chen, K.Yokoyama and M.Sugahara: ""Electrical Field Effect in Highly Resistive NbN Microbridge"" IEEE Trans.on Applied Superconductivity. 5. 3090-3093 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Fukuzawa, H.Kimijima, N.Yoshikawa and M.Sugahara: ""Fabrication of Pd Nanostructures with Scanning Tunneling Microscope"" Jpn.J.Appl.Phys. 34. L1221-L1223 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] N.Miura, N.Yoshikawa and M.Sugahara: ""Coulomb blockade and electrical field effect in nanoscale granular microbridges"" Appl.Phys.Lett.67. 3969-3971 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Su, N.Yoshikawa and M.Sugahara: ""Study of electrical conduction properties of NbN thin films using NbN/MgO/NbN double tunnel junctions"" Supercond.Sci.Technol.9. A152-A155 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] N.Yoshikawa, Y.Jinguu, H.Ishibashi and M.Sugahara: ""Complementary Digital Logic Using Resistively Coupled Single Electron Transistor"" Jpn.J.Appl.Phys. 35. 1140-1145 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] N.Yoshikawa, H.Kimijima, N.Miura and M.Sugahara: ""Single-Electron-Tunneling Effect in Nanoscale Granular Microbridge"" Jpn.J.Appl.Phys. 36. 4161-4165 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Su,N.Yoshikawa and M.Sugahara: "Study of electrical conduction properties of NbN thin films using NbN/MgO/NbN double tunnel junctions" Superconductor Science & Technology. 9. A152-A155 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] N.Yoshikawa,Y.Jinguu,H.Ishibashi and M.Sugahara: "Complementary Digital Logic Using Resistively Coupled Single Electron Transistor" Japanese Journal of Applied Physics. 35. 1140-1145 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Sugahara,X.-Y.Han,H.-F.Lu,A.Ito,S.Maejima,S.-B.Wu,H.Gao,K.Uno,N.Haneji,H.Kaneda and N.Yoshikawa: "Anomalous Effect in La_<2-X>Sr_XCuO_4 of Doping Level x=1/4^n" Japanese Journal of Applied Physics. 35. 1221-1224 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] N.Yoshikawa,H.Kimijima,N.Miura and M.Sugahara: "Single-Electron-Tunneling Effect in Nanoscale Granular Microbridge" Japanese Journal of Applied Physics. 36(掲載予定). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] Nobuyuki Yoshikawa: "Dynamic Characteristics of Inverter Circuits Using Single Electron Transistors" Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials. 334-336 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Nobuyuki Yoshikawa: "Dynamic Characteristics of Inverter Circuits Using Single Electron Transistors" Jpn.J.Appl.Phys.34. (1995)

    • Related Report
      1994 Annual Research Report

URL: 

Published: 1994-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi