| Project/Area Number |
06452233
|
|---|
| Research Category |
Grant-in-Aid for General Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
電子デバイス・機器工学
|
|---|
| Research Institution | KEIO UNIVERSITY |
|---|
Principal Investigator |
KUWANO Hiroshi KEIO UNIVERSITY,FACULTY OF SCIENCE AND TECHNOLOGY,PROFESSOR, 理工学部, 教授 (10051525)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
YOSHIDA Masayuki KYUSHU INSTITUTE OF DESIGN,PROFESSOR, 教授 (80038984)
MATSUMOTO Satoru KEIO UNIVERSITY,FACULTY OF SCIENCE AND TECHNOLOGY,PROFESSOR, 理工学部, 教授 (00101999)
|
|---|
| Project Period (FY) |
1994 – 1995
|
| Project Status |
Completed (Fiscal Year 1995)
|
| Budget Amount *help |
¥7,300,000 (Direct Cost: ¥7,300,000)
Fiscal Year 1995: ¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 1994: ¥4,600,000 (Direct Cost: ¥4,600,000)
|
|---|
| Keywords | diffusion of boron / silicon / ultra-shallow junctions / modeling of dopant profiles / rapid thermal diffusion / elemental boron source / ド-ピング / プロセスモデリング |
|---|
| Research Abstract |
In this workwe aimed to develop a new doping technique forming very shallow pn-junctions for whole wafer for one time, and to model the dopant concentration profiles. The new doping technique consisting of silicon surface cleaning, deposition of dopant source and rapid thermal diffusion was performed in ultra vacuum chamber successively. By combining the oxidation of silicon surface in hydrosulfide aqueious dipping and the desorption of the oxide by heating in ultra vacuum chamber, contamination free surface was obtained. Elemental boron this films were deposited pyrolytically using B_2H_6 gas on the silicon surface. Then samples were heated up rapidly in the chamber. Surface boron concentration and junction depths were well controlled by varying the deposition time of boron films and the thermal didffusion time. Ultra-shallow pn-jnctions of 20-40 nm with very high surface boron concentration of 2x10^<20> cm^<-3> were attained. Dopant concentration profiles were calculated on the base of the assumption that dopant diffuses with a form of a dopant-vacancy pair. Kink and tail in the profiles can be weel simulated by this model. It is further necessary to include interstitials in this model as well as vavancies.
|
