| Project/Area Number |
06453089
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Metal making engineering
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| Research Institution | Tohoku University |
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Principal Investigator |
YAMAMURA Tsutomu Faculty of Engineering, Tohoku University, Professor, 工学部, 教授 (80005363)
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| Co-Investigator(Kenkyū-buntansha) |
ENDO Mamoru Faculty of Engineering, Tohoku University, Research Associate, 工学部, 助手 (30213599)
ZHU Hongmin Faculty of Engineering, Tohoku University, Associate Professor, 工学部, 助教授 (40216148)
SATO Yuzuru Faculty of Engineering, Tohoku University, Associate Professor, 工学部, 助教授 (80108464)
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| Project Period (FY) |
1994 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥8,000,000 (Direct Cost: ¥8,000,000)
Fiscal Year 1996: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1995: ¥2,500,000 (Direct Cost: ¥2,500,000)
Fiscal Year 1994: ¥3,500,000 (Direct Cost: ¥3,500,000)
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| Keywords | compound / semiconductor / high temperature / melt / physical property / viscosity / sound velocity / diffusion coefficient / 粘性係数 / 液体 / 金属化合物 / 密度 / 超音波音速 |
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| Research Abstract |
The properties of compound semiconductor melt at high temperature are very important since the compound semiconductors are produced through the crystal growth from the melts.
The aim of this project is to measure and evaluate theoretically the physcochemical and the transport properties, for example, density, diffusion coefficient, viscosity, ultrasonic velocity and ultrasonic absorption coefficient of high temperature melt, especially III-V compound semiconductor.
The results obtained in this year are follows ; Density of In-Sb and Ga-Sb melts were measured in entire composition range by using the manometric method. Molar volumes of the melts show monotonous curve vs. composition and deviate about 1% at the composition of the compounds. Ultrasonic velocity and absorption coefficient of In-Sb and Ga-Sb melts were measured in also entire composition range by using the pulse transmission method in which the sample melts were sealed completely. The precisions of the measurements were about 0.1%. Additionally the viscosity of Si-Fe melt, whose behavior was not yet clear, was measured by using oscillatory viscometer which was improved to adapt to high temperature up to 1600ﾟC.The result showed that the viscosity increased monotonously with increasing the content of Fe.
In this work, physicochemical and transport properties of high temperature semiconductor melts became clear and no abnormal behaviors, for example, steep peak around the composition of the compound were found although some previous works reported that kind of abnormalities which suggested the solid like structures in the melts.
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