| Project/Area Number |
06555013
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (A)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 試験 |
|---|
| Research Field |
Applied optics/Quantum optical engineering
|
|---|
| Research Institution | Nagoya Institute of Technology |
|---|
Principal Investigator |
UMENO Masayoshi Nagoya Institute of Technology, Department of Electrical and Computer Engineering, Professor, 工学部, 教授 (90023077)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
MATSUMOTO Koh Nippon Sanso Corporation, Tsukuba Laboratries, Manager, つくば研究所, 室長
EGAWA Takashi Nagoya Institute of Technology, Research Center for Micro-Structure Devices, Ass, 極微構造デバイス研究センター, 助教授 (00232934)
JIMBO Takashi Nagoya Institute of Technology, Research Center for Micro-Structure Devices, Pro, 極微構造デバイス研究センター, 教授 (80093087)
|
|---|
| Project Period (FY) |
1994 – 1996
|
| Project Status |
Completed (Fiscal Year 1996)
|
| Budget Amount *help |
¥18,000,000 (Direct Cost: ¥18,000,000)
Fiscal Year 1996: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1995: ¥4,800,000 (Direct Cost: ¥4,800,000)
Fiscal Year 1994: ¥11,000,000 (Direct Cost: ¥11,000,000)
|
|---|
| Keywords | Droplet epitaxy / Metalorganic chemical vapor deposition / Island / Lifetest / Laser on Si / Dislocation / Self-formed / Quantum well structure / 暗線欠陥 / ピニング効果 / 寿命 / 量子井戸レーザー / 熱処理 / 有機金属気相成長法 / シリコン上ガリウム砒素 |
|---|
| Research Abstract |
We have demonstrated 300 K lasing oscillation of the self-formed AlGaAs/GaAs laser diode on Si grown by metalorganic chemical vapor deposition for the first time. The AlGaAs/GaAs laser diodes with the self-formed GaAs islands active regions on Si substrates showed the threshold current of 260 mA,the threshold current density of 5.4 kA/cm^2 and the lasing wavelength of 791 nm with the FWHM of 2.8 nm under pulsed condition at 300 K.The self-formed GaAs islands on Si grown by the droplet epitaxy exhibited a conical shape with heights of 8 nm and effective diameters of 300 nm. Compared with the conventional quantum well laser diode on Si, the self-formed laser diode on Si exhibited the improved reliability due to the reduction of the dislocation number in the active region.
|
