| Project/Area Number |
06640483
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
固体物性Ⅱ(磁性・金属・低温)
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| Research Institution | KYUSHU UNIVERSITY |
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Principal Investigator |
FUKAMI Takeshi Kyushu University, Faculty of Science, Associate professor, 理学部, 助教授 (20037261)
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| Co-Investigator(Kenkyū-buntansha) |
ICHIKAWA Fusao Kyushu University, Faculty of Science, Research Associate, 理学部, 助手 (30223085)
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| Project Period (FY) |
1994 – 1995
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| Project Status |
Completed (Fiscal Year 1995)
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| Budget Amount *help |
¥1,600,000 (Direct Cost: ¥1,600,000)
Fiscal Year 1995: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 1994: ¥1,000,000 (Direct Cost: ¥1,000,000)
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| Keywords | Metal-nonmetal transition / seze effect / bismuth / サイズ量子化 / 二次元系 |
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| Research Abstract |
By a vacuum evaporation technique, bismuth thin films were prepared on BaF_2 single crystal substrate with (111) surface. To improved the degradation of films due to a misfiting of the lattice constant between Bi and BaF_2 by about 3.6%, the heat treating was carried out at a temperature just below the melting point(273ﾟC). By X ray analysis, it was confirmed that the films were single crystal and had a preferred orientation perpendicular to the surface of the substrate. The experimental results are summarized as follows :
(1) Bi thin films were prepared reproducibly on BaF_2 single crystal substrate at around 80ﾟC.
(2) Flat surface with layring growth were obtained for films with different thickness from 140*to2800*.
(3) A classical size effect was confirmed for the thickness and temperature dependence of electrical transport for the films with different thickness from 140* to 2800*.
(4) The size quantization with a period of de Broglie wave length was also confirmed.
(5) The metal semiconductor transition was confirmed in the thickness dependence of carriers between 420* and 560*.
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