| Project/Area Number |
06650017
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | MIE UNIVERSITY |
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Principal Investigator |
SUGIYAMA Koichi Mie Univ., Faculty of Engineering, Professor, 工学部, 教授 (20179170)
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| Co-Investigator(Kenkyū-buntansha) |
MIYAKE Hideto Mie Univ., Faculty of Engineering, Assistant, 工学部, 助手 (70209881)
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| Project Period (FY) |
1994 – 1995
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| Project Status |
Completed (Fiscal Year 1995)
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| Budget Amount *help |
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1995: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1994: ¥1,800,000 (Direct Cost: ¥1,800,000)
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| Keywords | chalcopyrite compounds / I-III-VI_2 semiconductors / epitaxial growth / CuAlS_2 / CuGaS_2 / iodine transport method / THM / etching solution / I‐III‐VI_2族半導体 / 回折空間マッピング / I-III-VI_2族半導体 / ハロゲン輸送法 / X線回折空間マッピング / CuAlSe_2 |
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| Research Abstract |
1.Epitaxial growth of CuAlS_2 and CuAl_XGa_<1-X>Se_2 using the closed-tube iodine transport method : Epitaxial growth was performed by 3 steps of (a) reaction of source materials and iodine, (b) cleaning of the substrates, and (c) transport of materials. The iodine concentration was 1mg/cm^3. The source temperatures were 700-750 and 660-700ﾟC for growth of CuAlS_2 and CuAl_XGa_<1-X>Se_2, respectively. The substrates were CuGaS_2 (112) B and CuGaS_2 (112) B.From diffraction space mapping technique, the full widths at half maximum (FWHM) of the X-ray rocking curves were determined to be 100-200 arcsec.
2.Epitaxial growth of CuAl_XGa_<1-X>S_2 using the open-tube iodine transport method : In order to obtain fundamental data for growth of CuAl_XGa_<1-X>S_2 alloy epilayrs, epitaxial growth of CuGaS_2 was performed on CuGaS_2 or CuGa_XIn_<1-X>S_2(1-x-0.02). The source and the substrate temperatures were 800 and 700ﾟC,respectively. The flat epilayrs were obtained by the growth on (112) B substrates with a N_2 flow of 20 cm^3/min and an iodine concentration of 10 mg/cm^3. The FWHMs of the X-ray rocking curves were determined to be 100-200 arcsec.
3.Etching solution for CuGaS_2 crystals : Flatly etched surfaces were obtained by using H_2SO_4 : H_2O_2 : H_2O=5 : 1 : 1 solutions at 100ﾟC.The etching speed for CuGaS_2 (112) B was 1-2mum/min.
4.THM growth of CuGaS_2 crystals : Growth of bulk CuGaS_2 single crystals used for the substrates was performed by the traveling heater method using CuI as a solvent.
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