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CHARACTERIZATION OF CRYSTAL SURFACE LAYERS AND THIN EPITAXIAL FILMS BY X-RAY DIFFRACTION

Research Project

Project/Area Number 06650026
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionOSAKA PREFECTURE UNIVERSITY

Principal Investigator

ITOH Noboru  OSAKA PREFECTURE UNIVERSITY,COLLEGE OF ENGINEERING,LECTURER, 工学部, 講師 (80081305)

Project Period (FY) 1994 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1995: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1994: ¥1,800,000 (Direct Cost: ¥1,800,000)
KeywordsX-ray diffraction / Double-crystal method / Crystallographic characterization / Crystal surface layr / Heteroepitaxial film / Al_xIn_<1-x>N / Epitaxial relationships / Total reflection / InN / 面内方位関係
Research Abstract

For detailed crystallographic characterization of crystal surface layrs, we constructed a measurement system with a high accuracy for the X-ray double-crystal method. We designed the hardware for an angular motion control system and an X-ray detecting system (pulse height analyzer (PHA) and pulse counter), and the software for operation, with our originality. The function of this system includes measurement of rocking curves (omega-mode) and 2rheta-mode. The angular accuracy is within 0.02 arcsec for omega-mode and 0.5 arcsec for 2rheta-mode, which have been improved than in last year. For easy and accurate setting of the sample, some unique functions were added : (I) the hand operation as well as automatic operation are feasible, (2) detecting count numbers are displayd on CRT,and (3) the operator can listen to sound output for detection of X-rays. The details of the hardware and software in this system have been presented in "OYOBUTURI", 65,732 (l996) and "The report of rescarch achi … More evementst".
Crystallographic characterization of some heteroepitaxial films has been made using this equipment and the following knowledge was obtained.
(I) The structure and the in-plane epitaxial relationship of Al_xIn_<1-X>N epitaxial layrs grown onto (0001) alpha-Al_2O_3 substrates-by microwave-excited MOVPE were investigated. The results show that the crystal structure of the epitaxial layr is wurzite structure with a-axis lattice constant and c/a ratio decreasing with increasing of chemical composition X,and the epitaxial relationship is [1010] Al_xIn_<1-x>N/ [1010] alpha-Al_2O_3 as well as (0001) Al_xIn_<1-x>N/ (0001) alpha-Al_2O_3.
(2) As a result of investigating ZnSe/GaAs (100), InGaP/GaAs (100), cap-GaAs/InGaP/GaAs (100), and cap-GaAs/AlGaAs/GaAs (100) heterostructure, intensity oscillation in rocking curves is observed only for the epitaxial films with high crystalline quality. This oscillation is attributed to some dynamical diffraction effect of X-rays.
(3) Since the constructed equipment enables us to measure total reflection of X-rays, we wish to apply this ability to characterization of crystal surface, for the future. Less

Report

(3 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • Research Products

    (11 results)

All Other

All Publications (11 results)

  • [Publications] Q.X.Guo, T.Yamamura, A.Yoshida and N.Itoh: "Structural properties of InN films grown on sapphire substrates by microwave-excited metalorganic wapor-phase epitaxy" J.Appl.Phys.75. 4927-4932 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] S.Nozaki, H.Nakamura, H.Ono, H.Morisaki and N.Itoh: "Visible Light Emission from the Silicon-Doped SiO2 Thin Film Deposited by Sputtering" Jpn.J.Appl.Phys.34-1. 122-124 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] O.X.Guo, N.Itoh, H.Ogawa and A.Yoshida: "Crystal Structure and Orientation of Al_xIn_<1-x>N Epitaxial Layers Grown on (0001)α-Al_2O_3 Substrates" Jpn.J.Appl.Phys.34. 4653-4657 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 伊藤 進夫: "X線二結晶法による半導体結晶表面層の評価" 応用物理. 65. 732-736 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Qi-Xin Guo, Toshimi Yamamura, Akira Yoshida and Nobuo Itoh: ""Structural properties of In N films grown on sapphire substrates by microwave-excited metalorganic vapor-phase epitaxy"" J.Appl.Phys.75-10. 4927-4932 (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Shinji Nozaki, Hitoshi Nakamura, Hiroshi Ono, Hiroshi Morisaki and Nobuo Itoh: ""Visible Light Emission from the Silicon-Doped SiO_2 Thin Film Deposited by Sputtering"" Jpn.J.Appl.Phys.34 (Suppl.34-1). 122-124 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Qi-Xin Guo, Nobuo Itoh, Hiroshi Ogawa and Akira Yoshida: ""Crystal Structure and Orientation of Al_xIn_<1-x>N Epitaxial Layrs Grown on (0001) alpha-Al_2O_3 Substrates"" Jpn.J.Appl.Phys.34-9A. 4653-4657 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Nobuo Itoh: ""Characterization of Semiconductor Crystal Surface layrs by X-Ray Double-Crystal Method (in Japanese) "" OYO BUTURI. 65-7. 732-736 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Qi-Xin Guo: "Crystal Structure and Orientation of Al_xIn_<1-x>N Epitaxial Layers Grown on (0001)α-Al_2O_3 Substrates" Japanese Journal of Applied Physics. 34. 4653-4657 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Qi-Xin Guo: "Structural properties of InN films grown on sapphire substrates by microwave-excited metalorganic vapor-phase epitaxy" Journal of Applied Physics. 75. 4927-4932 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] Shinji Nozaki: "Visible Light Emission from theSilicon-Doped Sio Thin Film Deposited by Sputtering" Japanese Journal of Applied Physics Supplements. No.34-1. (1995)

    • Related Report
      1994 Annual Research Report

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Published: 1994-04-01   Modified: 2016-04-21  

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