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Growth of Silicon Thin Film on Si (111)-CaF_2 for the Measurement of Surface Electronic Properties

Research Project

Project/Area Number 06650038
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 表面界面物性
Research InstitutionTokyo Institute of Technology

Principal Investigator

TANISHIRO Yasumasa  Tokyo Institute of Technology, Physics department, Research associate, 理学部, 助手 (40143648)

Project Period (FY) 1994 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 1995: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1994: ¥1,000,000 (Direct Cost: ¥1,000,000)
Keywordssilicon / CaF_2 / SOI / surface and interface / epitaxial growth / RHEED / シリコン
Research Abstract

Epitaxial growth of silicon thin crystal film on silicon (111) substrate which had been covered with calcium fluoride (CaF_2) insulator film has been studied by RHEED (Reflection High Energy Electron Diffraction), SEM (Scanning Electron Microscopy) and SAM (Scanning Auger Microprobe). CaF_2 film is grown epitaxially on Si (111) 7x7 surface at 600゚C in antiparallel orientation to the substrate crystral. Two-stage growth method has been developed to grow a silicon thin crystal film on the Si (111)-CaF_2 : A few bilayrs of silicon were deposited initially at room temperature and then the specimen was heated up to 600゚C for the growing silicon film to have good crystallinity. The orientation of growing silicon crystal film is parallel to CaF_2 crystal and antiparallel to the substrate silicon crystal. It was found that electron beam irradiation of CaF_2 surface using the RHEED probe at room temperature made the growing silicon film more uniform and suppress the reactivity between silicon a … More nd CaF_2 at 600゚C.However, the surface of the growing silicon film did not exhibit the 7x7 structure of the clean Si (111) surface, but the 1x1 structure due to the presence of a small amount of calcium on the surface. It was found from the depth profile measurement using SAM that calcium adsorbates can be removed from the surface by 500eV Ar ion sputtering with glancing angle of 30゚ at room temperature and the impurity elements were not incorporated in the growing silicon film. On the other hand, it was shown by preliminary annealing experiments that the 7x7 structure appeared on the surface of the growing silicon film in antiparallel orientation to the silicon substrate crystal after annealing at 1000゚C,while the insulating CaF_2 film was thinned and disappered locally. These results strongly suggest that silicon thin films with clean surfaces can be obtained using the electron beam irradiation of CaF_2 surface and the two-stage growth method followed by low-energy ion sputtering with grazing incidence and moderate annealing. Less

Report

(3 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • Research Products

    (15 results)

All Other

All Publications (15 results)

  • [Publications] Y.Tanishiro: "Dynamic Observation of In Adsorption on Si (111) by UHV-HT STM" Surface Sci.357/358. 407-413 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Minoda: "In Situ TEM Observation of Surfactant-Mediated Epitaxy" Surface Sci.357/358. 418-421 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Minoda: "REM and TEM Studies of Thin Film Growth Dynamics on Si Surfaces" Mat.Res.Soc.Symp.Proc.404. 131-141 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A.V.Latyshev: "UHVREM Investigation of Interaction Between Step & Dislocation on Si (111)" Surface Sci.357/358. 550-554 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Suzuki: "REM Study of High Index Si (5 5 12) Flat Surfaces" Surface Sci.348. 335-343 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Tamura: "Studies of Surface Stress by REM and TEM" Surface Sci.357/358. 576-580 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Y.Tanishiro, K.Kaneko, H.Minoda, K.Yagi, T.Sueyoshi, T.Sato and M.Iwatsuki: "Dynamic Observation of In Adsorption on Si (111) by UHV High-yemperature Scanning Tunneling Microscopy." Surface Science. 357/358. 407-413 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Minoda, Y.Tanishiro, N.Yamamoto and K.Yagi: "In situ TEM Observation of Surfactant-mediated Epitaxy : Growth of Ge on an Si (111) Surface Mediated by in." Surface Science. 357/358. 418-421 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Minoda, Y.Tanishiro and K.Yagi: "REM and TEM Studies of Thin Film Growth Dynamics on Si Surfaces." Mat.Res.Soc.Symp.Proc.404. 131-141 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] A.V.Latyshev, H.Minoda, Y.Tanishiro and K.Yagi: "UHV REM Investigation of the Interaction Between Step and Dislocation on Silicon (111) Surface." Surface Science. 357/358. 550-554 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] H.Tamura, K.Nishii, H.Minoda, Y.Tanishiro and K.Yagi: "Studies of Surface Stress by Reflection Electron Microscopy and Transmisiion Electron Microscopy." Surface Science. 357/358. 576-580 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Suzuki, H.Minoda, Y.Tanishiro and K.Yagi: "REM Study of High Index Si (5 5 12) Flat Surfaces" Surface Science. 348. 335-343 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Y.Tanishiro: "Dynamic Observation of Adsorption on Si(111)Surface by UHV High-temperature STM" in Proc. ICSS-9, Surface Sci.,. (in press).

    • Related Report
      1995 Annual Research Report
  • [Publications] H.Minoda: "REM and TEM Studies of Thin Film Growth Dynamics on Si Surfaces" in MRS Proceedings. (in press).

    • Related Report
      1995 Annual Research Report
  • [Publications] T.Senoh: "Indirect Heating Specimen Holder for REM Studies of Current Effects on S-Surfaces" Proc,of the 13th International Cong.on Electron Microscopy. 2B. 1029-1030 (1994)

    • Related Report
      1994 Annual Research Report

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Published: 1994-04-01   Modified: 2016-04-21  

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