| Project/Area Number |
06650061
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | KANAZAWA INSTITUTE OF TECHNOLOGY |
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Principal Investigator |
TAKATA Shinzo KANAZAWA INSTITUTE OF TECHNOLOGY, DEPARTMENT OF ELECTRICAL ENGINEERING, PROFESSOR, 工学部, 教授 (70064467)
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| Co-Investigator(Kenkyū-buntansha) |
MINAMI Tadatsugu KANAZAWA INSTITUTE OF TECHNOLOGY, DEPARTMENT OF ELECTRICAL ENGINEERING, PROFESSO, 工学部, 教授 (70113032)
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| Project Period (FY) |
1994 – 1995
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| Project Status |
Completed (Fiscal Year 1995)
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| Budget Amount *help |
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1995: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1994: ¥1,200,000 (Direct Cost: ¥1,200,000)
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| Keywords | Thin Film Electroluminescence / Oxide phosphor / Ceramic EL Devices / Blue-Light Emission EL Devices / Zinc-silicate / Zinc-Gallate / 青色EL / 薄膜EL / エレクトロルミネッセンス / 酸化物蛍光体発光層 / 青色発光TFEL素子 / Zn_2SiO_4:Ti / Y_2SiO_5:Ce / CVD |
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| Research Abstract |
Purpose and results of this project are shown as follows.
It will be carried out that thin film electroluminescent devices using an oxide-phosphor, Zn_2SiO_4 : Ti or ZnGa_2O_4, emitting layr prepared on a BaTiO_3 ceramic insulating layr as well as substrate emitts a high luminance of blue light from the low -drivig voltage.
1) It is possible that various dopants can be introduced into the same host materials of Zn_2SiO_4 or ZnGa_2O_4.
2) These hosts are promising materials as the blue, green or red emiting layr of EL devices.
3) As-deposited Zn_2SiO_4 : Ti emitting layr prepared by magnetron sputtering do not emitts because the layr may include non-rediative centers. Consequently, the layr was needed post-annealing at high temperature.
4) It is difficult to prepare Zn_2SiO_4 host with a excellent crystallinity by chemical vapor deposition because SiO_2 always become amorphous in the ZnO-SiO_2. But CVD grown, for example, Zn_2SiO_4 : Mn emitts green lieht even EL devices with as-deposited emitting layr.
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