| Project/Area Number |
06650360
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Fukui University |
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Principal Investigator |
YAMAMOTO Akio Fukui University, Faculty of Engineering, Professor, 工学部, 教授 (90210517)
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| Co-Investigator(Kenkyū-buntansha) |
HASHIMOTO Akihiro Fukui University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (10251985)
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| Project Period (FY) |
1994 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 1996: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1995: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1994: ¥800,000 (Direct Cost: ¥800,000)
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| Keywords | InN / Si / GaAs / GaN / nitridation / heteroepitaxy / MOCVD growth / tandem solar cell |
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| Research Abstract |
The purpose of this study is to grow high-quality InN films on Si substrates, and on the basis of that, to clarify the possibility of the fabrication of InN/Si tandem solar cell. Results obtained through the study are summarized as follows ;
(1) MOCVD growth of InN directly on Si substrate
Growth of InN directly on Si by using MOCVD method with TMI and NH_3 is unsuccessful because of the formation of amorphous-phase SiN_X on the Si substrate.
(2) Nitridation of GaAs surfaces and MOCVD growth of InN on the nitrided GaAs surfaces
A GaN layr is formed on GaAs (111) B substrates when the substrate is annealed at 600-900ﾟC in the flowing NH_3. The structure of GaN layr is zincblende-type for the nitridation temperature lower than 700ﾟC and wurtzite-type for the nitridation temperature higher than 800ﾟC.A wurtzite InN layr is epitaxially grown on the wurtzite GaN layr, while on the zincblende GaN layr a zincblende InN is grown only at the initial stage of the growth and the growth of wurtzite InN becomes dominant as the thickness increases. A zincblende GaN layr is formed on GaAs (100) substrates after the nitridation at 600-1000ﾟC.An InN layr grown on GaAs (100) substrates covered with a zincblende GaN layr is composed of both zincblende and wurtzite phases.
(3) Heteroepitaxial growth of InN on Si (111) substrates using a nitrided GaAs buffer layr
By using a nitrided GaAs (111) layr grown on Si (111) substrate as a buffer layr, two types of heterostructure, InN/GaN/Si (111) and InN/GaN/GaAs/Si (111), are obtained. The former can be used for InN/Si two-junction tandem solar cell and the latter for InN/GaAs/Si three-junction tandem solar cell.
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