| Project/Area Number |
06650372
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| Research Category |
Grant-in-Aid for General Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Musashi Institute of Technology |
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Principal Investigator |
AKIYA Masahiro Musashi Institute of Technology, Professor, 工学部, 教授 (60231833)
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| Project Period (FY) |
1994 – 1996
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| Project Status |
Completed (Fiscal Year 1995)
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| Budget Amount *help |
¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 1995: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1994: ¥1,600,000 (Direct Cost: ¥1,600,000)
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| Keywords | Mg containing Al-Si alloys / Electromigration / Void / Activation energy / Langmuir-Blodgett film / 三元合金膜 / エレクトロマイグレーション / 絶縁膜 |
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| Research Abstract |
Silicon nitride (SiN) overcoating and dielectric-covered 1.6%-Mg containing Al-Si films have been investigated for electromigration resistance. SiN passivated films were more effective for increasing electromigration resistance than dielectrics-covered films. Furthermore, the dielectrics-covered films with Al_<>O_3 or MgO also improved the lifetime and enhance the activation energy. The increase of void and an void expansion to depth direction were closely related to resistance rise in lifetime test. The samples for overcoating LB films was destroyed by temperature during lifetime test, and enough effect wasn't able to be observed.
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