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Application of Iron-doped GaAs to Optically-Controlled Variable Resistors

Research Project

Project/Area Number 06650395
Research Category

Grant-in-Aid for General Scientific Research (C)

Allocation TypeSingle-year Grants
Research Field 電子デバイス・機器工学
Research InstitutionToyota Technological Institute

Principal Investigator

OHSAWA Jun  Toyota Technological Institute, Associate Professor, 工学部, 助教授 (20176861)

Co-Investigator(Kenkyū-buntansha) TSUCHIDA Nuio  Toyota Technological Institute, Professor, 工学部, 教授 (40023246)
Project Period (FY) 1994 – 1995
Project Status Completed (Fiscal Year 1995)
Budget Amount *help
¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 1995: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1994: ¥1,600,000 (Direct Cost: ¥1,600,000)
KeywordsOptically-Controlled Variable Resistor / Charge Storage / Gallium Arsenide / Diffusion of Iron / PN Junction / 応用範囲を広げるには、漏れ電流をさらに低減して高抵抗化の持続時間を延ばす必要がある。また、本素子の構造は高速光検出器として応用できる可能性があり、今後高速応答特性や感度について検討する予定である。
Research Abstract

In the first year, GaAs diodes of pi/n^+ structure were fabricated by use of overcompensation of donors by diffused iron deep acceptors. Meanwhile, iron concentrations in the diffused regions were analyzed. The depth profiles are remarkably flat and the concentration ranges from 10^<15> to 10^<17>A/cm^3 depending on the diffusion temperature of 650-900゚C,which result have been published in the Japanese Journal of Applied Physics. Selective inversion of conductivity type by iron-diffusion was successful to produce a pi/n^+/pi structure for the present device.
In the second year, diodes with lower iron concentration were fabricated from bulk and epitaxial GaAs materials, and their current-voltage characteristics were examined. Leakage current as low as 1x10^<-9> A/cm^2 and high breakdown voltage over 500 V were realized, but the junction characteristics were found to depend strongly on the starting material. These considerations resulted in a pi/n^+/pi mesa structure with a pair of interdital electrodes on the surfaces and a back electrode to temporarily bias the device. The resistance of the surface pi-layr changes by a factor over 10 after the structure is biased, and recovers to the initial value when weakly illuminated. The high-resistance state caused by the stored charge in the layred structure decays in a few minutes, which limits its application to dynamic operations.
To further extend its applicability, the charge storage time must be increased by reducing the leakage current. Also, the present study suggests that a similar structure may be a candidate for an ultra-fast photodetector, which will be under investigation soon.

Report

(3 results)
  • 1995 Annual Research Report   Final Research Report Summary
  • 1994 Annual Research Report
  • Research Products

    (37 results)

All Other

All Publications (37 results)

  • [Publications] J. Ohsawa: "Iron Concentrations in GaAs diffused form a Spin-on film" Japanese Journal of Applied Physics. 34. L600-L602 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] J. Ohsawa: "Fast Photoconductive Photodetectors Employing Iron-Diffusion into Epitaxial GaAs" Abstracts of International Conference on Applications of Photonic Technology. (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 松葉 知佳: "Fe拡散GaAs pn接合ダイオードの検討" 第41回応用物理学関係連合講演会講演予稿集. 1159 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 松葉 知佳: "Fe拡散GaAs pn 接合ダイオードの検討(2)" 第55回応用物理学会学術講演会講演予稿集. 1074 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 根角,昌信: "Fe拡散GaAs層を用いた高速光伝導型光検出器" 第55回応用物理学会学術講演会講演予稿集. 905 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 片山 典浩: "Fe拡散GaAs層を用いた高速光伝導型光検出器" 第55回応用物理学会学術講演会講演予稿集. 905 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 根角,昌信: "Fe拡散GaAs層を用いた高速MSM光検出器における暗電流" 第42回応用物理学関係連合講演会講演予稿集. 1065 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 斉藤 康博: "Fe拡散GaAs pn接合ダイオードの特性" 平成7年度電気関係学会東海支部連合大会講演論文集. 207 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 片山 典浩: "Fe拡散GaAs層を用いた高速光検出器" 平成7年度電気関係学会東海支部連合大会講演論文集. 207 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 片山 典浩: "Fe拡散p形GaAsへのショットキ接触のFe濃度依存性" 第43回応用物理学関係連合講演会講演予稿集. (予定). (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] G. A. Lampropoulos et al. 編(大澤ほか): "Applications of Photonic Technology" Plenum Press, New York (Plenum Publishing Corp.), 566 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] 電子デバイス活用辞典編集委員会編(大澤ほか): "電子デバイス活用辞典" 工業調査会, 348 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] マイクロマシン研究会編(土田ほか): "ミクロをめざすニューアクチュエータ(新原理で次世代を拓く)" 工業調査会, 210 (1994)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] J.Ohsawa: "Iron Concentrations in GaAs Diffused from a Spin-on Film" Japanese Journal of Applied Physics. Vol.34, No.5B. L600-L602 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] J.Ohsawa: "Fast Photoconductive Photodetectors Employing Iron-Diffusion into Epitaxial GaAs" Abstracts of International Conference on Applications of Photonic Technology. (1994)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Matsuba: "Iron-Diffused GaAs PN Junction Diodes" Extended Abstracts (The 41th Spring Meeting, 1994) ; The Japan Society of Applied Physics and Related Societies. 1159

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] T.Matsuba: "Iron-Diffused GaAs PN Junction Diodes (2)" Extended Abstracts (The 55th Autum Meeting, 1994) : The Japan Society of Applied Physics. 1074

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Nekado: "Fast Photoconductive Photodetectors on Iron-Diffused GaAs (2)" Extended Abstracts (The 55th Autum Meeting, 1994) ; The Japan Society of Applied Physics. 1074

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N.Katayama: " Fast Photoconductive Photodetectors on Iron-Diffused GaAs (3)" Extended Abstracts (The 55th Autum Meeting, 1994) ; The Japan Society of Applied Physics. 1074

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] M.Nekado: "Dark Current in MSM Photodetectors on Iron-Diffused GaAs" Extended Abstracts (The 42th Spring Meeting, 1994) ; The Japan Society of Applied Physics and Related Socities. 1965

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] Y.Saito: "Characteristics of Iron-Diffused GaAs PN Junction Diodes" 1995 Tokai-Section Joint Convention Record of The Six Institutes of Electrical and Related Engineers. 207

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N.Katayama: "Fast Photoconductive Photodetectors on Iron-Diffused GaAs" 1995 Tokai-Section Joint Convention Record of The Six Institutes of Electrical and Related Engineers. 207

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] N.Katayama: "Iron-Concentration Dependence of Schottky Contact to Iron-Diffused p-GaAs" Extended Abstracts (The 43th Spring Meeting, 1994) ; The Japan Society of Applied Physics and Related Societies.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] J.Ohsawa: "Fast Photoconductive Photodetectors Employing Iron-Diffusion into Epitaxial GaAs" Applications of Photonic Technology, ed.by G.A.Lampropoulos et al., Plenum Press, New York. (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1995 Final Research Report Summary
  • [Publications] J. Ohsawa: "Iron Concentrations in GaAs Diffused from a Spin-on Film" Japanese Journal of Applied Physics. 34. L600-L602 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 斉藤 康博: "Fe拡散GaAs pn接合ダイオードの特性" 平成7年度電気関係学会東海支部連合大会講演論文集. 207 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 片山典浩: "Fe拡散GaAs層を用いた高速光検出器" 平成7年度電気関係学会東海支部連合大会講演論文集. 207 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 片山 典浩: "Fe拡散P形GaAsへのショットキ接触のFe濃度依存性" 第43回応用物理学関係連合講演会講演予稿集. (予定). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] G. A. Lampropoulos et al. 編(大澤ほか): "Applications of Photonic Technology" Plenum Press, New York(Plenum Publishing Corp.), 566 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] J.Ohsawa: "Fast Photoconductive Photodetectors Employing Iron-Diffusion into Epitaxial GaAs" Abstracts of International Conference on Applications of Photonic Technology. (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 松葉 知佳: "Fe拡散GaAs pn接合ダイオードの検討" 第41回応用物理学関係連合講演会講演予稿集. 1159 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 松葉 知佳: "Fe拡散GaAs pn接合ダイオードの検討(2)" 第55回応用物理学会学術講演会講演予稿集. 1074 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 根角 昌伸: "Fe拡散GaAs層を用いた高速光伝導型光検出器(2)" 第55回応用物理学会学術講演会講演予稿集. 905 (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 片山 典浩: "Fe拡散GaAs層を用いた高速光伝導型光検出器(3)" 第55回応用物理学会学術講演会講演予稿集. 905- (1994)

    • Related Report
      1994 Annual Research Report
  • [Publications] 根角 昌伸: "Fe拡散GaAs層を用いた高速MSM光検出器における暗電流" 第42回応用物理学関係連合講演会講演予稿集. (予定). (1995)

    • Related Report
      1994 Annual Research Report
  • [Publications] マイクロマシン研究会編(土田ほか): "ミクロをめざすニューアクチュエータ(新原理で次世代を拓く)" 工業調査会, 210

    • Related Report
      1994 Annual Research Report
  • [Publications] 電子デバイス活用辞典編集委員会編(大澤ほか): "電子デバイス活用辞典" 工業調査会, 348

    • Related Report
      1994 Annual Research Report

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Published: 1994-04-01   Modified: 2016-04-21  

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