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HIGH PERFORMANCE DEVICES FOR GIGASCALE INTEGRATED SYSTEMS

Research Project

Project/Area Number 07044111
Research Category

Grant-in-Aid for international Scientific Research

Allocation TypeSingle-year Grants
SectionJoint Research
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

OHMI Tadahiro  FACULTY OF ENGINEERING,TOHOKU UNIVERSITY,Professor, 工学部, 教授 (20016463)

Co-Investigator(Kenkyū-buntansha) SHIBATA Tadashi  FACULTY OF ENGINEERING,TOHOKU UNIVERSITY, 工学部, 助教授 (00187402)
MEINDL James D  SCHOOL OF ELECTRICAL & COMPUTER ENGINEERING, GEORGIA INSTITUTE OF TECHNOLOGY, 電子及び計算機工学科, 教授
Project Period (FY) 1995 – 1996
Project Status Completed (Fiscal Year 1996)
Budget Amount *help
¥5,300,000 (Direct Cost: ¥5,300,000)
Fiscal Year 1996: ¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 1995: ¥2,600,000 (Direct Cost: ¥2,600,000)
KeywordsGSI / FOUR-TERMINAL DEVICE / INTELLIGENT ELECTRONIC SYSTEM / LOW POWER / NEURON-MOS / 動きベクトル検出 / 重心検出
Research Abstract

1. High Functional LSI and Gigascale Integrated System realized by four-terminal device
We have realized elemental circuits for an intelligent electronic system by using a four-terminal device, Neuron-MOS (vMOS), as an elemental device. Test circuits were designed, fabricated and evaluated by the measurement of fabricated test circuits.
Real-time motion-vector detector and real-time center-of-mass tracer circuit have been developed by using vMOS.High-speed and high-accuracy analog non-volatile memory, vMOS correlator based on Manhattan distance computation, vMOS winner-take-all circuit, which are the key elements of intelligent event-recognition hardware, have been developed. By using the same architecture as the event-recognition hardware, we have developed a vector quantization (VQ) processor chip for real-time motion picture compression using digital circuit technology. The VQ chip exhibits 1,000 times superior speed performance compared to software realization using a microprocessor … More (Pentium 166MHz).
2. Low Power Device / Circuit Technology for Gigascale Integration
Low power operation of the circuit is essential for gigascale integration. We have developed two new low-power circuit schemes for vMOS.One is a sense-amp vMOS logic circuit scheme, which is developed by applying a sense-amplifier to the vMOS logic decision circuit. The other is a deep-threshold vMOS scheme, in which deep threshold transistors and effectively-designed buffer circuit are utilized. Ta-gate SOI-MOSFET which exhibits high performance even with a 1V power supply has been developed. Extremely-low-power adiabatic logic circuit scheme has also been developed for the gigascale integrated circuit.
3. Limit to the gigascale integration
Opportunities for gigascale integration are governed by a hierarchy of physical limits whose five levels can be classified as : fundamental, material, device, circuit, and system. This distinctive methodology is extended by elucidating the impact on gigascale integration of random dopant atom placement in the channel region of a MOSFET.
4. Optimization of the system configuration
Based on a newly derived complete stochastic interconnect distribution, an optimal wiring network architecture is defined that minimizes chip area and power dissipation. Less

Report

(3 results)
  • 1996 Annual Research Report   Final Research Report Summary
  • 1995 Annual Research Report
  • Research Products

    (19 results)

All Other

All Publications (19 results)

  • [Publications] T.Shibata,H.Kosaka,H.Ishii and Tadahiro Ohmi: "A Neuron-MOS Neural Network Using Self-Leanring-Compatible Synapse Circuits" IEEE Journal of Solid-State Circuits. 30・8. 913-922 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Koji Kotani,Tadashi Shibata and Tadahiro Ohmi: "Impact of High-Precision Processing on the Functional Enhancement of Neuron-MOS Integrated Circuits" IEICE Transactions on Electronics. E79-C・3. 407-414 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Hisayuki Shimada and Tadahiro Ohmi: "Current Drive Enhancement by Using High-Permittivity Gate Insulator in SOI MOSFET's and Its Limitation" IEEE Transactions on Electron Devices. 43・3. 431-435 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Tadashi Shibata and Tadahiro Ohmi: "Implementing Intelligence in Silicon Integrated Circuits Using Neuron-Like High-Functionality Transistors" Journal of Robotics and Mechatronics. 8・6. 508-515 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Ho-Yup Kwon,Koji Kotani,Tadashi Shibata,and Tadahiro Ohmi: "Low Power Neuron-MOS Technology for High-Functionality Logic Gate Synthesis" IEICE Transactions on Electronics. (発表予定).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Shibata, H.Kosaka, H.Ishii and Tadahiro Ohmi: "A Neuron-MOS Neural Network Using Self-Learning-Compatible Synapse Circuits" IEEE Journal of Solid-State Circuits. 30. 913-922 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Koji Kotani, Tadashi Shibata and Tadahiro Ohmi: "Impact of High-Precision Processing on the Functional Enhancement of Neuron-MOS Integrated Circuits" IEICE Trans.Electron.E79-C. 407-414 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Hisayuki Shimada and Tadahiro Ohmi: "Current Drive Enhancement by Using High-Permittivity Gate Insulator in SOI MOSFET's and ItsLimitation" IEEE Trans.on Electron Devices. 43. 431-435 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Tadashi Shibata and Tadahiro Ohmi: "Implementing Intelligence in Silicon Integrated Circuits Using Neuron-Like High-Functionality Transistors" Journal of Robotics and Mechatronics. 8. 508-515 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Ho-Yup Kwon, Koji Kotani, Tadashi Shibata, and Tadahiro Ohmi: "Low Power Neuron-MOS Technology for High-Functionality Logic Gate Synthesis (TO BE PUBLISHED)" IEICE Trans.Electron.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Hisayuki Shimada and Tadahiro Ohmi: "Current Drive Enhancement by Using High-Permittivity Gate Insulator in SOI MOSFET's and Its Limitation" IEEE Trans. on Electron Devices. 43・3. 431-435 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Tadashi Shibata and Tadahiro Ohmi: "Implementing Intelligence in Silicon Integrated Circuits Using Neuron-Like Higy-Functionality Transistors" Journal of Robotics and Mechatronics. 8・6. 508-515 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Ho-Yup Kwon,Koji Kotani,Tadashi Shibata,and Tadahiro Ohmi: "Low Power Neuron-MOS Technology for High-Functionality Logic Gate Synthesis" IEICE Trans. Electron.(発表予定).

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Ohmi: "Four-Terminal Device Electronics for Intelligent Silicon Integrated System" Ext. Abst., 1995 Int. Conf. on Solid State Devices and Materials. 1-3 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] T.Ohmi: "Intelligence Implementation on Silicon Based on Four-Terminal Device Electronics" Proc., 20th Int. Conf. on Microelectronics. 1. 11-18 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] T.Shibata: "A Neuron-MOS Neural Network Using Self-Learning-Compatible Synapse Circuits" IEEE J. Solid-State Circuits. 30. 913-922 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] T.Shibata: "Advances in Neuron-MOS Applications" Dig. Tech. Papers, 1996 Int. Solid-State Circ. Conf.304-305 (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] 小谷光司: "自動しきい値調整機能を用いたクロック制御ニューロンMOS論理回路" 電子情報通信学会技術報告. 95. 57-64 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Kotani: "Impact of High-Precision Processing on the Functional Enharce ment of Neuron-MOS Integrated Circuits" IEICE Trans. Electron.E79-C. (1996)

    • Related Report
      1995 Annual Research Report

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Published: 1995-04-01   Modified: 2016-04-21  

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