Heteroepitaxial Mechanism of Ouantum-Effect Semiconductors
| Project/Area Number |
07044142
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| Research Category |
Grant-in-Aid for international Scientific Research
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| Allocation Type | Single-year Grants |
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| Section | Joint Research |
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| Research Institution | KYOTO UNIVERSITY |
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Principal Investigator |
SASAKI Akio Dept. of Electronic Sci. & Eng., Kyoto Univ.Professor, 工学研究科, 教授 (10025900)
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| Co-Investigator(Kenkyū-buntansha) |
LILIEBTALーWE ウェーバ ゼット ローレンス, バークレイ研究科・物質科学研究部門, 主管研究員
WEBER Eicke r. Dept. Materials Sci. & Mineral Eng., UC Berkeley, バークレイ校・物質科学鉱物工学科, 教授
WAKAHARA Akihiro Dept. of Electronic Sci. & Eng., Kyoto Univ., 工学研究科, 助手 (00230912)
LILIENTAL-WEBER Z. Lawrence Berkeley Lab.
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| Project Period (FY) |
1995
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| Project Status |
Completed (Fiscal Year 1995)
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| Budget Amount *help |
¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 1995: ¥3,000,000 (Direct Cost: ¥3,000,000)
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| Keywords | heteroepitaxy / Stranski-krastanor mode / transition thickness / self-assemble / quantum-dot |
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| Research Abstract |
We have investigated the heteropitaxial mechanism of GaAs/InAs/GaAs self-assembled quantum structure by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HR-TEM), and photoluminescence measurement. For multi-stacked GaAs/InAs/GaAs structure, 1) 100A-thick GaAs layr is required to embed the InAs dots, 2) InAs quantum dots are formed on the InAs dots exist under the GaAs barrier layrs, 3) luminescence due to higher quantum-level in the InAs quantum dots can be observed under the high excitation condition. Initial stage of GaInN/GaN heteroepitaxy also investigated to achieve an nitride based quantum-dots. From the theoretical approach, strain distribution and transition thickness of 2D to 3D transition for self-assembled quantum dots are carried out by using numerical calculation based on the valence-force-field model. We have successfully obtained a general law of transition thickness by analytical approach.
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Report
(1 results)
Research Products
(6 results)
