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Physics and Application of Spin-Related Phenomena in Semiconductors

Research Project

Project/Area Number 07305011
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section総合
Research Field Electronic materials/Electric materials
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

OHNO Hideo  Tohoku University, Research Inst.of Electrical Communication, Professor, 電気通信研究所, 教授 (00152215)

Co-Investigator(Kenkyū-buntansha) MUNEKATA Hiroo  Tokyo Institute of Technilogy, Associate Professor, 工学部, 助教授 (60270922)
TEKEYAMA Shyojirou  Faculty of Science, Himeji Institute of Technology, Associate Professor, 理学部, 助教授 (20163446)
IYE Yasuhiro  Institute for Solid Physics, University of Tokyo, Professor, 物性研究所, 教授 (30125984)
YOSHIDA Hiroshi  Institute of Scientific and Industrial Research, Osaka University, Professor, 産業科学研究所, 教授 (30133929)
YOSHINO Junji  Department of Physics, Tokyo Instisute of Technology, Professor, 理学部, 教授 (90158486)
Project Period (FY) 1995 – 1996
Project Status Completed (Fiscal Year 1996)
Budget Amount *help
¥4,400,000 (Direct Cost: ¥4,400,000)
Fiscal Year 1996: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1995: ¥2,200,000 (Direct Cost: ¥2,200,000)
KeywordsSemiconductor quantum structures / Electron spin / III-V compound semiconductors / II-VI compound semiconductors / epitaxial growth / ferromagnetic materials / Quantum size effect / Exchange interaction / III-VI族化合物半導体 / II-V族化合物半導体
Research Abstract

Expermental as well as theoretical research on spin related phenomena in semiconductor quantum structures has been conducted in order to establish (1) fabrication processes of semiconductor quantum structures with pronounced spin effects.(2) understanding of the spin related phenomena in such structures, and (3) possible application of the semiconductor quantum structures using the new degree of freedom related to spin of electrons. Two Symposia named "Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors" were held at the Research Institute of Electrical Communication, Tohoku University on December 20-21,1995, and at the Sendai International Center on January 27-28,1997 in an effort to bridge the gap between the Semiconductor Materials and the Magnetic Materials. Following results are among those the research results obtained in the course of the present project.
(1) Epitaxial growth of magnetic materials on Si
(2) A new III-V based ferromagnetic diluted magnetic semiconductor, (GA,Mn)As
(3) Control of exchange interaction among magnetic ions by semiconductor nanostructures
(4) Experimental verification of the existence of free magnetic polarons

Report

(3 results)
  • 1996 Annual Research Report   Final Research Report Summary
  • 1995 Annual Research Report
  • Research Products

    (39 results)

All Other

All Publications (39 results)

  • [Publications] H.Ohno: "(Ga,Mn)As:A new diluted magnetic semiconductor based on GaAs" Applied Physics Letters. 69. 363-365 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Ohno: "Ferromagnetic order in(Ga,Mn)As/GaAs heterostructures" Proc.23rd.Int.Conf.Physics of Semiconductors. 405-408 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Shen: "(Ga,Mn)As/GaAs diluted megnetic semiconductor superlattice structures prepared by molecular beam epitaxy" Jpn.J.Appl.Phys. 36. L73-L75 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] F.Matsukura: "Growth and properties of(Ga,Mn)As:a new III-V diluted magnetic semiconductor" Applied Surface Science. (accepted for publication). (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Shen: "Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures" Applied Surface Science. (accepted for publication). (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Shen: "Epitaxy of(Ga,Mn)As,a new diluted magnetic semiconductor based on GaAs" J.Crystal Growth. (accepted for publication). (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] S.Adachi: "Ultrafast optical sampling spectroscopy of exciton dynamics in quantum wells" Prog.Crystal Growth and Charact.33. 3307-3310 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Y.Soo: "III-V diluted magnetic semiconducotr:Substitutional doping of Mn in InAs" Physical Review B. 53. 4905-4909 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Y.Iye: "Magnetotransport in modulated magnetic fields" Physica B. 227. 122-126 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Y.Oka: "Excitonic properties of nanostructure semimagnetic semiconductors" J.Luminescence. 70. 35-47 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Hirakawa: "Coherent submillimeter-wave emission from non-equilibrium two-dimensional free carrier plasmas in AlGaAs/GaAs heterojunctions" Surf.Sci.361/362. 368-371 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Ohno, (Ga, Mn)As :"A new diluted magnetic semiconductor based on GaAs" Applied Physics Letters. 69. 363-365 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Ohno: "Ferromagnetic order in(Ga, Mn) As/GaAs heterostructures" Proc.23^<rd>. Int.Conf.Physics of Semiconductors. 405-408 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Shen: "(Ga, Mn)As/GaAs diluted megnetic semiconductor superlattice structures prepared by molecular beam epitaxy" Jpn.J.Appl.Phys.36. L73-L75 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] F.Matsukura: "Growth and properties of(Ga, Mn) As : a new III-V diluted magnetic semiconductor" Applied Surface Science. (accepted for Publication). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Shen: "Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures" Applied surface Science. (accepted for Publication). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Shen: "Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs" J.Crystal Growth. (accepted for Publication). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] S.Adachi: "Ultrafast optical sampling spectroscopy of exciton dynamics in quantum wells" Prog.Crystal Growth and Charact. 33. 3307-3310 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Y.Soo: "III-V diluted magnetic semiconductor : Substitutional doping of Mn in InAs" Physical Review B. 53. 4905-4909 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Y.Iye: "Magnetotransport in modulated magnetic fields" Physica B. 227. 122-126 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Y.Oka: "Excitonic properties of nanostructure semimagnetic semiconductors" J.Luminescence. 70. 35-47 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Hirakawa: "Coherent submillimeter-wave emission from non-equilibrium two-dimensional free carrier plasmas in AlGaAs/GaAs heterojunctions" Surf.Sci. 361/362. 368-371 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Ohno: "(Ga, Mn) As : A new diluted magnetic semiconductor based on GaAs" Applied Physics Letters. 69. 363-365 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Ohno: "Ferromagnetic order in (Ga, Mn) As/GaAs heterostructures" Proc.23rd.Int.Conf.Physics of Semiconductors. 405-408 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] A.Shen: "(Ga, Mn) As/GaAs diluted megnetic semiconductor superlattice structures prepared molecular beam epitaxy" Jpn.J.Appl.Phys. 36. L73-L75 (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] F.Matsukura: "Growth and properties of (Ga, Mn) As : a new III-V diluted magnetic semiconductor" Applied Surface Science. (accepted for publication). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] A.Shen: "Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures" Applied Surface Science. (accepted for publicaton). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] A.Shen: "Epitaxy of (Ga, Mn) As, a new diluted magnetic semiconductor based on GaAs" J.Crystal Growth. (accepted for publicatoin). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Adachi: "Ultrafast optical sampling spectroscopy of exciton dynamics in quantum wells" Prog.Crystal Growth and Charact.33. 3307-3310 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Soo: "III-V diluted magnetic semiconductor : Substitutional doping of Mn in InAs" Physical Review B. 53. 4905-4909 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Iye: "Magnetotransport in modulated magnetic fields" Physica B. 227. 122-126 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Oka: "Excitonic properties of nanostructure semimagnetic semiconductors" J.Luminescence. 70. 35-47 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.Hirakawa: "Coherent submillimeter-wave emission from non-equilibrium two-dimensional free carrier plasmas in AlGaAs/GaAs heterojunctions" Surf.Sci.361/362. 368-371 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Ohno: "Mn-Based III-V Diluted Magnetic (Semimagnetic)Semiconductors" Materials Science Forum. 182-184. 443-450 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Akeura,M.Tanaka,et al.: "Epitaxial ferromagnetic MnAs thin films grown by molecular beam epitaxy on si(001)substrates" Appl.Phys.Lett.67. 3349 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Y.Oka,et al.: "High-Field Magnetization of Snl-xEuxTe:EuTe" Solid State Commun.96. 11-15 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] H.Munekata: "Anomalous Hall effect in III-V-based magnetic semiconductor heterostructures" Mater.Sci,and Eng.B. 31. 151-156 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] S.Takeyama,et al.: "Excitoh magnetophotoluminescence affected by maghetic polarors and alloy fluctuations in Cd_<1-x> Mnx Te" Phys.Rev.B. B52. 1444-1447 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Hirakawa,et al.: "Far infrared emission spectroscopy of hot Two-dimensional plasmons in Al0.3Ga0.7AS/GsAs heterojanctions" Appl.Phys.Lett.67. 2326-2328 (1995)

    • Related Report
      1995 Annual Research Report

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Published: 1995-04-01   Modified: 2016-04-21  

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