| Project/Area Number |
07305049
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 総合 |
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| Research Field |
表面界面物性
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| Research Institution | Osaka University |
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Principal Investigator |
OURA Kenjiro Osaka University, Faculty of Engineering, Professor, 工学部, 教授 (60029288)
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| Co-Investigator(Kenkyū-buntansha) |
TAKAHAGI Takayuki Hiroshima University, Faculty of Engineering, Professor, 工学部, 教授 (40271069)
HONGO Shozo Kobe University, Faculty of Engineering, Assistant professor, 工学部, 助教授 (00029232)
UEDA Kazuyuki Toyota Technological Institute, Faculty of Engineering, Professor, 工学部, 教授 (60029212)
SAIKI Koichiro University of Tokyo, Graduate School of Science, Assistant professor, 大学院・理学研究科, 助教授 (70143394)
TSUKADA Masaru University of Tokyo, Graduate School of Science, Professor, 大学院・理学研究科, 教授 (90011650)
生地 文也 九州共立大学, 工学部, 教授 (00093419)
吉村 雅満 豊田工業大学, 工学部, 助教授 (40220743)
綿森 道夫 大阪大学, 工学部, 助手 (80222412)
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥4,800,000 (Direct Cost: ¥4,800,000)
Fiscal Year 1996: ¥4,800,000 (Direct Cost: ¥4,800,000)
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| Keywords | surface hydrogen / ecology of hydrogen / ion beam / scanning tunneling microscopy / epitaxy |
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| Research Abstract |
Since hydrogen is the most simple element, it is difficult to detect hydrogen atoms especially when they reside on solid surfaces. Under the present condition, using several limited methods, several properties of surface hydrogen such as absolute amounts, electronic states, atomic arrangements are independently investigated in a fragmentary manner, and the behavior of surface hydrogen is being discussed under inference. The purpose of this research project is to elucidate the ecology and dynamics at semiconductor surfaces by means of intensive studies on surface hydrogen conducted by researchers who have achievements on specialized experimental methods and theorists.
In this research project, with getting in close touch between researchers, we have studied the influence of surface hydrogen on the behaviors of metal atoms and substrate silicon atoms at atomic hydrogen adsorption on the metal-silicon shallow interface structures by means of structure analysis, evaluation of chemical state, and theoretical calculation. The result worthy of special mention was that we have investigated the structural changes of the In/Si (111) surface induced by atomic hydrogen exposure and found that the substrate Si atoms ware self-organized to peculiar structures induced by adsorption of hydrogen with being strongly dependent on the substrate reconstruction.
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