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Preparation and Characterization of Si-based Manmade Crystals

Research Project

Project/Area Number 07405001
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTokyo Institute of Technology

Principal Investigator

MATSUMURA Masakiyo  Tokyo Inst.Tech., Physical Electeonics, Professor, 工学部, 教授 (30110729)

Co-Investigator(Kenkyū-buntansha) UCHIDA Yasutaka  Teikyo Science Univ., Electronics & Computer science, Associate Plof., 理工学部, 助教授 (80134823)
SUGAHARA Satoshi  Tokyo Inst.Tech., Physical Electronics, aAssistant, 工学部, 助手 (40282842)
今井 茂  東京工業大学, 工学部, 助手 (40223309)
Project Period (FY) 1995 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥28,000,000 (Direct Cost: ¥28,000,000)
Fiscal Year 1997: ¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 1996: ¥13,000,000 (Direct Cost: ¥13,000,000)
Fiscal Year 1995: ¥12,200,000 (Direct Cost: ¥12,200,000)
KeywordsALE / Silicon / Germanium / Hetero Structure / Manmade Crystal / Hetero Interface / ゲルマニウム / 原子層エピロキシ- / ALE / 人工結晶 / 超格子
Research Abstract

Growth characteristics have been investigated in detail for atomic-layr epitaxy (ALE) of Si on the (111) surface by using SiH2Cl2 and atomic H.Gas-phase-generation of SiHCl radials by collision plays a very important role for an ideal one monolayr per cycle growth rate, and there are proper gas pressure and residence time for dense generation of SiHCl radials. For (100) surface, atomic H can etch the SiCl molecule chemisorbed on the surface, and this hydrogen pressure should be kept low. Based on these results, a wide ALE temperature window has been achieved for both (100) and (111) surfaces.
Ge-ALE has been achieved by using GeH2(CH3)2 and H for the (100) and (111) surfaces. The ALE temperature window for the (111) surface was as narrow as 20oC while it was as wide as 100oC for the (100) surface. Origin of this narrow window was attributed to the Modified Ealy-Redeal mechanism for the atomic H induced subtraction of methyl groups from the Ge-methyl dond.
Monolayr adsorption of Si has been achieved on the Ge surface by using SiH4 gas. Digital growth with an ideal one-monolayr step was achieved by successive Si-ALE on the Ge surfase adsorbed by Si. Interface abruptness has been evaluated by AES and SIMS and it was confirmed that the transition layr was as thin as 1nm , Since this value was the same to the transition layr thickness of atomically abrupt Si-SiO2 system , we have concluded that the Si/Ge hetero interface was atomically abrupt.
Mono-layr adsorption of Ge on Si(100) surface was achieved by 15 cycles exposure of GeCl4 and H.Digital deposition of Ge was achieved on this surface by using Ge-ALE.
Combining these four elemental techniques, we have fabricated Si7Ge3 manmade crystals and confirmed the layred structure of Si and Ge.

Report

(4 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • 1995 Annual Research Report
  • Research Products

    (41 results)

All Other

All Publications (41 results)

  • [Publications] 池田 圭司 他: "Formation of Atomically Abrupt Si/Ge Hetero-Interface" Jpn.J.Appl.Phys.3月号. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 蓮沼 英司 他: "Gase-Reaction-Controlled Atomic-Layer-Epitaxy of Silicon" J.Vacuum Science and Technolog y. Vo1.A.16,No.2. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 菅原 聡 他: "A Proposed Atomic-Layer-Deposition of Germanium on Si Surface" Jpn.J.Appl.Phys.Vo1.36,No.3. 1609-1613 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 菅原 聡 他: "Modeling of Germanium Atomic-layer-Epitaxy" Applied Surface.Science. Vo1.112. 176-186 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 森下 俊輔: "Atomic-Layer Chemical-Vapor-Deposition of Silicon-Nitride" Applied Surface Science. Vo1.112. 198-204 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 池田 圭司 他: "Atomic layer Etching of Germanium" Applied Surface Science. Vo1.112. 87-91 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 菅原 聡 他: "Ideal Monolayer Adsorption of Germanium on Si (100) Surface" Applied Surface Science. Vo1.107,No.11. 137-144 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 菅原 聡 他: "Modeling of Silicon Atomic-Layer-Epitaxy" Applied Surface Science. Vo1.107,No.11. 161-171 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 森下 俊輔 他: "AL-CVD of SiO2 by Cyclic Exposures of CH3OSi(NCO)3 and H202" Jpn J.Appl.Phys.Vo1.34,No.10. 5738-5742 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 今井 茂 他: "Atomic Layer Etching of Silicon by Thermal Desorption Method" Jpn.J.Appl.Phys.Vo1.34,No.9. 5049-5053 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 森下 俊輔 他: "New Substances for Atomic-Layer Deposition of Sillicon Dioxide" Journal of Non-Crystalline Solids. 187. 66-69 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 菅原 聡 他: "Atomic Hydrogen-Assisted ALE of Germanium" Applied Surface Science. 90. 349-356 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Ikeda, S.Sugahara, Y.Uchida, T.Nagai and M.Matsumura: "Formation of Atomically Abrupt Si/Ge Hetero-Interface" Jpn.J.Appl.Phys.March Issue. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] E.Hasumuma, S.Sugahara, S.Hoshino, S.Imai, K.Ikeda and M.Matsumura: "Gas-Phase-Reaction-Controlled Atomic-Layr-Epitaxy of Silicon" J.Vacuum Science and Technology. Vol.A16, No.2. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Sugahara, Y.Uchida, T.Kitamura, T.Nagai, M.Matsuyama, T.Hattori and M.Matsumura: "A Proposed Atomic-Layr-Deposition of Germanium on Si Surface" Jpn.J.Appl.Phys.Vol.36, No.3. 1609-1613 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Sugahara and M.Matsumura: "Modeling of Germanium Atomic-Layr-Epitaxy" Applied Surface.Science.Vol.112. 176-186 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Morishita, S.Sugahara and M.Matsumura: "Atomic-Layr Chemical-Vapor-Deposition of Silicon-Nitride" Applied Surface Science. Vol.112. 198-204 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Ikeda, S.Imai and M.Matsumura: "Atomic Layr Etching of Germanium" Applied Surface Science. Vol.112. 87-91 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Sugahara, T.Kitamura, S.Imai, Y.Uchida and M.Matsumura: "Ideal Monolayr Adsolption of Germanium on Si(100) Surface" Applied Surface Science. Vol.107, No.11. 137-144 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Sugahara, E.Hasunuma, S.Imai and M.Matsumura: "Modeling of Silicon Atomic-Layr-Epitaxy" Applied Surface Science. Vol.107, No.11. 161-171 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Morishita, Y.Uchida and M.Matsumura: "Atomic-Layr Chemical-Vapor-Deposition of SiO2 by Cyclic Exposures of CH3OSi(NCO)3 and H2O2" Jpn.J.Appl.Phys.Vol.34, No.10. 5738-5742 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Imai, T.Haga, O.Matsuzaki, T.Hattori and M.Matsumura: "Atomic Layr Etching of Silicon by Thermal Desorption Method" Jpn.J.Appl.Phys.Vol.34, No.9. 5049-5053 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Morishita, W.Gasser, K.Usami and M.Matsumura: "New Substances for Atomic-Layr Deposition of Silicon Dioxide" Journal of Non-Crystalline Solids. 187. 66-69 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Sugahara, M.Kadoshima, T.Kitamura, S.Imai and M.Matsumura: "Atomic Hydrogen-Assisted ALE of Germanium" Applied Surface Science. Vol.90. 349-356 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 池田、松村: "Formation of Atomically Abrupt Si/Ge Hetevo Interface" Jpn.J.Appl.Phys.3月号. (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] 松村: "Gas-Phase-Reaction-Controlled ALE of Sllicon" J.Vac,Sceience and Technology. (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] 池田 松村: "Atomic Layer Etchine of Ge" Applied Surface Science. 112. 87-91 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 森下、松村: "Atomic-Layer Chemical Vapoz Doposition of SiN" Applied Surface Science. 112. 198-204 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 菅原 松村: "Modeling of Ge Atomic Layer Epitacy" Applied Surface Science. 112. 176-186 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 菅原、松村: "A Proposed Atomic Layer Deposition of Ge on Si" Jpn J.Appl.Phys.36.3. 1609-1613 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Matsumura: "Modeling of Silicon Atomic-Layer-Epitaxy" Applied Sarface Science. 107. 161-171 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Matsumura: "Ideal Monolayer Adsorption of Germanuum on Si(100)Sarface" Applied Sarface Science. 107. 137-144 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Matsumura: "A Proposed Atomic-Layer-Deposition of Germanium on Si(100)" International Conference on SSDM. 58-60 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Matsumura: "Modeling of Germanium Atomic-Layer-Epitaxy" 4^<th> Int.Symp.on Atomic-Layer-Epitaxy. 14-15 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Matsumura: "Gas-Phase-Reaction-Controlled Atomic-Layer-Epitaxy of Silicon" 1996 Electronic Materials Conference. 58- (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 菅原 聡 他: "Atomic Hydrogen-Assisted ALE of Ge" Applied Surface Science. 90. 349-356 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 定行 英司 他: "Sub-Atomic Layer Growth of SiC at Low Temperatceres" Jpn. J. Appl. Physics. 34. 6166-6170 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 森下俊輔 他: "Atomic-Layer CVD of SiO_2" Jpn. J. Appl. Phys.34. 5738-5742 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 今井 茂 他: "Atomic Layer Etching of Silicon" Jpn. J. Appl. Phys.34. 5049-5053 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 菅原 聡 他: "Ideal Monolayer Adsorption of Ge on Si(100)" Applied Surface Science. (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] 菅原 聡 他: "Modeling of Si ALE" Applied Surface Science. (1996)

    • Related Report
      1995 Annual Research Report

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Published: 1995-04-01   Modified: 2016-04-21  

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