| Project/Area Number |
07454065
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
固体物性Ⅰ(光物性・半導体・誘電体)
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| Research Institution | Osaka University |
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Principal Investigator |
DAIMON Hiroshi Osaka University, Material Physics, Associate Professor, 基礎工学部, 助教授 (20126121)
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| Co-Investigator(Kenkyū-buntansha) |
SUGA Shigemasa Osaka University, Material Physics, Professor, 基礎工学部, 教授 (40107438)
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥7,900,000 (Direct Cost: ¥7,900,000)
Fiscal Year 1996: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 1995: ¥6,200,000 (Direct Cost: ¥6,200,000)
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| Keywords | circularly polarized light photoelectron diffraction / angle-resolved photoelectron spectroscopy / photoelectron diffraction / surface structure analysis / surface structure / two-dimensional analyzer / W(110) / W(110)-0 / W(110)1×1-0 |
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| Research Abstract |
The purpose of this study is to develop a new method of three-dimensional structure analysis using circularly polarized light photoelectron diffraction. The principle used here is to determine the direction and the distance between the scatterer and emitter of the photoelectron from the azimuthal rotational shift of the forward-focusing peaks in two-dimensional photoelectron diffraction pattern excited by left and right circularly-polarized light. The study of the photoemission process excited by a circularly-polarized light has just started, and little is understood now. We made several systematic investigation about the photoemission process excited by a circularly-polarized light on Si (001) surface. Following the experiment of circularly polarized light photoelectron diffraction on Si 2p core at kinetic energy of several hundred eV,the experiments of elliptically polarized light photoelectron diffraction on Si 2p core at kinetic energy of several hundred eV were performed. Next, the experiment of circularly polarized light photoelectron diffraction on Si 3s-3p valence band at a kinetic energy of 250 eV was performed to investigate the effect of the initial state. Then the photoelectron angular distribution from Si 3s-3p valence band at a kinetic energy of around 40 eV was measured and compared with highly accurate theoretical results. The studies on Si (001) includes a lot of multiple scattering effect. We studied more simplified system of O/W (110), where the multiple scattering effect can be neglected. The experiment was performed at Advanced Light Source, U.S.A.From all results we could establish a theoretical basis of the phenomena of circularly polarized light photoelectron diffraction, a new method of three-dimensional structure analysis was developed.
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